GT6J2H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances Unit: mm Enhancement mode type High speed : t f =.2 μs (typ.) (I C = 6A) Low saturation voltage: V CE (sat) = 2. V (typ.) (I C = 6A) FRD included between emitter and collector Fourth generation IGBT TO-P(LH) (Toshiba package name) Absolute Maximum Ratings (Ta = 2 C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 6 V Gate-emitter voltage V GES ±2 V Continuous collector @ Tc = C I current C @ 6 A Pulsed collector current I CP 2 A Diode forward current Collector power dissipation DC I F Pulsed I FP 2 @ Tc = C P C 6 @ 7 Junction temperature T j C Storage temperature range T stg to C A W JEDEC JEITA TOSHIBA 2-2F2C Weight: 9.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c).74 C/W Thermal resistance (diode) R th (j-c).6 C/W Equivalent Circuit Marking Gate Collector TOSHIBA 6J2H Part No. (or abbreviation code) Lot No. Emitter JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 26--
GT6J2H Electrical Characteristics (Ta = 2 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±2 V, V CE = ± na Collector cut-off current I CES V CE = 6 V, V GE =. ma Gate-emitter cut-off voltage V GE (OFF) I C = 6 ma, V CE = V. 6. V Collector-emitter saturation voltage V CE (sat) I C = 6 A, V GE = V 2. 2.9 V Input capacitance C ies V CE = V, V GE =, f = MHz 4 pf Switching time Rise time t r Resistive Load.26 Turn-on time t on V CC = V, I C = 6 A.9 Fall time t f V GG = ± V, R G = Ω.2.2 μs Turn-off time t off (Note ).4 Diode forward voltage V F I F = A, V GE =.4 2. V Reverse recovery time t rr I F = A, di/dt = A/μs..2 µs Note : Switching time measurement circuit and input/output waveforms R G R L V GE 9% % V CC I C 9% 9% V CE t d (off) % % t f t r t off t on 2 26--
GT6J2H 2 I C V CE Tc=-4 Tc=-4 2 9 2 Tc=2 Tc=2 I C V CE 2 9 6 4 2. 7. V GE=7V 2 4 6 4 2. 7. V GE=7V 2 4 2 Tc=2 Tc=2 I C V CE 2 9. 2 V CE =V V CE=V I C V GE 6 4 2 7. 7 6. V GE=6V 6 4 2 Tc=2 2-4 2 4 2 4 6 2 Gate-emitter voltage VGE (V) Collector-emitter saturation voltage VCE (sat) (V) V CE (sat) Tc. I C=2A 2. 2. 6. V GE =V エミッタ接地 V GE=V -6-2 2 6 4 Case temperature Tc ( C) 26--
GT6J2H 4 2 RL = Ω VCE = V V CE, V GE Q G 2 2 Gate-emitter voltage VGE (V) Capacitance C (pf) VGE = f = MHz C V CE Cies Coes Cres 6 24 2. Gate charge Q G (nc) Collector-emitter voltage V CE (V) Switching time (μs).. V CC V= CC=V V R G = I C=6A Ω V GG V GG=±V = V Tc=2 Switching Time R G toff Gate resistance R G (Ω) IC max (pulsed) * ms* IC max (continuous) DC operation Safe Operating Area ms* tr tf ton *: Single non-repetitive pulse Curves must be derated linearly with increases in temperature. μs* μs* Switching time (μs) Switching Time I C V CC V= CC=V V R G = R G=Ω Ω V V GG GG=±V = V Tc=2 toff.. ton 2 4 6 7 Collector current I C (A) Tj 2 C VGG = 2 V RG = Ω Reverse Bias SOA tf tr Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) 4 26--
GT6J2H Maximum DC collector current IC max (A) I C max Tc 7 エミッタ接地 6 V GE =V VGE = V 4 2 2 7 2 Transient thermal impedance rth (t) ( C/W) 2 2 r th (t) t w Diode stage IGBT stage 4 2 2 Case temperature Tc ( C) Pulse width t w (s) Forward current IF (A) 6 4 2 VGE = I F V F Tc = 2 C 2 4.4..2.6 2. Peak reverse recovery current Irr (A) trr I rr, t rr I F Irr di/dt = A/μs VGE = 2 2 Reverse recovery time trr (ns) Forward voltage V F (V) Forward current I F (A) Junction capacitance Cj (pf) f = MHz C j V R Reverse recovery time trr (ns) 2 Peak reverse recovery current Irr (A) 6 4 2 trr Irr I rr, t rr di/dt IF = A 4 2 6 2 Reverse voltage V R (V) di/dt (A/μs) 26--
GT6J2H RESTRICTIONS ON PRODUCT USE 277-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 26--