FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: V CE(sat) =.6 V(Typ.) @ I C = 5 A % of the Parts Tested for I LM () High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant General Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4 th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses are essential. Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT E C G C COLLECTOR (FLANGE) G E Absolute Maximum Ratings Symbol Description FGH5T65SQD-F55 Unit V CES Collector to Emitter Voltage 65 V V GES Transient Gate to Emitter Voltage ± 3 V Gate to Emitter Voltage ± 2 V I C Collector Current @ A Collector Current @ T C = o C 5 A I LM () Pulsed Collector Current @ 2 A I CM (2) Pulsed Collector Current 2 A I F Diode Forward Current @ 5 A Diode Forward Current @ T C = o C 3 A I FM Pulsed Diode Maximum Forward Current 2 A P D Maximum Power Dissipation @ 268 W Maximum Power Dissipation @ T C = o C 34 W T J Operating Junction Temperature -55 to +75 T stg Storage Temperature Range -55 to +75 o C o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Notes:.V CC = 4 V, V GE = 5 V, I C = 2 A, R G = 3 Ω, Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature 26 Semiconductor Components Industries, LLC. September-27, Rev. 2 Publication Order Number: FGH5T65SQD/D
Thermal Characteristics Symbol Parameter FGH5T65SQD-F55 Unit R θjc (IGBT) Thermal Resistance, Junction to Case, Max..56 R θjc (Diode) Thermal Resistance, Junction to Case, Max..25 R θja Thermal Resistance, Junction to Ambient, Max. 4 o C/W Package Marking and Ordering Information Part Number Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted o C/W o C/W Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGH5T65SQD-F55 FGH5T65SQD TO-247 G3 Tube - - 3 Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = ma 65 - - V BV CES / T J Temperature Coefficient of Breakdown Voltage I C = ma, Reference to 25 o C -.6 - V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V - - 25 µa I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT On Characteristics V GE(th) G-E Threshold Voltage I C = 5 ma, V CE = V GE 2.6 4.5 6.4 V I C = 5 A, V GE = 5 V, -.6 2. V V CE(sat) Collector to Emitter Saturation Voltage I C = 5 A, V GE = 5 V, -.92 - V Dynamic Characteristics C ies Input Capacitance - 3275 - pf C oes Output Capacitance V CE = 3 V, V GE = V, f = MHz - 84 - pf C res Reverse Transfer Capacitance - 2 - pf Switching Characteristics t d(on) Turn-On Delay Time - 22 - ns t r Rise Time - 8.7 - ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 2.5 A, - 5 - ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, - 2.5 - ns E on Turn-On Switching Loss Inductive Load, - 8 - uj E off Turn-Off Switching Loss - 45 - uj E ts Total Switching Loss - 225 - uj t d(on) Turn-On Delay Time - 9 - ns t r Rise Time - 3 - ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 25 A, - 93 - ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, - 6.4 - ns E on Turn-On Switching Loss Inductive Load, - 4 - uj E off Turn-Off Switching Loss - 88 - uj E ts Total Switching Loss - 498 - uj 2
Electrical Characteristics of the IGBT (Continued) Symbol Parameter Test Conditions Min. Typ. Max Unit t d(on) Turn-On Delay Time - 2 - ns t r Rise Time - 9.8 - ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 2.5 A, - 6 - ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, - 3.5 - ns E on Turn-On Switching Loss Inductive Load, - 42 - uj E off Turn-Off Switching Loss - - uj E ts Total Switching Loss - 52 - uj t d(on) Turn-On Delay Time - 8 - ns t r Rise Time - 5 - ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 25 A, - 2 - ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, - 8 - ns E on Turn-On Switching Loss Inductive Load, - 64 - uj E off Turn-Off Switching Loss - 23 - uj E ts Total Switching Loss - 844 - uj Q g Total Gate Charge - 99 - nc Q ge Gate to Emitter Charge V CE = 4 V, I C = 5 A, V GE = 5 V - 7 - nc Q gc Gate to Collector Charge - 23 - nc FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Electrical Characteristics of the Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Unit V FM Diode Forward Voltage I F = 3 A E rec t rr Q rr Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge I F =3 A, di F /dt = 2 A/µs - 2.2 2.6 -.9 - - 4 - uj - 3 - - 27 - - 48 - - 82 - V ns nc 3
Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] 2 5 5 2V 5V 2V V V GE = 8V 2 3 4 5 Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] 2 5 5 V GE = 5V Figure 2. Typical Output Characteristics Collector Current, IC [A] 2 5 5 2V 5V 2V V V GE = 8V 2 3 4 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 3 2 V GE = 5V A 5A I C = 25A FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT 2 3 4 5 - -5 5 5 2 Collector-Emitter Case Temperature, T C [ o C] Figure 5. Saturation Voltage vs. V GE Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] 2 6 2 8 4 I C = 25A 5A A 4 8 2 6 2 Gate-Emitter Voltage, V GE [V] Collector-Emitter Voltage, VCE [V] 2 6 2 8 4 I C = 25A 5A A 4 8 2 6 2 Gate-Emitter Voltage, V GE [V] 4
Typical Performance Characteristics Figure 7. Capacitance Characteristics Capacitance [pf] V GE = V, f = MHz C ies C oes C res Figure 9. Turn-on Characteristics vs. Gate Resistance t r Figure 8. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] 5 2 9 6 3 V CC = 2V 3V 4V 3 2 4 6 8 Gate Charge, Q g [nc] Figure. Turn-off Characteristics vs. Gate Resistance FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT t d(off) Switching Time [ns] t d(on) V CC = 4V, V GE = 5V I C = 5A 5 2 3 4 5 Gate Resistance, R G [Ω] Switching Time [ns] V CC = 4V, V GE = 5V I C = 5A 2 3 4 5 Gate Resistance, R G [Ω] t f Figure. Switching Loss vs. Gate Resistance Switching Loss [uj] 5 E on E off V CC = 4V, V GE = 5V I C = 5A 2 3 4 5 Gate Resistance, R G [Ω] Switching Time [ns] Figure 2. Turn-on Characteristics vs. Collector Current 2 V GE = 5V, R G = 4.7Ω 25 5 75 25 5 t r t d(on) Collector Current, I C [A] 5
Typical Performance Characteristics Figure 3. Turn-off Characteristics vs. Collector Current Switching Time [ns] 5 t d(off) V GE = 5V, R G = 4.7Ω 25 5 75 25 5 Collector Current, I C [A] Figure 5. Load Current Vs. Frequency Collector Current, [A] 25 2 5 5 T C = o C Square Wave T J <= 75 o C, D =.5, V CE = 4V k k k M Switching Frequency, f[hz] t f V GE = 5/V, R G = 4.7Ω T C = 75 o C Switching Loss [uj] Collector Current, Ic [A] Figure 4. Switching Loss vs. Collector Current E on E off V GE = 5V, R G = 4.7Ω 5 25 5 75 25 5 Collector Current, I C [A] Figure 6. SOA Characteristics 3 DC *Notes:. ms µs ms µs 2. T J = 75 o C 3. Single Pulse. FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Figure 7. Forward Characteristics Forward Current, IF [A] 5 T = 75 o C C T C = 75 o C T C = 75 o C 2 3 4 5 Forward Voltage, V F [V] Reverse Recovery Currnet, Irr [A] Figure 8. Reverse Recovery Current 8 6 4 2 di/dt = 2A/µs di/dt = A/µs di/dt = 2A/µs di/dt = A/µs --- 2 4 6 8 Forward Current, I F [A] 6
Typical Performance Characteristics Figure 9. Reverse Recovery Time Reverse Recovery Time, trr [ns] 35 28 2 4 7 --- di/dt = 2A/µs di/dt = A/µs 2 4 6 8 Forward Current, I F [A].6 Stored Recovery Charge, Qrr [nc] Figure 2. Stored Charge 2 9 6 3 --- di/dt = A/µs 2 4 6 8 Forward Current, I F [A] Figure 2.Transient Thermal Impedance of IGBT di/dt = 2A/µs FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Thermal Response [Zthjc]..5.2..5.2. Duty Factor, D = t/t2 single pulse Peak T j = Pdm x Zthjc + T C. -5-4 -3-2 - Rectangular Pulse Duration [sec] P DM t t 2 Figure 22.Transient Thermal Impedance of Diode 2 Thermal Response [Zthjc]..5.2..5.2. single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C. -5-4 -3-2 - Rectangular Pulse Duration [sec] P DM t t 2 7
Mechanical Dimensions FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 8
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