VS-5WQ4FNPbF Schottky Rectifier, 5.5 D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 5.5 V R 4 V V F at I F See Electrical table I RM 4 m at 25 T J max. 5 Diode variation Single die E S 9 mj FETURES Popular D-PK outline Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability ompliant to RoHS Directive 22/95/E Meets MSL level, per J-STD-2, LF maximum peak of 26 DESRIPTION The VS-5WQ4FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on P board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS I F(V) Rectangular waveform 5.5 V RRM 4 V I FSM t p = 5 μs sine 34 V F 5 pk, T J = 25.44 V T J Range - 4 to 5 VOLTGE RTINGS PRMETER SYMBOL VS-5WQ4FNPbF UNITS Maximum D reverse voltage V R Maximum working peak reverse voltage V RWM 4 V BSOLUTE MXIMUM RTINGS load PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current See fig. 5 I F(V) 5 % duty cycle at T = 35, rectangular waveform 5.5 Maximum peak one cycle 5 μs sine or 3 μs rect. pulse Following any rated 55 non-repetitive surge current I FSM condition and with rated See fig. 7 ms sine or 6 ms rect. pulse V RRM applied 9 Non-repetitive avalanche energy E S, I S =.5, L = 8 mh 9 mj urrent decaying linearly to zero in μs Repetitive avalanche current I R Frequency limited by T J maximum V =.5 x V R typical.2 Document Number: 94233 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 4-Jan- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
VS-5WQ4FNPbF Schottky Rectifier, 5.5 ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS 5.5 Maximum forward voltage drop.63 V () FM See fig. 5.44 T J = 25.59 V Maximum reverse leakage current 3 I () RM V R = Rated V R See fig. 2 T J = 25 4 m Thereshold voltage V F(TO).27 V T J =T J maximum Forward slope resistance r t 26.77 m Typical junction capacitance T V R = 5 V D (test signal range khz to MHz), 25 45 pf Typical series inductance L S Measured lead to lead 5 mm from package body 5. nh Note () Pulse width < 3 μs, duty cycle < 2 % THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T () J, T Stg - 4 to 5 Maximum thermal resistance, junction to case R thj D operation See fig. 4 Note dp () tot ------------ < ------------- thermal runaway condition for a diode on its own heatsink dt J R thj 3. /W pproximate weight.3 g. oz. Marking device ase style D-PK (similar to TO-252) 5WQ4FN www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94233 2 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 4-Jan-
Schottky Rectifier, 5.5 VS-5WQ4FNPbF I F - Instantaneous Forward urrent () T J = 5 T J = 25.2.4.6.8..2.4.6.8 2. 2.2 V FM - Forward Voltage Drop (V) Fig. - Maximum Forward Voltage Drop haracteristics Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage I R - Reverse urrent (m)... T J = 5 T J = 25 T J = T J = 75 T J = 5 5 5 2 25 3 35 4 V R - Reverse Voltage (V) T - Junction apacitance (pf) 5 5 2 25 3 35 4 45 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W). Single pulse (thermal resistance) D =.75 D =.5 D =.33 D =.25 D =.2...... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics P DM Notes:. Duty factor D = t /t 2 2. Peak T J = P DM x Z thj + T t t 2 Document Number: 94233 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 4-Jan- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 3
VS-5WQ4FNPbF Schottky Rectifier, 5.5 llowable ase Temperature ( ) 55 5 45 4 35 3 25 2 Square wave (D =.5) 8 % rated V R applied See note () D 2 3 4 5 6 7 8 verage Power Loss (W) 4. 3.5 3. 2.5 2..5..5 D =.2 D =.25 D =.33 D =.5 D =.75 D RMS limit 2 3 4 5 6 7 8 I F(V) - verage Forward urrent () I F(V) - verage Forward urrent () Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 6 - Forward Power Loss haracteristics I FSM - Non-Repetitive Surge urrent () t any rated load condition and with rated V RRM applied following surge t p - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge urrent Note () Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 8 % rated V R www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94233 4 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 4-Jan-
Schottky Rectifier, 5.5 VS-5WQ4FNPbF ORDERING INFORMTION TBLE Device code VS- 5 W Q 4 FN TRL PbF 2 3 4 5 6 7 8 - product 2 - urrent rating (5.5 ) 3 - Package identifier: W = D-PK 4 - Schottky Q series 5 - Voltage rating (4 = 4 V) 6 - FN = TO-252 (D-PK) 7 - None = Tube (5 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - PbF = Lead (Pb)-free Dimensions Part marking information Packaging information LINKS TO RELTED DOUMENTS www.vishay.com/doc?956 www.vishay.com/doc?9559 www.vishay.com/doc?9533 Document Number: 94233 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 4-Jan- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 5
www.vishay.com DIMENSIONS in millimeters and inches D-PK (TO-252) Outline Dimensions E (5) Pad layout Ø 2 b3 (3). M B L3 (3) 4 Ø B D (5) 2 3 L4 c2 Seating plane H D 4 E 3 2.488 (2.4).49 (.4).265 (6.74).245 (6.23) (2) L5 b2 2 x e b. M B Lead tip Detail Detail Rotated 9 W Scale: 2: Gauge plane L2 Ø c (L) L H (7) Seating plane.6 (.524).93 (2.38).85 (2.8).89 (2.28) SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MX. MX. MX. MX. NOTES 2.8 2.39.86.94 e 2.29 BS.9 BS -.3 -.5 H 9.4.4.37.4 b.64.89.25.35 L.4.78.55.7 b2.76.4.3.45 L 2.74 BS.8 REF. b3 4.95 5.46.95.25 3 L2.5 BS.2 BS c.46.6.8.24 L3.89.27.35.5 3 c2.46.89.8.35 L4 -.2 -.4 D 5.97 6.22.235.245 5 L5.4.52.45.6 2 D 5.2 -.25-3 Ø E 6.35 6.73.25.265 5 Ø 5 5 E 4.32 -.7-3 Ø2 25 35 25 35 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension uncontrolled in L5 (3) Dimension D, E, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section - dimension apply to the flat section of the lead between.3 and.25 mm (.5 and.") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b and c applied to base metal only (7) Datum and B to be determined at datum plane H (8) Outline conforms to JEDE outline TO-252 Revision: 5-Dec-2 Document Number: 956 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
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