SLLIMM -nano (small low-loss intelligent molded module) IPM, 3 A V 3-phase IGBT inverter bridge. Description. Table 1.

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SLLIMM -nano (small low-loss intelligent molded module) IPM, 3 A - 600 V 3-phase IGBT inverter bridge Applications Datasheet - production data 3-phase inverters for motor drives Dish washers, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps Description Features NDIP-26L IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes Optimized for low electromagnetic interference V CE(sat) negative temperature coefficient 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis an d pull-down resistor Undervoltage lockout Internal bootstrap diode Interlocking function Optimized pinout for easy board layout This intelligent power module implements a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six IGBTs with freewheeling diodes and three halfbridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is optimized for thermal performance and compactness in built-in motor applications, or other low power applications where assembly space is limited. SLLIMM is a trademark of STMicroelectronics. Table 1. Device summary Order code Marking Package Packaging STGIPN3H60A GIPN3H60A NDIP-26L Tube March 2014 DocID018958 Rev 4 1/17 This is information on a product in full production. www.st.com

Contents STGIPN3H60A Contents 1 Internal schematic diagram and pin configuration................ 3 2 Electrical ratings............................................ 6 2.1 Absolute maximum ratings..................................... 6 2.2 Thermal data............................................... 7 3 Electrical characteristics..................................... 8 3.1 Control part................................................. 9 4 Application information..................................... 11 4.1 Recommendations.......................................... 12 5 Package mechanical data.................................... 13 6 Revision history........................................... 16 2/17 DocID018958 Rev 4

Internal schematic diagram and pin configuration 1 Internal schematic diagram and pin configuration Figure 1. Internal schematic diagram Pin 1 Pin 26 N W GND GND HVG NC VCC HIN OUT LVG W, OUT W Vcc W LIN VBOOT HIN W LIN W Vboot W NC NC GND HVG N V NC Vcc V VCC HIN LIN OUT LVG VBOOT V, OUT V HIN V LIN V Vboot V NC Vcc U N U HIN U NC GND VCC HIN HVG OUT LVG U,OUT U LIN U LIN VBOOT P Pin 16 AM09917v1 Vboot U Pin 17 DocID018958 Rev 4 3/17 17

Internal schematic diagram and pin configuration STGIPN3H60A Table 2. Pin description Pin Symbol Description 1 GND Ground 2 NC Not connected 3 V CC W Low voltage power supply W phase 4 HIN W High side logic input for W phase 5 LIN W Low side logic input for W phase 6 NC Not connected 7 NC Not connected 8 NC Not connected 9 V CC V Low voltage power supply V phase 10 HIN V High side logic input for V phase 11 LIN V Low side logic input for V phase 12 NC Not connected 13 V CC U Low voltage power supply for U phase 14 HIN U High side logic input for U phase 15 NC Not connected 16 LIN U Low side logic input for U phase 17 V boot U Bootstrap voltage for U phase 18 P Positive DC input 19 U U phase output 20 N U Negative DC input for U phase 21 V boot V Bootstrap voltage for V phase 22 V V phase output 23 N V Negative DC input for V phase 24 V boot W Bootstrap voltage for W phase 25 W W phase output 26 N W Negative DC input for W phase 4/17 DocID018958 Rev 4

Internal schematic diagram and pin configuration Figure 2. Pin layout (top view) (*) Dummy pin internally connected to P (positive DC input). DocID018958 Rev 4 5/17 17

Electrical ratings STGIPN3H60A 2 Electrical ratings 2.1 Absolute maximum ratings Table 3. Inverter part Symbol Parameter Value Unit V CES Each IGBT collector emitter voltage (V IN (1) = 0) ± I C (2) ± I CP (3) Each IGBT continuous collector current at T C = 25 C 1. Applied between HIN i, LIN i and G ND for i = U, V, W. 2. Calculated according to the iterative formula: 600 V 3 A Each IGBT pulsed collector current 18 A P TOT Each IGBT total dissipation at T C = 25 C 8 W I C ( T C ) 3. Pulse width limited by max junction temperature. T jmax ( ) T C R thj c V CE( sat) ( max) T jmax = ------------------------------------------------------------------------------------------------------- ( ( ), I C ( T C )) Table 4. Control part Symbol Parameter Min. Max. Unit V OUT Output voltage applied between OUT U, OUT V, OUT W - GND V boot -18 V boot + 0.3 V V CC Low voltage power supply - 0.3 18 V V boot Bootstrap voltage - 0.3 618 V V IN Logic input voltage applied between HIN i, LIN i and G ND for i = U, V, W - 0.3 V CC + 0.3 V ΔV OUT/dT Allowed output slew rate 50 V/ns Table 5. Total system Symbol Parameter Value Unit V ISO Isolation withstand voltage applied between each pin and heatsink plate (AC voltage, t = 60 sec.) 1000 V T J Power chips operating junction temperature -40 to 150 C T C Module case operating temperature -40 to 125 C 6/17 DocID018958 Rev 4

Electrical ratings 2.2 Thermal data Table 6. Thermal data Symbol Parameter Value Unit R thja Thermal resistance junction-ambient 50 C/W DocID018958 Rev 4 7/17 17

Electrical characteristics STGIPN3H60A 3 Electrical characteristics T j = 25 C unless otherwise specified. Table 7. Inverter part Symbol Parameter Test conditions Min. Typ. Max. Unit V CE(sat) Collector-emitter saturation voltage V CC = V boot = 15 V, V IN (1) = 0-5 V, I C = 1 A V CC = V boot = 15 V, V IN (1) = 0-5 V, I C = 1 A, T J = 125 C - 2.15 2.6-1.65 I CES Collector-cut off current (V (1) IN = 0 logic state ) V CE = 550 V, V CC = V Boot = 15 V - 250 µa V F Diode forward voltage V (1) IN = 0 logic state, I C = 1 A - 1.7 V Inductive load switching time and energy V t on Turn-on time - 275 t c(on) Crossover time (on) - 90 V DD = 300 V, t off Turn-off time V CC = V boot = 15 V, - 890 t (1) c(off) Crossover time (off) V IN = 0-5 V, - 125 t I C = 1 A rr Reverse recovery time - 50 (see Figure 4) E on Turn-on switching losses - 18 E off Turn-off switching losses - 13 1. Applied between HIN i, LIN i and G ND for i = U, V, W (LIN inputs are active-low). ns µj Note: t ON and t OFF include the propagation delay time of the internal drive. t C(ON) and t C(OFF) are the switching time of IGBT itself under the internally given gate driving condition. INPUT Figure 3. Switching time test circuit Lin BOOT VBOOT>VCC BUS HVG VCC Hin Vcc OUT L IC LVG VCE GND 0 1 8/17 DocID018958 Rev 4

Electrical characteristics 100% IC 100% IC Figure 4. Switching time definition t rr VCE IC IC VCE VIN VIN t ON t C(ON) t OFF t C(OFF) VIN(ON) 10% IC 90% IC 10% VCE VIN(OFF) 10% VCE 10% IC (a) turn-on (b) turn-off AM09223V1 3.1 Control part Table 8. Low voltage power supply (V CC = 15 V unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit V CCthON Undervoltage turn-on threshold 9.1 9.6 10.1 V V CCthOFF Undervoltage turn-off threshold 7.9 8.3 8.8 V V CChys Undervoltage hystereses 0.9 V I qccu Undervoltage quiescent supply current V CC < 7.9 V 250 330 µa I qcc Quiescent current V CC = 15 V 350 450 µa DocID018958 Rev 4 9/17 17

Electrical characteristics STGIPN3H60A Table 9. Bootstrapped voltage (V CC = 15 V unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit V boot_thon Undervoltage turn-on threshold 8.5 9.5 10.5 V V boot_thoff Undervoltage turn-off threshold 7.2 8.3 9.2 V V boothys Undervoltage hystereses 0.9 V I qboot Quiescent current 250 µa R DS(on) Bootstrap driver on-resistance V CC > 12.5 V 125 Ω Table 10. Logic inputs (V CC = 15 V unless otherwise specified) (1) Symbol Parameter Test conditions Min. Typ. Max. Unit V il Low level logic input voltage 1.1 V V ih High level logic input voltage 1.8 V I il Low level logic input current V (2) IN = 0-1 µa I ih High level logic input current V (1) IN = 15 V 20 70 µa Dt Dead time 320 ns 1. See Figure 5: Dead time and interlocking definition. 2. Applied between HIN i, LIN i and G ND for i = U, V, W Figure 5. Dead time and interlocking definition LIN HIN LVG DT DT DT Interlocking function HVG AM03794v1 10/17 DocID018958 Rev 4

Application information 4 Application information Figure 6. Typical application circuit DocID018958 Rev 4 11/17 17

Application information STGIPN3H60A 4.1 Recommendations Input signals HIN, LIN are active-high logic. A 500 kω (typ.) pull-down resistor is built-in for each high side input. If an external RC filter is used for noise immunity, attention should be given to the variation of the input signal level. To prevent input signal oscillation, the wiring of each input should be as short as possible. By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible. Each capacitor should be located as close as possible to the pins of the IPM. Low inductance shunt resistors should be used for phase leg current sensing. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible. Additional high frequency ceramic capacitors mounted close to the module pins will further improve performance. Table 11. Recommended operating conditions Symbol Parameter Test conditions Min. Typ. Max. Unit V PN Supply voltage Applied between P-Nu, Nv, Nw 300 500 V V CC Control supply voltage Applied between V CC - GND 12 15 17 V V BS High side bias voltage Applied between V BOOTi - OUT i for i = U, V, W 11.5 17 V t dead Blanking time to prevent Arm-short For each input signal 1.5 µs f PWM PWM input signal -40 C < T c < 100 C -40 C < T j < 125 C 25 khz T C Case operation temperature 100 C Note: For further details refer to AN4043. 12/17 DocID018958 Rev 4

Package mechanical data 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 7. NDIP-26L drawing b,b2 b1,b3 D3 0.075 WITH PLATING A2 A BASE METAL c1 c PIN 1 A1 A3 A4 SECTION F-F&G-G D1 b e F F PIN 16 D 0.075 PIN 26 PIN 17 L PIN#1 ID eb1 eb2 E PIN 1 PIN 16 D2 b2 e1 PIN 26 PIN 17 G G 8278949B DocID018958 Rev 4 13/17 17

Package mechanical data STGIPN3H60A Table 12.NDIP-26L mechanical data Dim. mm. Min. Typ. Max. A 4.40 A1 0.80 1.00 1.20 A2 3.00 3.10 3.20 A3 1.70 1.80 1.90 A4 5.70 5.90 6.10 b 0.53 0.72 b1 0.52 0.60 0.68 b2 0.83 1.02 b3 0.82 0.90 0.98 c 0.46 0.59 c1 0.45 0.50 0.55 D 29.05 29.15 29.25 D1 0.50 0.77 1.00 D2 0.35 0.53 0.70 D3 29.55 E 12.35 12.45 12.55 e 1.70 1.80 1.90 e1 2.40 2.50 2.60 eb1 16.10 16.40 16.70 eb2 21.18 21.48 21.78 L 1.24 1.39 1.54 14/17 DocID018958 Rev 4

Package mechanical data Figure 8. NDIP-26L tube dimensions (dimensions are in mm.) ANTISTATIC S 03 PVC AM10474v1 8313150_A Note: Base quantity 17 pcs, bulk quantity 476 pcs. DocID018958 Rev 4 15/17 17

Revision history STGIPN3H60A 6 Revision history Table 13. Document revision history Date Revision Changes 23-Jun-2011 1 Initial release. 09-Jan-2012 2 03-Jul-2012 3 14-Mar-2014 4 Document status promoted from preliminary data to datasheet. Added Figure 8 on page 15. Modified: Min. and Max. value Table 4 on page 6. Added: Table 11 on page 12. Updated Figure 3: Switching time test circuit. Updated Section 5: Package mechanical data. 16/17 DocID018958 Rev 4

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