MOSFET OptiMOS TM PowerTransistor,6V Features 1%avalanchetested Superiorthermalresistance Nchannel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61249221 1 2 3 4 5 6 7 8 HSOF Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 6 V RDS(on),max 1.2 mω ID 24 A Qoss 119 nc QG(V..1V) 16 nc Gate Pin 1 Drain Tab Source Pin 28 Type/OrderingCode Package Marking RelatedLinks PGHSOF8 12N6N 1) JSTD2 and JESD22 1
OptiMOS TM PowerTransistor,6V TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Package Outlines....................................................................... 1 Revision History........................................................................ 11 Trademarks........................................................................... 11 Disclaimer............................................................................ 11 2
OptiMOS TM PowerTransistor,6V 1Maximumratings atta=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 96 A TC=25 C 24 221 41 A VGS=1V,TC=25 C VGS=1V,TC=1 C VGS=1V,TC=25 C,RthJA=4K/W 1) Avalanche energy, single pulse 3) EAS 42 mj ID=1A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 214 W TC=25 C Operating and storage temperature Tj,Tstg 55 175 C IEC climatic category; DIN IEC 681: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case RthJC.4.7 K/W Device on PCB, minimal footprint RthJA 62 K/W Device on PCB, 6 cm² cooling area 1) RthJA 4 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 3
OptiMOS TM PowerTransistor,6V 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=143µA Zero gate voltage drain current IDSS.5 1 1 1 µa VDS=6V,VGS=V,Tj=25 C VDS=6V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance 1) RG 1.6 2.4 Ω 1. 1.4 1.2 2. mω VGS=1V,ID=1A VGS=6V,ID=5A Transconductance gfs 12 24 S VDS >2 ID RDS(on)max,ID=1A Table5Dynamiccharacteristics 1) Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 78 975 pf VGS=V,VDS=3V,f=1MHz Output capacitance Coss 18 225 pf VGS=V,VDS=3V,f=1MHz Reverse transfer capacitance Crss 69 138 pf VGS=V,VDS=3V,f=1MHz Turnon delay time td(on) 16 ns Rise time tr 27 ns Turnoff delay time td(off) 48 ns Fall time tf 23 ns VDD=3V,VGS=1V,ID=1A, RG,ext=1.8Ω VDD=3V,VGS=1V,ID=1A, RG,ext=1.8Ω VDD=3V,VGS=1V,ID=1A, RG,ext=1.8Ω VDD=3V,VGS=1V,ID=1A, RG,ext=1.8Ω Table6Gatechargecharacteristics 2) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 35 nc VDD=3V,ID=1A,VGS=to1V Gate charge at threshold Qg(th) 22 nc VDD=3V,ID=1A,VGS=to1V Gate to drain charge 1) Qgd 19 25 nc VDD=3V,ID=1A,VGS=to1V Switching charge Qsw 32 nc VDD=3V,ID=1A,VGS=to1V Gate charge total 1) Qg 16 124 nc VDD=3V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 4.5 V VDD=3V,ID=1A,VGS=to1V Gate charge total, sync. FET Qg(sync) 94 nc VDS=.1V,VGS=to1V Output charge 1) Qoss 119 149 nc VDD=3V,VGS=V 1) Defined by design. Not subject to production test 2) See Gate charge waveforms for parameter definition 4
OptiMOS TM PowerTransistor,6V Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS 179 A TC=25 C Diode pulse current IS,pulse 716 A TC=25 C Diode forward voltage VSD.9 1.2 V VGS=V,IF=1A,Tj=25 C Reverse recovery time 1) trr 9 18 ns VR=3V,IF=1A,diF/dt=1A/µs Reverse recovery charge 1) Qrr 237 474 nc VR=3V,IF=1A,diF/dt=1A/µs 1) Defined by design. Not subject to production test 5
OptiMOS TM PowerTransistor,6V 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 25 Diagram2:Draincurrent 25 2 2 15 15 Ptot[W] 1 1 5 5 25 5 75 1 125 15 175 TC[ C] Ptot=f(TC) 25 5 75 1 125 15 175 2 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 4 Diagram4:Max.transientthermalimpedance 1 1 3 1 µs.5 1 µs.2 1 2 1 1 1 µs 1 ms ZthJC[K/W] 1 1.1.5.2.1 1 1 ms DC 1 2 single pulse 1 1 1 1 1 1 1 1 2 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 3 1 6 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 6
OptiMOS TM PowerTransistor,6V Diagram5:Typ.outputcharacteristics 12 Diagram6:Typ.drainsourceonresistance 3. 1 1 V 7 V 2.5 5 V 5.5 V 8 2. 6 V 6 4 6 V 5.5 V RDS(on)[mΩ] 1.5 1. 7 V 1 V 2 5 V.5..5 1. 1.5 2. 2.5 3. VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS. 2 4 6 8 1 12 RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 12 Diagram8:Typ.forwardtransconductance 35 1 3 8 25 2 6 gfs[s] 15 4 1 2 175 C 25 C 2 4 6 8 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 5 5 1 15 2 gfs=f(id);tj=25 C 7
OptiMOS TM PowerTransistor,6V Diagram9:Drainsourceonstateresistance 2.4 Diagram1:Typ.gatethresholdvoltage 4 2. 3 143 µa 1.6 max 143 µa RDS(on)[mΩ] 1.2 typ VGS(th)[V] 2.8 1.4. 6 2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=1A;VGS=1V 6 2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances 1 5 Diagram12:Forwardcharacteristicsofreversediode 1 4 25 C 175 C 25 C, 98% 175 C, 98% 1 4 1 3 Ciss C[pF] 1 3 Coss IF[A] 1 2 1 2 1 1 Crss 1 1 2 4 6 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 8
OptiMOS TM PowerTransistor,6V Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge 1 9 8 3 V 1 2 125 C 1 C 25 C 7 6 12 V 48 V IAV[A] VGS[V] 5 4 1 1 3 2 1 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 5 1 15 Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 68 Gate charge waveforms 66 64 62 VBR(DSS)[V] 6 58 56 54 52 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9
OptiMOS TM PowerTransistor,6V 5PackageOutlines 1) partially covered with Mold Flash DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.2 2.4.87.94 b.7.9.28.35 b1 9.7 9.9.382.39 b2.42.5.17.2 c D D2 E E1 E4 E5 e H H1.4 1.28 9.7.6 1.58.16.45.24.416 3.3.13 1.1.382.398 7.5.295 8.5.335 9.46.372 1.2 (BSC).47 (BSC) 11.48 11.88.452.468 6.55 6.75.258.266 H2 7.15.281 H3 3.59.141 H4 3.26.128 N 8 8 K1 4.18.165 L 1.6 2.1.63.83 L1.7.28 L2.6.24 L4 1. 1.3.39.51 DOCUMENT NO. Z8B169619 SCALE 2 2 4mm EUROPEAN PROJECTION ISSUE DATE 22214 REVISION 2 Figure1OutlinePGHSOF8 1
OptiMOS TM PowerTransistor,6V RevisionHistory Revision:216129,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 216129 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 216InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 11