4 Drive Nch MOS FET Structure Silicon N-channel MOS FET traistor External dimeio (Unit : mm) UMT3 Features ) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4). 5) Drive circuits can be simple. 6) Parallel use is easy. () Source (2) Gate (3) Drain 0.9 0.3 0.2 0.7 (3).25 2. (2) () 0.65 0.65.3 0.5 0.Min. Each lead has same dimeio Abbreviated symbol : KP Applicatio Switching Packaging specificatio Equivalent circuit Package Code Type Basic ordering unit (pieces) Taping T06 3000 (2) (3) 2 Absolute maximum ratings () Parameter Symbol Limits Unit Drain-source voltage DSS 60 Gate-source voltage Continuous GSS ID ±20 ±200 Drain current IDP ±800 Source current (Body diode) Continuous IS ISP 200 800 Total power dissipation Channel temperature 2 PD Tch 200 50 mw C Storage temperature Tstg 55 to +50 C Pw 0µs, Duty cycle % 2 Each terminal mounted on a recommended ESD PROTECTION DIODE 2 BODY DIODE () () Source (2) Gate (3) Drain A protection diode has been built in between the gate and the source to protect agait static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 625 C / W With each pin mounted on the recommended land. Rev.B /4
Electrical characteristics () Parameter Symbol Min. Typ. Max. Unit Test Conditio Gate leakage current IGSS ±0 µa GS=±20, DS=0 Drain-source breakdown voltage (BR) DSS 60 ID=, Drain cutoff current IDSS µa DS=60, Gate threshold voltage GS (th) DS=0, ID= Drain-source on-state resistance RDS (on).7 2.4 2.8 4.0 Ω ID=200, ID=200, GS=4 Forward trafer admittance l Yfs l 0. S DS=0, ID=200 Input capacitance Output capacitance Reverse trafer capacitance Ciss Coss Crss 5 8 4 DS=0 f=mhz Turn-on delay time Rise time td (on) tr 6 5 ID=00, DD 30 Turn-off delay time Fall time td (off) tf 2 95 RL=300Ω RG=0Ω Total gate charge Qg 2.2 4.4 DD 30 Gate-source charge Gate-drain charge Qgs Qgd 0.6 0.3 ID=200 Body diode characteristics (Source-Drain) () Parameter Symbol Min. Typ. Max. Unit Conditio Forward voltage SD.2 IS=200, Rev.B 2/4
Electrical characteristic curves 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0. 0 8 6 4 3.5 GS=3 0.0 0.0 0.5.0.5 3.0 3.5 4.0 DRAIN-SOURCE OLTAGE : DS () Fig. Typical Output Characteristics 0. 0.0 DS=0 Ta=25 C 25 C 75 C 25 C 0.00 0.0 0.5.0.5 3.0 3.5 4.0 4.5 GATE-SOURCE OLTAGE : GS () Fig.2 Typical Trafer Characteristics GATE THRESHOLD OLTAGE : GS (th) ().5.0 0.5 DS=0 ID= 0.0 50 25 0 25 50 75 00 25 50 CHANNEL TEMPERATURE : Tch ( C) Fig.3 Gate Threshold oltage vs. Channel Temperature 0.0 0.0 0..0 0.0 0.0 0. GS=4.0 7 6 5 4 3 2 00 ID=200 0 0 5 0 5 20 GATE-SOURCE OLTAGE : GS () Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source oltage 3.0.5 ID=200 00.0 50 25 0 25 50 75 00 25 50 CHANNEL TEMPERATURE : Tch ( C) REERSE DRAIN CURRENT : IDR (A) 0. 0.0 0.00 0.0 0.2 0.4 0.6 0.8.0.2 SOURCE-DRAIN OLTAGE : SD () REERSE DRAIN CURRENT : IDR (A) 0 0. 0.0 0 0.00 0.0 0.2 0.4 0.6 0.8.0.2 SOURCE-DRAIN OLTAGE : SD () Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.8 Reverse Drain Current vs. Source-Drain oltage ( Ι ) Fig.9 Reverse Drain Current vs. Source-Drain oltage ( ΙΙ ) Rev.B 3/4
FORWARD TRANSFER ADMITTANCE : I Yfs I (S) 0. 0.0 0.00 0.00 0.0 0. CAPACITANCE : C () 00 0 f=mhz Ciss Coss Crss 0.0 0. 0 00 DRAIN-SOURCE OLTAGE : DS () SWITCHING TIME : t () 000 00 0 td(on) td(off) DD=30 RG=0Ω 0 00 000 DRAIN CURRENT : ID () tr tf Fig.0 Forward Trafer Admittance vs. Drain Current Fig. Typical Capacitance vs. Drain-Source oltage Fig.2 Switching Characteristics Switching characteristics measurement circuit Pulse width GS ID DS GS 50% 0% 50% RG D.U.T. RL DS 0% 0% DD td (on) tr td (off) tf ton toff Fig.3 Switching time test circuit Fig.4 Switching time waveforms Rev.B 4/4
Appendix Notes No technical content pages of this document may be reproduced in any form or tramitted by any mea without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specificatio for the product described in this document are for reference only. Upon actual use, therefore, please request that specificatio to be separately delivered. Application circuit diagrams and circuit cotants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditio when designing circuits and deciding upon circuit cotants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustratio of such devices and not as the specificatio for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or licee to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communicatio devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical itruments, traportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to coult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapo of Mass Destruction. Appendix-Rev.