2010 22nd IEEE International Semiconductor Laser Conference (ISLC 2010) Kyoto, Japan 26 30 September 2010 IEEE Catalog Number: ISBN: CFP10SLC-PRT 978-1-4244-5683-3
Monday, 27 September 2010 MA MA1 Plenary Session Quantum Cascade Lasers A MA2 Blue to Green Nitride LDs and InGaN-based White LEDs MA3 Advances in VCSELs for Communication and Sensing 1 MB Novel VCSEL Structures MB1 High-Contrast Gratings as New Platform for Integrated Optoelectronics 3 MB2 CW Current Injection of GaN-based Vertical Cavity Surface Emitting Laser with 5 Hybrid Mirrors at Room Temperature MB3 Multi-wavelength 1060nm-band VCSEL Array with Tapered Hollow Waveguide 7 Multiplexer MB4 Widely Tunable High-Speed Bulk-Micromachined Short-Wavelength MEMS-VCSEL 9 MB5 Multiwavelength HCG-VCSEL Array 11 MB6 1550 nm High Contrast Grating VCSEL Using Proton-Implant-Defined Aperture 13 MB7 Substrate-Free Metal Cavity Surface-Emitting Laser with CW Operation at Room 15 Temperature MC Visible to UV Lasers and LEDs MC1 InGaN based True Green Laser Diodes on Novel Semi-Polar {20-21} GaN 17 Substrates MC2 540-nm Green Room-Temperature CW Operation of BeZnCdSe Single Quantum 19 Well Laser Diode MC3 First Achievement of Deep-UV LED on Si substrate 21 MC4 Green Region Stimulated Emission in Optically Pumped InGaN/GaN MQW 23 Nanocolumn Arrays of Triangular Lattice MC5 Marked Efficiency Enhancement of 250 nm-band AlGaN Deep-UV LEDs using 25 Multiquantum-Barrier MC6 Efficiency Limitations of Green InGaN LEDs and Laser Diodes 27
Catastrophic-Optical-Damage-Free InGaN Laser Diodes with Epitaxially-Formed Window Structure 29 Tuesday, 28 September 2010 TuA QD I TuA1 Electrically Driven Quantum Dot Micropillar Single Photon Sources 31 TuA2 Room-Temperature Nonclassical Light Generation in a Microcavity-Single- 33 Quamtum-Dot System TuA3 Dot State Distribution, Gain and Threshold in 700nm Band InP/AlGaInP Quantum 35 Dot TuA4 Wavelength Tunability of Highly Stacked Quantum Dot Laser Fabricated by a 37 Strain Compensation Technique TuA5 Many Body Effects in Quantum Dot Laser Structures 39 TuB Mid-Infrared Lasers TuB1 Temperature Sensitivity of Mid-Infrared Type II W Interband Cascade 41 Lasers(ICL)Emitting at 4.1µm at Room Temperature TuB2 Measurement of Internal Quantum Efficiency and Temperature Dependence of 43 Gain and Loss in Interband Cascade Lasers Near Room-Temperature TuB3 GaSb-Based Laser Diodes Operating Within the Spectra Range of 2-3.5 µm 45 TuB4 Large-Aperture Single-Mode GaSb-Based BTJ-VCSELs at 2.62 µm 47 TuB5 Broadband Quantum Cascade Lasers - From White Light Sources to Ttunable 49 Broadband Single Mode Sources TuB6 External Cavity Spectral Beam Combining of 4.6 µm Emitting Quantum Cascade 51 Laser Arrays TuB7 Directional Single Mode QCL Emission Using Metal Grating Second Order Coupler 53 at Room Temperature TuC Photonic Integration TuC1 Current View of Large Scale Photonic Integrated Circuits on Indium Phosphide 55 TuC2 Low-voltage Operation of 100-Gbit/s EADFB Laser Array Module 57 TuC3 High-power output monolithically integrated tunable DFB-LD array and 59 Mach-Zehnder modulator with 2-channel SOA TuC4
Integrated AlGaAs Quantum-Well Ridge-Structure Two-Wavelength DBR Laser for THz Wave Generation 61 TuC5 Uncooled 25-Gb/s 2-km Transmission of a 1.3-µm Surface-emitting Laser 63 P Poster Session P1 Reverse Ground-State Excited-State Emission Transition Dynamics in Two-Section 65 Quantum Dot Semiconductor Lasers: Simultaneous Two-State Mode-Locking and State- Switching via a Resistor Self-Electro-Optic Effect Device (SEED) P2 Carrier Injection-Level Dependence of Lateral Ambipolar Diffusion in S-K 67 Quantum-Dot Lasers P3 Towards 1.55 µm GaAs Based Lasers Using Quantum Dot Bilayers 69 P4 1270 nm Quantum Dot Based Semiconductor Disk Lasers 71 P5 Doping Effect on Two-State Lasing in 1.3µm InAs/GaAs Quantum Dot Lasers 73 P6 Thermal behavior of 1.55 µm (100) InAs/InP-Based Quantum Dot Lasers 75 P7 Two State Lasing in InAs/GaAs Dots; The Role of the Bimodal Size Distribution 77 P8 Wavelength Tuning In Quantum Dot Semiconductor Disc Lasers 79 P9 1.3-µm Quantum-Dot Optical Preamplifier with Narrow Bandwidth 81 P10 Modulation Bandwidth Enhancement of VCSELs with Lateral Optical Feedback of 83 Slow P11 Interference Effects on the Frequency Response of Injection-Locked VCSELs 85 P12 Trade-offs in the Realization of Electrically Pumped Vertical External Cavity 87 Surface Emitting Lasers P13 Polarization-Resolved Nonlinear Dynamics Induced by Orthogonal Optical 89 Injection in 1550 nm-vertical-cavity Surface-Emitting Lasers P14 Design Rules for High Wall-Plug Efficiency Quantum Cascade Lasers 91 P15 Short Injector Interband Cascade Lasers in the 3.3-3.6µm Spectral Range 93 P16 Physical Properties of Short Wavelength 2.6µm InAs/AlSb-Based Quantum 95 Cascade P17 Development of AlGaN-Based Deep-UV LEDs using High-Quality AlN on Sapphire 97
P18 Observation of Laser Action from Gallium Nitride Nanorods Under Optical 99 Pumping P19 Impact of Nonpolar Plane for Deep Ultraviolet Laser Diodes Based on AlGaN/AlN 101 Quantum Wells P20 Dicke superradiance in GaN Quantum Wells 103 P21 Experimental Demonstration of Enhanced Slow and Fast Light by Forced 105 Coherent Population Oscillations in a SOA P22 Experimental Demonstration of SOAs Optical Bandwidth Widening Based on 107 Selective Filtering P23 Lasing Properties of Monolithically Integrated Ga(NAsP)/(BGa)P QW Lasers on a 109 Silicon Substrate Grown by MOVPE P24 Bismide-Alloys for Higher Efficiency Infrared Semiconductor Lasers 111 P25 Mode Locking and Bandwidth Enhancement in Single Section Ridge Laser with 113 Two Spatial Modes P26 Novel Theory and Experiments on Dynamics of Polarised Optical Injection in 115 Long-Wavelength VCSELs P27 High Spectral Quality Defect-Coupled 1550nm Micro-Disc Lasers 117 P28 Mode Coupling and Directional Emission in Mirocylinder Lasers 119 P29 40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module with Novel 121 Packaging P30 Low Hysteresis Threshold Current (39mA) Demonstration Using Active 123 Multi-Mode Interferometer Bi-Stable Laser Diodes P31 Phase Conjugate Wave Generation Based on Self-Pumped Four-Wave Mixing in a 125 Broad-Area Laser Diode P32 Full Characterization of a Semiconductor Laser Beam by Simultaneous Capture 127 of the Near- and Far-Field P33 Quarter-Lambda-Shifted Photonic Crystal Lasers 129 P34 First-Principles Study of Light Emission from Germanium Quantum-Well 131 P35 The Antiguiding Parameter in Mid-Infrared Optically Pumped Semiconductor 133 Lasers Wednesday, 29 September 2010
Lasers on Silicon WA1 Semiconductor Lasers on Silicon 135 WA2 First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser with 137 Lateral Current Injection BH Structure WA3 Integrated Broadband Hybrid Silicon DFB Laser Array using Quantum Well 139 Intermixing WA4 A Fully Integrated Hybrid Silicon AWG Based Multiwavelength Laser 141 WA5 MOVPE Growth and Characterization of Ga(NAsP) Laser Structures Monolithically 143 Integrated on Si (001) Substrates WB High Power Semiconductor Lasers WB1 New Ultrafast High Power kw Class Lasers Open Next Generation Applications 145 WB2 A Penalty-Free Approach to Wavelength Stabilization of High Power Diode Lasers 146 from 900 nm to 1900 nm WB3 Broad-Area Lasers with Internal Surface Bragg Gratings for Wavelength 148 Stabilization at 980nm WB4 High power 625-nm AlGaInP laser diode 150 WC VCSEL Performance WC1 Recorded Low Power Dissipation of 0.14 mw/gbps in 1060 nm VCSELs for 152 "Green" Optical Interconnection WC2 850 nm VCSEL Operating Error-Free at 40 Gbit/s 154 WC3 1.55 µm High-Speed VCSELs Enabling Error-Free Fiber-Transmission up to 25 156 Gbit/s WC4 High-speed 980-nm VCSELs for very short reach optical interconnects 158 WC5 Controlled Temperature Dependence of Lasing Wavelength of VCSELs with a 160 Thermally Actuated Cantilever WC6 15 mw of Continuous Wave Single Transverse Mode Output Power from Planar 162 960 nm Bottom-Emitting VCSELs with Multiple Tapered Oxide Layers WC7 Electrically-Pumped VECSELs Suitable for Passive Modelocking: Design, 164 Simulation and Characterization in Continuous Wave WC8 Class-A Semiconductor Lasers for the Transport and Generation of Optically 166 Carried RF Analog Signals
QD II WD1 Ultra-short Optical Pulse Generation by InGaAs Quantum-Dot Diode Emitters 168 WD2 New Tapered Quantum-Dot Mode-Locked Laser Diode with High Peak Power, 170 Low Divergence and Good Beam Quality WD3 202nm Continuous Tuning from High-Power External-Cavity InAs/GaAs 172 Quantum-Dot WD4 Effect of Carrier Transport on Modulation Bandwidth of 1.3-µm InAs/GaAs 174 Self-Assembled Quantum-Dot Lasers WD5 Will Quantum Dots Replace Quantum Wells as the Active Media of Choice in 176 Future Semiconductor Lasers? WD6 1.54 µm InAs/InP P-Type Doped Quantum Dash Based DFB Lasers for Isolator 178 Free Operation Thursday, 30 September 2010 ThA Photonic Crystal Lasers ThA1 Photonic-Crystal Surface-Emitting Laser 180 ThA2 Visible Photonic Crystal VCSELs with High Quality Output Beam 181 ThA3 GaN-Based Distributed-Feedback Surface-Emitting Laser with Embedded 183 Two-Dimensional Photonic Crystal Fabricated by Mass-Transport Technique ThA4 Nano-Slit Photonic Crystal Nanolaser with Mode Localization in Air 185 ThA5 Decimated Photonic Crystal Membrane Defect Cavity Lasers 187 ThB High Speed Diode Lasers ThB1 Recent Progress in 1.3-µm Uncooled InGaAlAs Directly Modulated Lasers 189 ThB2 High Power and Semi-cooled (45 C) operation of 1.55-µm 43-Gbit/s Electro- 191 Absorption Modulator Integrated DFB Laser ThB3 Uncooled 40-Gbps Direct Modulation of 1.3-µm-Wavelength AlGaInAs 193 Distributed Reflector Lasers with Semi-Insulating Buried-Heterostructure ThB4 Large Bandwidth TO-CAN Module with LCP Based Transmission Line as Serial 40 195 Gb/s 1.3/1.55-µm Light Source ThB5 25.8Gbps Direct Modulation of BH AlGaInAs DFB Lasers with p-inp Substrate for 197 Low Driving Current ThC
Novel Lasers Structures ThC1 Lasing in a One-Dimensional Plasmonic Crystal 199 ThC2 Exciton-Polariton Laser Diodes 201 ThC3 Electron-Cooper-pair Operated Long-wavelength Light Emitting Diodes 203 ThC4 Lasing in GaAs 1-x Bi x /GaAs Thin Film Cavity with Low-Temperature-Dependent 205 Oscillation Wavelength ThC5 Single Facet Teardrop Laser with Matched Bends Design 207 PD1 Additional Papers Integrated 30GHz Passive Ring Mode-Locked Laser with Gain Flattening Filter 209 PD2 First Demonstration of Modulation via Field-Induced Charge-Separation in VCSELS 211 PD3 Integrated Tunable VCSELs with Simple MEMS Technology 213