4 PRODUCT SUMMARY at V GS = V 8 nc at V GS = 4.5 V D FEATURES TrenchFET Ⅱ Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 2/65/EU APPLICATIONS OR-ing Server DC/DC G G D S Top View S ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) Drain-Source Voltage V DS Gate-Source Voltage V GS ± 2 Continuous Drain Current (T J = 75 C) T C = 7 C I D a, e T A = 7 C b, c Pulsed Drain Current I DM Avalanche Current Pulse I AS L =. mh Single Pulse Avalanche Energy E AS Continuous Source-Drain Diode Current Maximum Power Dissipation N-Channel MOSFET T C = 7 C T A = 7 C e b, c I S a, e A 3. b, c P D 2 a 3. b, c 2. b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C V A W THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambient b, d t sec R thja Maximum Junction-to-Case Steady State R thjc..6 Notes: a. Based on. b. Surface mounted on " x " FR4 board. c. t = sec. d. Maximum under steady state conditions is 9 C/W. e. Calculated based on maximum junction temperature. Package limitation current is A. C/W
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 A V V DS Temperature Coefficient V DS /T J 35 I D = 25 A V GS(th) Temperature Coefficient V GS(th) /T J -7.5 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 A.5 2.5 V Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V ± na V DS = 3 V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = 55 C A On-State Drain Current a I D(on) V DS 5 V, V GS = V 9 A V GS = V, I D = A Drain-Source On-State Resistance a.45 R DS(on) V GS = 4.5 V, I D = 27 A.63 Forward Transconductance a g fs V DS = V, I D = A 6 S Input Capacitance C iss Output Capacitance C oss V DS = 5 V, V GS = V, f = MHz 7 pf Reverse Transfer Capacitance C rss 9 V DS = 5 V, V GS = V, I D = A Total Gate Charge Q g 8 nc Gate-Source Charge Q gs V DS = 5 V, V GS = 4.5 V, I D = A 3 Gate-Drain Charge Q gd 2 Gate Resistance R g f = MHz.4 Turn-On Delay Time t d(on) 8 Rise Time t r V DD = 5 V, R L =.625 Turn-Off Delay Time t d(off) I D 24 A, V GEN = V, R g = 7 Fall Time t f Turn-On Delay Time t d(on) 55 ns Rise Time t r V DD = 5 V, R L =.67 8 Turn-Off Delay Time t d(off) I D A, V GEN = 4.5 V, R g = 55 Fall Time t f 2 Continuous Source-Drain Diode Current I S Pulse Diode Forward Current a I SM A Body Diode Voltage V SD I S = 22 A.8.2 V Body Diode Reverse Recovery Time t rr 52 ns Body Diode Reverse Recovery Charge Q rr 7 nc I F = 2 A, di/dt = A/ s, T J = 25 C Reverse Recovery Fall Time t a 27 ns Reverse Recovery Rise Time t b 25 Notes: a. Pulse test; pulse width 3 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) V GS = V thru 4 V 3. 2.4 ID - Drain Current (A) V GS = 2 V V GS = 3 V..5..5 2. 2.5 V DS - Drain-to-Source Voltage (V).8.2.6 T C = - 55 C. 2 3 4 V GS - Gate-to-Source Voltage (V) 6 5 (S) Transconductance 4 3 2 T C = - 55 C - G f s 2 3 4 5 6 7 8 9 I D - Drain Current (A) C iss Capacitance (pf) C - - Gate-to-Source Voltage (V) R DS(on) On-Resistanc e (Ω) I D - Drain Current (A) V GS = 4.5 V V GS = V 5 3 45 6 75 9 I D - Drain Current (A) 8 I D = A V DS = 5 V 6 4 V DS = 24 V 3 C oss VGS 2 C rss 6 2 8 24 3 V DS - Drain-to-Source Voltage (V) 3 6 9 2 5 8 Q g - Total Gate Charge (nc) 3
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) R D S(on ) - On-Res istance (Normalized ).6.4.2..8 V GS = V, I D = A V GS = 4.5 V, I D = 27 A (A) Source Current - IS.. T J = 5 C T J = 25 C.6-5 - 25 25 5 75 25 5 75 T J - Junction Temperature ( C)..2.4.6.8 V SD - Source-to-Drain Voltage (V).5 2.8 I D = A R DS(on) - On-Resistanc e (Ω).4.3.2. Variance (V) V GS(th ) 2.4 2..6.2 I D = 25 A. 2 4 6 8 V GS - Gate-to-Source Voltage (V).8-5 - 25 25 5 75 25 5 75 T J - Temperature ( C) *Limited by r DS (on) - Drain Current (A) I D 3. ms ms s s dc. Single Pulse.. V DS - Drain-to-Source Voltage (V) *V GS minimum V GS at which r DS(on) is specified 4
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 3 3 25 25 I D - Drain Current (A ) 2 5 Package Limited Dissipation (W) Power 2 5 5 5 25 5 75 25 5 75 T C - Case Temperature ( C) 25 5 75 25 5 75 TC - Case Temperature ( C) *The power dissipation P D is based on T J(max) = 75 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. - 4-3 - 2 - Square Wave Pulse Duration (sec) 5
TO-252AA CASE OUTLINE E b3 A C2 DIM. MIN. MAX. MIN. MAX. L3 A 2.8 2.38.86.94 A -.27 -.5 b.64.88.25.35 b2.76.4.3.45 D H b3 4.95 5.46.95.25 C.46.6.8.24 C2.46.89.8.35 b e e b2 L4 L5 gage plane height (.5 mm) C A L D 5.97 6.22.235.245 D 5.2 -.25 - E 6.35 6.73.25.265 E 4.32 -.7 - H 9.4.4.37.4 e 2.28 BSC.9 BSC e 4.56 BSC.8 BSC L.4.78.55.7 L3.89.27.35.5 D L4 -.2 -.4 L5.4.52.45.6 E ECN: X2-247-Rev. M, 24-Dec-2 DWG: 5347 Note Dimension L3 is for reference only.
.224 (5.69).9 (2.286).87 (2.22).42 (.668).243 (6.8).8 (4.572).55 (.397) Recommended Minimum Pads Dimensions in Inches/(mm)
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