M54640P. Stepper Motor Driver. Description. Features. Application. Function. Pin Configuration. REJ03F Z Rev.1.0 Sep.19.

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Stepper Motor Driver REJ03F0042-000Z Rev..0 Sep.9.2003 Description The M54640P is a semiconductor IC to drive a stepper motor by the bipolar method. Features Bipolar and constant-current drive Wide current control rage (20 00mA) Wide supply voltage drive range (0 40V) Built in flywheel diodes Current level can be changed by steps or continuously. Built in a thermal shutdown circuit Application Printer, FDD, HDD, Fax Function The M54640P drives a stepper motor by the bipolar drive method to change the current direction of a single coil and controls the current direction with PHASE input pin. In order to obtain higher efficiency, the constant current drive system to control the coil current is introduced. The current value can be selected among four levels (0 to max.) by selecting the combination of three internal comparators by logic input. It also can be continuously changed by controlling the reference voltage. Conversion to voltage is conducted by the current value sensing resistor (Rs) and the voltage is sensed with each comparator, and then each comparator output triggers monomulti and the current is cut for a certain time (t OFF ) by utilizing the inductance of the coil. Also, diodes needed for choppering and a thermal shutdown circuit as a countermeasure against overvoltage are built in this circuit. Pin Configuration Output MB One-shot-multi time constant T Output power VMM supply Power supply Output current value setting Output current direction switching GND VCC I Ph 2 3 4 5 6 7 M54640P 6 E Current sensor 5 MA Output Output power 4 VMM supply 3 GND 2 Comparator VR reference input 0 C Comparator input Output current 9 Io setting Outline 6P4 Rev..0, Sep.9.2003, page of 9

Block Diagram Comparator reference input VR VCC 6 Output Output MA 5 MB Cutput current direction switcing Ph Schmitt trigger 3 VMM 4 Output power supply Output current value setting I I0 7 9 00 0 0 > > VKH VKM Monostable VKL toff = 0.69 RT CT GND 4 5 2 3 Current sensor 0 2 6 C T E Comparator input One-shot-multi time constant Current sensor Absolute Maximum Ratings Parameter Symbol Ratings Unit Conditions Supply voltage V CC 0.3 to 7 V Output supply voltage V MM 0.3 to 45 V Logic input voltage V L 0.3 to 6 V Analog input voltage V C 0.3 to Vcc V Comparative input voltage V R 0.3 to 5 V Logic input current I L 0 ma Analog input current I C 0 ma Output supply current I MM ±000 ma (Ta = 25 C, unless otherwise noted.) Power dissipation Pd.92 W Mounted on a board Operating temperature Topr 20 to 75 C Storage temperature Tstg 55 to 25 C Note : Every voltage value is measured when the voltage at GND pin is 0V. The maximum and the minimum of each voltage value are shown in absolute values. Regarding current directions, inflow current is shown in a positive value and outflow current is shown in a negative value. The maximum and the minimum of each current value are shown in absolute values. Rev..0, Sep.9.2003, page 2 of 9

Recommended Operating Condition (Ta = 25 C, unless otherwise noted.) Limits Parameter Symbol Min. Typ. Max. Unit Supply voltage V CC 4.75 5 5.25 V Output supply voltage V MM 0 40 V Output current I O 20 00 ma Logic input rise time t PLH 2 µs Logic input fall time t PHL 2 µs Thermal shutdown temperature T ON 75 C Electrical characteristics (Ta = 25 C, V CC = 5.0V, unless otherwise noted.) Limits Parameter Symbol Min. Typ. Max. Unit Test conditions Logic input voltage H V IH 2.0 V CC V V CC =5V L V IL 0 0. Comparator threshold V CH 400 430 450 mv V R =5V, I0=I=0 V CM 240 260 20 V R =5V, I0=,I=0 V CL 75 90 00 V R =5V, I0=0, I= Comparator input current I CO 20 20 µa Output cutoff current I OFF 00 µa I0=I=(Ta=25 C) Saturation voltage Vsat 4.0 V The voltage at the sensing resistor is not included. I O =500mA Cutoff time t OFF 25 30 35 µs V MM =0V, t ON 5µs Turnoff delay td.6 2.0 µs Ta=25 C, dvk/dt 50mV/µs Supply current I CC 25 ma V CC =5V Logic input current H I IH 20 µa V I =2.4V L I IL 0.4 ma V I =0.4V Rev..0, Sep.9.2003, page 3 of 9

Switching Characteristics Test Circuit CT MB E 6 2 T MA 5 RS RT 3 4 5 VMM GND VMM GND 4 3 2 CV RC VCC 6 VCC VR 7 I C 0 Phase I0 9 CC RS RC RT CC CT CV :Ω : kω : 56kΩ : 20pF : 20pF : 47µF Switching Waveforms VMA VMB or VMB VMA toff = 0.69RTCT /2 ton toff td VCH VCM VCL Rev..0, Sep.9.2003, page 4 of 9

Application Description PHASE INPUT Phase input decides the output mode. Phase MA MB H H L L L H I0, I I0 and I fixed based on the comparison voltage V R decide the output current level. The current level can be continuously changed by changing the voltage at V R continuously. I0 I Current level H H 0 L H Low H L Average L L High Current sensor When the voltage fall at the current sensing resistor and the selected current level becomes of the same level, the comparator triggers the monostable. Then, the output stage is cut off for a certain time (t OFF ). During this cutoff time, the current volume decreases slightly and falls short of the comparison level. After the cutoff time (t OFF ), the output stage is in ON state again. This operation is repeated. Single pulse generator At the comparator output rise edge, the monostable is triggered. The pulse width of the monostable at the external timing Rt and Ct is as follows. t OFF = 0.69 x RtCt Retrigger during t OFF is neglected. Analog control The output current level can be continuously changed by changing the voltage at V R or the feedback voltage to the comparator. Rev..0, Sep.9.2003, page 5 of 9

Timing Chart 2-phase excitation Phase A Phase B I0, = (A) = 0 I0, = (B) = 0-2-phase excitation Phase A Phase B I0, = (A) I0, = (B) Microstep (divided into six) Phase A Phase B I0 (A) I (A) I0 (B) I (B) Rev..0, Sep.9.2003, page 6 of 9

Typical Characteristics (Absolute maximum ratings) Safety operating temperature.0 Output current Io (A) 0. 0.6 0.4 0.2 B A C A : Recommended B : Schottky diodes should be externally connected between output pins and power supply pins. C : Schottky diodes should be externally instaalled between output pins and power supply pins and between output pins and GND pin. 0 0 0 20 30 40 45 50 Output VMM (V) Thermal derating 0.0 θj-c = 0 C/W Allowable power dissipation (W).0 6.0 4.0 2.0 C B A A : Mounted on a 25cm 2 glass epoxy board which is coated with copper on one side. θc-a = 45 C/W B : C : 0cm 2 aluminum heat sink (t) is used. θc-a = 25 C/W 00cm 2 aluminum heat sink (t) is used. θc-a = 0 C/W Tj(max) = 50 C 0 0 25 50 75 00 Ambient ( C) Rev..0, Sep.9.2003, page 7 of 9

Application Example Ω 20pF kω 5V 6 5 4 3 2 0 9 M54640P 2 3 4 5 6 7 20pF Phase A 56kΩ I0A Ω IA kω 20pF 24V 47µF Stepper motor 6 5 4 3 2 0 9 M54640P 2 3 4 5 6 7 20pF 56kΩ Phase B I0B IB Precautions for use () When the whole output current changes by a large margin (for example, when overheat protection operation causes intermittent flow of output current), the supply voltage may undergo a change. Therefore, selection and wiring of power supply should be conducted cautiously to avoid such a situation that the supply voltage exceeds the absolute maximum ratings. (2) When the supply voltage changes by a large margin, the operation of this IC may become unstable. In this case, the change of supply voltage can be controlled by connecting a capacitor at the point near to IC pin between Vcc pin and GND pin. (See above application example.) (3) Thermal shutdown function The state of thermal shutdown operation may differ according to the way of wiring within a board. Therefore, sufficient board evaluation should be conducted before use. When the board is changed, operation on the replacing board should be evaluated. The circuit board on which this IC is mounted is designed to realize low impedance between power supply and output pin. Therefore, it is desirable to take a safe measure such as fixing a fuse to avoid such a situation that the board is damaged by a fire when output pin is internally short-circuited by excessively applied surge voltage by accident. Rev..0, Sep.9.2003, page of 9

Package Dimensions 6P4 MMP Plastic 6pin 300mil DIP EIAJ Package Code JEDEC Code Weight(g) Lead Material DIP6-P-300-2.54.0 Alloy 42/Cu Alloy 6 9 E e c D Symbol Dimension in Millimeters Min Nom Max A 4.5 A 0.5 A2 A2 b b b2 c D E e e L 3.3 0.4 0.5 0.59.4.5. 0.9.0.3 0.22 0.27 0.34. 9.0 9.2 6.5 6.3 6.45 2.54 7.62 3.0 0 5 L A SEATING PLANE A e b b b2 Rev..0, Sep.9.2003, page 9 of 9

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 00-0004, Japan Keep safety first in your circuit designs!. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES http://www.renesas.com Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 9534-36, U.S.A Tel: <> (40) 32-7500 Fax: <> (40) 32-750 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL 5FH, United Kingdom Tel: <44> (62) 55 00, Fax: <44> (62) 55 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-5622 Feldkirchen, Germany Tel: <49> (9) 30 70 0, Fax: <49> (9) 929 30 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <52> 2265-66, Fax: <52> 2375-636 Renesas Technology Taiwan Co., Ltd. FL 0, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <6> (2) 275-2, Fax: <6> (2) 273-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <6> (2) 6472-00, Fax: <6> (2) 645-2952 Renesas Technology Singapore Pte. Ltd., Harbour Front Avenue, #06-0, Keppel Bay Tower, Singapore 09632 Tel: <65> 623-0200, Fax: <65> 627-00 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon.0

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