Dual N-Channel 3 V (D-S) MOSFETs PRODUCT SUMMARY Channel- 3 Channel-2 3 V DS (V) R DS(on) ( ) (Max.) I D (A) Q g (Typ.).2 at V GS = V 6 a 6.8 nc.5 at V GS =.5 V 6 a.37 at V GS = V 28 a 32 nc.5 at V GS =.5 V 28 a FEATURES TrenchFET Power MOSFETs % R g and UIS Tested Material categorization: For definitions of compliance please see /doc?9992 APPLICATIONS Notebook System Power POL Synchronous Buck Converter PowerPAIR 6 x 5 D Pin G D 5 mm 2 D D 3 D G 2 S /D 2 8 Pin 9 7 S 2 6 6 mm 5 Ordering Information: -T-GE3 (Lead (Pb)-free and Halogen-free) G N-Channel MOSFET G 2 N-Channel 2 MOSFET S 2 S /D 2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Symbol Channel- Channel-2 Unit Drain-Source Voltage V DS 3 V Gate-Source Voltage V GS ± 2 T C = 25 C 6 a 28 a T C = 7 C 6 a 28 a Continuous Drain Current (T J = 5 C) I T D A = 25 C.3 b, c 26a, b, c T A = 7 C. b, c 2a, b, c A Pulsed Drain Current (t = 3 µs) I DM 5 T C = 25 C 6 a Continuous Source Drain Diode Current I 28 a T S A = 25 C 3. b, c.3 b, c Single Pulse Avalanche Current I L =. mh AS 8 35 Single Pulse Avalanche Energy E AS 6 6 mj T C = 25 C 29 T C = 7 C 8 6 Maximum Power Dissipation P D W T A = 25 C.2 b, c 5.2 b, c T A = 7 C 2.7 b, c 3.3 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) d, e 26 THERMAL RESISTANCE RATINGS Channel- Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambient b, f t s R thja 2 3 9 2 C/W Maximum Junction-to-Case (Drain) Steady State R thjc 3..3.25 Notes: a. Package limited. b. Surface mounted on " x " FR board. c. t = s. d. See solder profile (/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W for channel- and 55 C/W for channel-2. S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9 C
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V GS = V, I D = 25 µa Ch- 3 Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µa Ch-2 3 I D = 25 µa Ch- 33 V DS Temperature Coefficient V DS /T J I D = 25 µa Ch-2 37 I D = 25 µa Ch- - 5 V GS(th) Temperature Coefficient V GS(th) /T J I D = 25 µa Ch-2-7.5 V DS = V GS, I D = 25 µa Ch- 2.2 Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa Ch-2.2 2.2 Ch- ± Gate Source Leakage I GSS V DS = V, V GS = ± 2 V Ch-2 ± V DS = 3 V, V GS = V Ch- V DS = 3 V, V GS = V Ch-2 Zero Gate Voltage Drain Current I DSS V DS = 3 V, V GS = V, T J = 55 C Ch- 5 V DS = 3 V, V GS = V, T J = 55 C Ch-2 5 V DS 5 V, V GS = V On-State Drain Current b Ch- 2 I D(on) V DS 5 V, V GS = V Ch-2 2 V GS = V, I D = 3.8 A Ch-..2 V GS = V, I D = 2 A Drain-Source On-State Resistance b Ch-2.3.37 R DS(on) V GS =.5 V, I D = 2.6 A Ch-.2.5 V GS =.5 V, I D = 2 A Ch-2.35.5 V DS = V, I D = 3.8 A Forward Transconductance b Ch- 7 g fs V DS = V, I D = 2 A Ch-2 6 Dynamic a Ch- 79 Input Capacitance C iss Channel- Ch-2 383 V DS = 5 V, V GS = V, f = MHz Ch- 9 Output Capacitance C oss Ch-2 67 Channel-2 V DS = 5 V, V GS = V, f = MHz Ch- 76 Reverse Transfer Capacitance C rss Ch-2 35 V DS = 5 V, V GS = V, I D = 3.8 A Ch- 2 V Total Gate Charge Q DS = 5 V, V GS = V, I D = 2 A Ch-2 67.3 5 g Ch- 6.8 Channel- Ch-2 32 8 V DS = 5 V, V GS =.5 V, I D = 3.8 A Ch- 2.6 Gate-Source Charge Q gs Ch-2.8 Channel-2 V DS = 5 V, V GS =.5 V, I D = 2 A Ch-.9 Gate-Drain Charge Q gd Ch-2 9.3 Gate Resistance R g f = MHz Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle 2 %. Ch-. 2 Ch-2.2. 2.2 V mv/ C V na µa A S pf nc 2 S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamic a Ch- 5 3 Turn-On Delay Time t d(on) Channel- Ch-2 3 6 V DD = 5 V, R L =.5 Ch- 2 2 Rise Time t r I D A, V GEN =.5 V, R g = Ch-2 33 65 Turn-Off Delay Time t d(off) Channel-2 Ch- 2 V DD = 5 V, R L =.5 Ch-2 8 I D A, V GEN =.5 V, R g = Ch- 2 Fall Time t f Ch-2 2 25 ns Ch- 2 Turn-On Delay Time t d(on) Channel- Ch-2 5 3 V DD = 5 V, R L =.5 Ch- 2 2 Rise Time t r I D A, V GEN = V, R g = Ch-2 22 25 Turn-Off Delay Time t d(off) Channel-2 V DD = 5 V, R L =.5 Ch- Ch-2 2 8 Fall Time t f I D A, V GEN = V, R g = Ch- 2 Ch-2 2 Drain-Source Body Diode Characteristics Ch- 6 Continuous Source-Drain Diode Current I S T C = 25 C Ch-2 28 Pulse Diode Forward Current a Ch- 5 I SM Ch-2 A I S = A, V GS = V Ch-.85.2 Body Diode Voltage V SD I S = A, V GS = V Ch-2.8.2 V Ch- 2 Body Diode Reverse Recovery Time t rr Ch-2 3 6 ns Channel- Ch- 2 Body Diode Reverse Recovery Charge Q rr I F = A, di/dt = A/µs, T J = 25 C Ch-2 2 nc Ch- Reverse Recovery Fall Time t a Channel-2 I F = A, di/dt = A/µs, T J = 25 C Ch-2 7 Ch- 9 Reverse Recovery Rise Time t b Ch-2 3 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S2-53 Rev. A, 2-Mar-2 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 6 5 V GS =V thru V 2 6 3 2 V GS =3V 2 8 T C = 25 C V GS =2V..5..5 2. 2.5 3. V DS - Drain-to-Source Voltage (V) Output Characteristics. T C = 25 C T C =- 55 C..5..5 2. 2.5 3. 3.5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 2 - On-Resistance (Ω) R DS(on).2..8 V GS =.5V V GS =V C - Capacitance (pf) 8 6 C iss C oss 2 C rss.6 2 3 5 6 On-Resistance vs. Drain Current 5 5 2 25 3 V DS - Drain-to-Source Voltage (V) Capacitance.7 - Gate-to-Source Voltage (V) 8 6 I D = 3.8 A V DS =7.5V V DS =5V V DS =2V - On-Resistance (Normalized).6.5..3.2.. I D =3.8 A V GS =V;.5V V GS 2 R DS(on).9.8 3 6 9 2 5 Q g - Total Gate Charge (nc) Gate Charge.7-5 -- 25 25 5 75 25 5 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).3 I D =3.8 A.25 - Source Current (A) I S T J = 5 C T J = 25 C - On-Resistance (Ω) R DS(on).2.5..5 T J = 25 C T J =25 C...2..6.8..2 V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 2 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.9.8 5 (V) V GS(th).7.6.5..3.2 I D = 25 µa Power (W) 3 2...9.8-5 - 25 25 5 75 25 5 T J - Temperature ( C)... Time (s) Threshold Voltage Single Pulse Power Limited by R DS(on) *. T A = 25 C BVDSS Limited μs ms ms ms s s DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S2-53 Rev. A, 2-Mar-2 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 3 25 3 2 Package Limited Power (W) 2 5 5 25 5 75 25 5 T C - Case Temperature ( C) Current Derating* 25 5 75 25 5 T C - Case Temperature ( C) Power, Junction-to-Case * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2 Notes:. P DM..5 t t 2 t.2. Duty Cycle, D = t 2 2. Per Unit Base = R thja =65 C/W 3. T JM -T A =P DM Z (t) thja Single Pulse. Surface Mounted..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2..5.2 Single Pulse..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S2-53 Rev. A, 2-Mar-2 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 8 V GS = V thru V 6 6 2 V GS = 3 V 2 8 T C = 25 C T C = 25 C..5..5 2. V DS - Drain-to-Source Voltage (V) Output Characteristics.5 T C = - 55 C..5..5 2. 2.5 3. V GS - Gate-to-Source Voltage (V) Transfer Characteristics 5. C iss R DS(on) - On-Resistance (Ω).35.3.25 V GS =.5 V V GS = V C - Capacitance (pf) 3 2 C oss.2 2 6 8 On-Resistance vs. Drain Current C rss 5 5 2 25 3 V DS - Drain-to-Source Voltage (V) Capacitance.8 V GS - Gate-to-Source Voltage (V) 8 6 2 I D = 2 A V DS = 5 V V DS = 7.5 V V DS = 2 V R DS(on) - On-Resistance (Normalized).6..2..8 I D = 2 A V GS = V V GS =.5 V 2 6 8 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 8 S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted). I D = 2 A.8 I S - Source Current (A) T J = 5 C T J = 25 C R DS(on) - On-Resistance (Ω).6..2 T J = 25 C T J = 25 C...2..6.8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 2.. 2 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.2 2. 8 V GS(th) (V).8.6..2 I D = 25 μa Power (W) 6. 2.8.6-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power Limited by R DS(on) *. T A = 25 C BVDSS Limited ms ms ms s s DC... V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S2-53 Rev. A, 2-Mar-2 9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 8 8 6 2 Package Limited Power (W) 6 2 25 5 75 25 5 T C - Case Temperature ( C) Current Derating* 25 5 75 25 5 T C - Case Temperature ( C) Power, Junction-to-Case * The power dissipation P D is based on T J(max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse 3. T JM -T A =P DM Z (t) thja. Surface Mounted..... Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 55 C/W Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.2..5.2 Single Pulse..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?63783. S2-53 Rev. A, 2-Mar-2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information PowerPAIR 6 x 5 Case Outline 2X. C D Pin 8 Pin 7 Pin 6 Pin 5 A z Pin 5 b Pin 6 Pin 7 L3 Pin 8 E L D K E K D E2 Pin Pin 2 Pin 3 Pin 2X. C Pin Pin 3 Pin 2 Pin Pin # ident (optional) e Top side view Back side view b. C A.8 C F C A3 F A MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A.7.75.8.28.3.32 A. -.. -. A3.5.2.25.6.7.9 b.3.5.6.7.2.2 b.25 BSC. BSC D.9 5. 5..92.96.2 D 3.75 3.8 3.85.8.5.52 E 5.9 6. 6..232.236.2 E Option AA (for W/B) 2.62 2.67 2.72.3.5.7 E Option AB (for BWL) 2.2 2.7 2.52.95.97.99 E2.87.92.97.3.36.38 e.27 BSC.5 BSC K Option AA (for W/B).5 typ..8 typ. K Option AB (for BWL).65 typ..25 typ. K.66 typ..25 typ. L.33.3.53.3.7.2 L3.23 BSC.9 BSC z.3 BSC.3 BSC ECN: T-782-Rev. C, 22-Dec- DWG: 65 Revision: 22-Dec- Document Number: 63656 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
PAD Pattern Recommended Minimum PAD for PowerPAIR 6 x 5 2.835 (.2) 2.2 (.83).28 (.).53 (.2).5 (.8) (.57) 2.67 (.5) (, ).55 (.22).2 (.8) (.57).66 (.26).92 (.36) 2.3 (.8). (.7) 2.835 (.2).53 (.2) Pin.95 (.75).27 (.5).66 (.26).6 (.2) Dimensions in millimeters (inch) Note Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 6-Feb-5 Document Number: 678 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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