Ratings Parameter. Symbol Condition Min. Max. Storage Temperature Tstg - 20 V PD Forward Current. Cooling - V. Cooling

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1,0nm DFB DWDM FLDF7CZJ FEATURES Direct Modulation DFB Laser Builtin TEC, Thermistor and Monitor PD 14Pin Butterfly Type Module QAM Transmission Application 10mW Output Power Low Residual Chirp Selected wavelengths according to ITUT grid available APPLICATIONS This laser is intended for use in Dense Wavelength Division Multiplexed (DWDM) systems that employ Quadrature Amplitude Modulation (QAM) on Quadrate Phase Shift Keying (QPSK). Transmission spans up to 60 km are possible without ampification. DESCRIPTION This Laser is a high power laser capable of QAM transmission. It is packaged in a butterfly type module. The module employs a high efficiency optical coupling system, coupling the laser output through a builtin optical isolator into a single mode fiber pigtail. The modules also include a monitor photodiode, a thermoelectric cooler (TEC) and thermistor. This device is designed for DWDM direct modulation transmission systems. Selected wavelengths specified to the ITUT grid are available. ABSOLUTE MAXIMUM RATINGS (Tc=2 C, unless otherwise specified) Ratings Parameter Symbol Condition Min. Max. Storage Temperature Tstg 40 +70 Unit C Operating Case Temperature Top 20 +6 C Optical Output Power Pf CW 20 mw LD Forward Current IF CW 10 ma LD Reverse Voltage VR 2 V PD Reverse Voltage VDR 20 V PD Forward Current IPD 10 ma TEC Voltage Vc Cooling +2. Heating 2.0 V TEC Current Ic Cooling +1.4 Heating 0. A Thermistor Temperature Tth ATC Operation 20 +6 C Lead Soldering Time Tsold 260 C 10 sec Environmental Operating Humidity Xop Top<30 C 9 % Environmental Storage Humidity Xst Tstg<30 C 9 % Edition 1.2 July 2004 1

FLDF7CZJ 1,0nm DFB DWDM OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=Tset, Tc=2 C, BOL, unless otherwise specified) Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Laser Set Temperature Tset 20 2 3 C Threshold Current Ith CW 2 40 ma Operating Current Iop CW, Pf=10mW 70 120 ma Forward Voltage (Pin No. 3) VFDC CW, Pf=10mW 1.2 2. V Slope Efficiency S CW, Pf=10mW 0.14 0.20 mw/ma Tracking Error Pf Note (1) 0. +0. db Monitor Current Im CW, IF=Iop, VDR=V 100 300 2000 µa Monitor Dark Current ID VDR=V 0.02 0.1 µa Monitor PD Capacitance Ct VDR=V, freq =1 MHz 4 10 pf Peak Wavelength λp CW, Pf=10mW Note (2) Chirp nfm Note (3) 20 70 120 MHz/mA Linewidth (FWHM) CW, Pf=10mW 3 6 MHz Side Mode Suppression Ratio Sr CW, Pf=10mW 33 40 db 2nd Order Intermodulation Distortion IMD2 Note (4) 44 dbc 3nd Order Intermodulation Distortion IMD3 Note (4) 3 dbc Relative Intensity Noise RIN Note () 17 db/hz Input Impedance (Pin No. 12) Zin CW, Pf=10mW 2 Ω Bandwidth (1dB) fc Note (6) 2.2 GHz RF Return Loss S11 f=mhz870mhz 7 db Isolation Is 20<Tc<6 C 2 3 Note 1. Total change in Pf over 20<Tc+6 C Test Conditions: Pf=10mW at TL=Tset, Tc=2 C Constant Current Operation with TEC operating Note 2. Test Conditions: TL=Tset Part Number FLDF7CZJ21 J23 J2 J27 J29 J31 J33 J3 Wavelength (nm) 160.61 18.98 17.36 1.7 14.13 12.2 10.92 149.32 Tolerance (nm) Note 3. Test Conditions: Pf=10mW, measured at 00MHz. Note 4. Test Conditions: Pf=10mW, Optical Modulation Index OMI=3.0%/ch, 2 unmodulated carriers (f1=3.2mhz, f2=9.2mhz) 1310nm Zerodispersion singlemode fiber: 0km, Optical Reflection=40dB (excluding reflection from longhaul fiber) Measured Frequency: IMD2: f=42mhz IMD3: f=11.2mhz Note. Test Condiitons: CW, Pf=10mW, f=00mhz, Optical Reflection <40dB (No longhaul fiber is used in the measurement) Note 6. Test Condiitons: Pf=10mW, no matching network is used in the measurement nm db 2

1,0nm DFB DWDM FLDF7CZJ TEC AND THERMISTOR CHARACTERISTICS (TL=Tset, Tc=2 C, BOL, unless otherwise specified) Limit Parameter Symbol Test Conditions Unit Min. Typ. Max. TEC Capacity T Ic=1A 4 C TEC Current TEC Voltage Ic Vc TL=Tset, Pf=10mW, Tc=6 C TL=Tset, Pf=10mW, Tc=6 C 0. 1.2 2.4 A V Cooler Power PTEC TL=Tset, Pf=10mW, Tc=6 C 0.6 2.4 W Thermistor Set Resistance Rset TL=Tset 6.3 10.0 12.6 kω Thermistor B Constant B 3,270 3,40 3,630 K Fig. 1 Forward Current vs Output Power 20 2.0 Fig. 2 Laser Temperature Dependence of Wavelength (ACC) 1. Output Power, Pf (mw) 1 10 Wavelength Drift (nm) 0. 0.0 0. 1. 2.0 10 1 20 2 30 3 40 0 0 0 100 10 Laser Temperatue TLD ( C) Forward Current, If (ma) 3

FLDF7CZJ 1,0nm DFB DWDM Wavelength Drift (nm) Fig. 3 Case Temperature Dependence of Wavelength 0.0 0.04 Pf=10mW 0.03 0.02 0.01 0.00 0.01 0.02 0.03 0.04 0.0 0 40 30 20 10 0 10 20 30 40 0 60 70 T=TcTset ( C) Cooler Voltage, Vc (V) 3.0 2.0 0.0 Fig. 4 Case Temperature Dependence of TEC Performance Pf=10mW 3.0 2.0 0.0 0 40 30 20 10 0 10 20 30 40 0 60 70 T=TcTset ( C) Vc Ic Cooler Current, Ic (A) Tracking Error (%) Fig. Tracking Error Characteristics 10 Pf=10mW 0 10 1 20 0 40 30 20 10 0 10 20 30 40 0 60 70 T=TcTset ( C) Relative Response (db) Fig. 6 Frequency Response Tc=+2 C 4 3 2 1 0 1 2 3 4 10 00 1000 100 2000 200 Frequency (MHz) 4

1,0nm DFB DWDM FLDF7CZJ Fig. 7 IMD3 vs. Optical Modulation Index 30 2tone test (f1=3.2mhz, f2=9.2mhz) Fiber Dispersion 82ps/nm IMD2 (dbc) 40 0 f=42mhz 60 1 10 100 Optical Modulation Index OMI (%/ch) Fig. 8 IMD3 vs. Optical Modulation Index 40 2tone test (f1=3.2mhz, f2=9.2mhz) Fiber Dispersion 82ps/nm IMD3 (dbc) 0 60 f=11.2mhz 70 1 10 100 Optical Modulation Index OMI (%/ch)

FLDF7CZJ 1,0nm DFB DWDM CZ PACKAGE.08±0.1 PIN 7 8.2±0.0 140.±0.1 17.24±0.20 1.24±0.2 2.4±0.20.4±0. PIN 1 ø.2±0.2 8.89±0.1 12.7±0.2 1.2±0.3 ø0.9±0.1 140.1±0.0.41±0.2.08±0.1 TOP VIEW 7 6 4 3 2 1 TEC UNIT: mm 8.2±0.0 PIN 8 20.83±0.2 26.04±0.2 29.97±0.2 PIN 14 2.0±0. 4ø2.67±0.20 *L 0.4±0.1 4.1±0.20.8±0.2 10.2±0.2 8 9 10 11 12 13 14 # PIN DESIGNATIONS 1 Thermistor 2 Thermistor 3 LD Cathode 4 Power Monitor Anode Power Monitor Cathode 6 Thermoelectric Cooler (+) 7 Thermoelectric Cooler () 8 Case Ground 9 Case Ground 10 NC 11 Case Ground 12 LD Modulation () 13 Case Ground 14 NC Case Ground: LD Anode CONNECTOR * Pigtail length (L) and connector type are specified in the detail (individual) specification. For further information please contact: Eudyna Devices USA Inc. 23 Zanker Rd. San Jose, CA 91311138, U.S.A. TEL: (408) 232900 FAX: (408) 4289111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 04800 FAX: +44 (0) 1628 04888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +8223770227 FAX: +8223773921 Eudyna Devices Inc. Sales Division 1, Kanaicho, Sakaeku Yokohama, 244084, Japan TEL: +81483816 FAX: +814838170 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put this product into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. 2004 Eudyna Devices USA Inc. Printed in U.S.A. 6