NPN General Purpose Transistor Features 1) BCEO < 45 (IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) Package, marking, and Packaging specifications Part No. Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3 (1) 2.9±.2 1.9±.2.95.95 (2) (3) +.2.1 1.3 2.4±.2.95 +.2.1.45±.1 +.1 +.1.15.4.6.5 All terminals have the same dimensions ~.1.2Min. ROHM : SST3 (1) Emitter (2) Base (3) Collector Absolute maximum ratings () Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector Collector power dissipation Junction temperature Storage temperature Symbol CBO CEO EBO IC PC Tj Tstg Limits 5 45 6.1.2.35 15 65 to +15 Unit A W C C When mounted on a 7 5.6mm ceramic board. Electrical characteristics () Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff Collector-emitter saturation voltage Base-emitter saturation voltage DC transfer ratio Transition frequency BCBO BCEO BEBO ICBO CE(sat) BE(on) hfe ft Collector output capacitance Cob 5 45 6 15 5 na µa IC=5µA IC=1mA IE=5µA CB=3 CB=3, Ta=15 C.25 IC/IB=mA/.5mA.6 IC/IB=mA/5mA.58.77 CE/IC=5/mA 2 45 2 3 MHz pf, IE=2mA, f=mhz CB=, IE=, f=1mhz Emitter input capacitance Cib 8 pf EB=.5, IC=, f=1mhz Rev.A 1/5
Electrical characteristic curves The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A. ICCOLLECTOR CURRENT (ma) 8 6 4 2 1.2 1..8.6.4.2.1 IB=mA 1. 2. CECOLLECTOR-EMITTER OLTAGE () Fig.1 Grounded emitter output characteristics ( ). 8. 6. 4. 2. 35 3 25 2 15 IB=µA 1. 2. CE-COLLECTOR-EMITTER OLTAGE () Fig.2 Grounded emitter output characteristics ( ) 5 hfe-dc CURRENT GAIN CE= 1 5.1 1. Fig.3 DC gain vs. collector ( ) hfe-dc CURRENT GAIN Ta=125 C Ta=55 C.1 1. Fig.4 DC gain vs. collector ( ) Rev.A 2/5
f=hz hfe-ac CURRENT GAIN.1.1 1 Fig.5 AC gain vs. collector CE(SAT)COLLECTOR EMITTER SATURATION OLTAGE ().18.16.12.8.4 IC/IB=.1 1. Fig.6 Collector-emitter saturation voltage vs. collector BE(SAT)BASE EMITTER SATURATION OLTAGE () 1.8 1.6 1.2.8.4 IC/IB=.1 1. Fig.7 Base-emitter saturation voltage vs. collector BE(ON)BASE EMITTER OLTAGE () 1.8 1.6 1.2.8.4.1 1. Fig.8 Grounded emitter propagation characteristics IC/IB= IC/IB= 4 3 IC=1B1=1B2 ton-turn ON TIME (ns) tr-rise TIME (ns) CC=4 ts-storage TIME (ns) CE=15 1. Fig.9 Turn-on time vs. collector 1. Fig. Rise time vs. collector 1. Fig.11 Storage time vs. collector Rev.A 3/5
tf -FALL TIME (ns) CC=4 IC=1B1=1B2 1. Fig.12 Fall time vs. collector CAPACITANCE (pf) Cib Cob f=1mhz 1.5 1 5 REERSE BIAS OLTAGE () Fig.13 Input/output capacitance vs. voltage CE COLLECTOR-EMITTER OLTAGE () 5 MHz 2MHz 3MHz 4MHz 5. 4MHz 3MHz 2MHz MHz.5.5 5 Fig.14 Gain bandwidth product CURRENT GAIN-BANDWIDTH PRODUCT (MHz).5 1. 5 Fig.15 Gain bandwidth product vs. collector h PARAMETER NORMALIZED TO 1mA hie hre hoe hre CE=6 f=27hz hfe hfe 1 IC=1mA hie=7.8kω hoe hfe=28 hie hre=4.5 5 hoe=7.5µs.1.1 1 Fig.16 h parameter vs. collector ICBO-COLLECTOR CUTOFF CURRENT (A) n CB=3 1n P P 1P.1P 25 5 75 125 15 TA-AMBIENT TEMPERATURE ( C) Fig.17 Collector cutoff NF NOISE FIGURE (db) 12 8 6 4 2 IC=µA RS=kΩ k k 12dB f=hz k k f-frequency (Hz) Fig.18 Noise vs. collector.1.1 1 Fig.19 Noise characteristics ( ) Rev.A 4/5
k k 12dB f=3hz k k f=hz 12dB k k f=khz.1.1 1 Fig.2 Noise characteristics ( ).1.1 1 Fig.21 Noise characteristics ( ).1.1 1 Fig.22 Noise characteristics ( ) Rev.A 5/5
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
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