Intended audience This document is intended for design engineers who want to improve their high voltage consumer drive applications.

Similar documents
RC-D Fast : RC-Drives IGBT optimized for high switching frequency

Tire Pressure Monitoring Sensor

LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.

Power Management & Multimarket

Power Management & Multimarket

Revision: Rev

BGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.

LED Drivers for High Power LEDs

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,

Power Management & Multimarket

BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

Overvoltage at the Buck Converter Output

Revision: Rev

Power Management & Multimarket

BGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary

BGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

BGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012

Dual channel 5 A, high-speed, low-side gate driver with high negative input voltage capability and advanced reverse current robustness

BGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.

BGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

High voltage CoolMOS CE in SOT-223 package

Revision: Rev

TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

LED Drivers for High Power LEDs

Power Management & Multimarket

EiceDRIVER. High voltage gate drive IC. Application Note. AN Revision 1.3,

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

AN523. About this document. Scope and purpose

High Precision Hall Effect Switch for Consumer Applications

BGSF110GN26. Preliminary Datasheet. RF & Protection Devices

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.

High Precision Automotive Hall Effect Switch for 5V Applications

Power Management & Multimarket

Revision: Rev

About this document. Table of Contents. Application Note

BFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,

Power Management & Multimarket

BGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),

BGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.

Evaluation Board for DC Motor Control with the IFX9201. This board user manual provides a basic introduction to the hardware of the H-Bridge Kit 2Go.

About this document. 32-bit Microcontroller Series for Industrial Applications AP Application Note

BFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Power Management & Multimarket

Ultra Low Quiescent Current Linear Voltage Regulator

BFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.

BGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,

BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,

LED Driver for High Power LEDs ILD4001. Data Sheet. Industrial and Multimarket. Step down LED Controller for high power LEDs. Revision 2.

Revision: Rev

BFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

Power Management and Multimarket

For Arduino V A u t o m o t i v e P o w e r

BGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision

BFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

Revision: Rev

BFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

TVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

Power Management and Multimarket

High voltage CoolMOS P7 superjunction MOSFET in SOT-223 package

Low Dropout Linear Voltage Regulator

BGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,

Angle Sensor TLE5012BD. Data Sheet. Sense & Control. GMR-Based Dual Die Angle Sensor. Rev. 1.2,

SPDT RF CMOS Switch. Revision: Rev

BFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,

Revision: Rev

BFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

Power Management & Multimarket

TLE4997A8D Grade1. Technical Product Description. Sense & Control. Programmable Linear Dual Hall Sensor. Revision 1.0,

Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.

TVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

Analog Manifold Air Pressure Sensor IC. Analog Absolute Pressure Sensor. Revision 1.0,

Revision: Rev

Revision: Rev

BFP650. Data Sheet. RF & Protection Devices. High Linearity Low Noise SiGe:C NPN RF Transistor. Revision 1.0,

EiceDRIVER. High voltage gate driver IC. Application Note. Revision 2.0,

BFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.

TLE4922-XIN-F. 1 Product Description

BGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,

Revision: Rev

BGSA14GN10. Data Sheet. Power Management & Multimarket. Single-Pole Quad Throw Antenna Tuning Switch. Revision

Transcription:

RC-Drives, RC-Drives F ast and RC-Drives A utomotive RC-Drives IGBT for consumer and automotive applications Application Note About this document Scope and purpose This application note describes a cost-optimized discrete IGBT solution in order to address to the pricesensitive consumer drives market. Furthermore, a comparison will be made between the two technologies RC-Drives (RC-D) and RC-Drives Fast (RC-DF) IGBTs. The RC-D device is optimized for low conduction losses while the RC-DF device is optimized for low switching losses. Intended audience This document is intended for design engineers who want to improve their high voltage consumer drive applications. Table of contents 1 Introduction and short description of the product family... 2 2 Static and dynamic behavior... 4 2.1 Static behavior... 4 2.2 Dynamic behavior... 4 3 Application... 7 4 In-circuit application test on 200 W motor drive board... 9 4.1 Efficiency... 9 4.2 Thermal behavior... 10 4.3 Cooling considerations... 11 1 Revision 1.1, 2015-08-12

Introduction and short description of the product family 1 Introduction and short description of the product family The RC-Drives IGBT technology was released by Infineon at the end of 2009 as a cost-optimized solution to address the price-sensitive consumer drives market. This basic technology provides outstanding performance in BLDC motor drives adopting block commutation type of modulations, where one or both IGBT in the half-bridge are left conducting for 120 of the motor electrical angle (Dae-Woong Chung et al., IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 46, No. 3, June 1999). Due to the low conduction losses of both IGBT and integrated diode, the overall losses are drastically reduced. This type of control is commonly found in fridge compressors: by limiting the hard switching events the dv/dt and di/dt commutation slopes are avoided, therefore the harmonic content injected into the motor windings (hence the EMI) is reduced. Below we have a typical example of this type of commutation found on a 100 W commercial fridge compressor: High side Low side Figure 1 High side and low side gate signals for 120 PWM commutation switching Another application that benefits from the low on-state losses or the RC-Drives is found in domestic aircon systems: the ~1.5 kw BLDC compressor is driven by IGBTs switched by full sinusoidal PWM hard switching at moderate switching frequencies of 5 to 8 khz. Again in this case a device optimized for low conduction losses provides an overall loss reduction. However, the trend observed in low power drives for outdoor and indoor fans of domestic aircon systems as well as industrial fans and pumps up to ~200 W is to increase the PWM switching frequency. The reason is two fold: on one side the size of the output filter can be reduced by keeping the same current ripple. On the other side, in small motor drives adopting sensor-less FOC (Field Oriented Control), where a high dynamic control (torque and speed) of the PMSM motor is required, the higher switching frequency allows to increase the sampling rate of current and hence the accuracy of reconstructed rotor position. In order to meet the rising demands of the IGBTs for the low power motor drive consumer market, a new version of the RC-Drives IGBT is developed: the IGBT and diode losses are optimized to reduce the inverter Application Note 2 Revision 1.1, 2015-08-12

Introduction and short description of the product family losses at switching frequencies of 18~30 khz. The new family is called RC-DF, and released in the current classes from 2.5 A to 15 A in DPAK packages. Static and dynamic behavior of RC-D and RC Drives Automotive (RC-DA) devices are similar, therefore all characteristics for RC-D are valid also for RC-DA devices. Table 1 Product specification for RC-D and RC-DFast Part number Package type Power [W] Switching frequency VCE [V] IC [A] VCE(sat) [V] Ets [mj] tsc VF [V] Qrr [µc] 25 C 100 C 25 C 175 C 25 C 175 C [s] 25 C 175 C 25 C 175 C IKD03N60RF DPAK 40-80 4-30 khz 600 5 2.5 2.2 2.3 0.09 0.14 5 2.1 2.0 0.06 0.19 IKD04N60RF DPAK 80-150 4-30 khz 600 8 4 2.2 2.3 0.11 0.19 5 2.1 2.0 0.09 0.26 IKD06N60RF DPAK 150-250 4-30 khz 600 12 6 2.2 2.3 0.18 0.28 5 2.1 2.0 0.16 0.34 IKD10N60RF DPAK 250-600 4-30 khz 600 20 10 2.2 2.3 0.35 0.52 5 2.1 2.0 0.27 0.62 IKD15N60RF DPAK 600-1000 4-30 khz 600 30 15 2.2. 2.3 0.52 0.78 5 2.1 2.0 0.42 1.00 IKU04N60R IKD04N60R IKU06N60R IKD06N60R IKU10N60R IKD10N60R IKU15N60R IKD15N60R IPAK DPAK IPAK DPAK IPAK DPAK IPAK DPAK 80-150 DC to 5 khz 600 8 4 1.65 1.85 0.24 0.4 5 1.7 1.7 0.22 0.52 150-250 DC to 5 khz 600 12 6 1.65 1.85 0.33 0.56 5 1.7 1.7 0.37 0.80 250-600 DC to 8 khz 600 20 10 1.65 1.85 0.59 0.93 5 1.7 1.7 0.56 1.22 600-1000 DC to 8 khz 600 30 15 1.65 1.85 0.9 1.25 5 1.7 1.7 0.76 1.7 Table 2 Product specification for RC-D Automotive Part number Package type Power [W] Switching frequency VCE [V] IC [A] VCE(sat) [V] Ets [mj] tsc 25 C 100 C 25 C 175 C 25 C 175 C [s] 25 C 175 C 25 C 175 C IKD04N60RA DPAK 80-150 DC to 5 khz 600 8 4 1.65 1.85 0.24 0.4 5 1.7 1.7 0.22 0.52 IKD06N60RA DPAK 150-250 DC to 5 khz 600 12 6 1.65 1.85 0.33 0.56 5 1.7 1.7 0.37 0.8 IKD10N60RA DPAK 250-600 DC to 5 khz 600 20 10 1.65 1.85 0.59 0.93 5 1.7 1.7 0.56 1.22 IKD15N60RA DPAK 600-1000 DC to 8 khz 600 30 15 1.65 1.85 0.9 1.25 5 1.7 1.7 0.76 1.7 VF [V] Qrr [µc] Application Note 3 Revision 1.1, 2015-08-12

Ic (A) RC-Drives IGBT for consumer and automotive applications Static and dynamic behavior 2 Static and dynamic behavior 2.1 Static behavior Due to the optimization for fast switching, the V CE(sat) of the RC-DF is increased compared to the RC-D. However for the target inverter applications in the range of ~100 W the RMS currents are usually limited below 1 A and here the V CE(sat) increase is limited to ~200 mv both at 25 C and 175 C. A negative temperature co-efficient of V CE(sat) is observed in this current range, contributing to a reduction of conduction losses in normal operating conditions, with junction temperature T j typically ranging from 60 to 100 C. 4,0 V CE(sat) comparison RC-D vs RC-DF 3,5 3,0 2,5 IKD04N60R-25 C IKD04N60RF-25 C IKD04N60R-175 C IKD04N60RF-175 C RC-D RC-DF 2,0 1,5 1,0 0,5 0,0 0,00 0,50 1,00 1,50 2,00 2,50 V CE(sat) (V) Figure 2 V CE(sat) comparison of the RC-DF vs. the RC-D technology 2.2 Dynamic behavior The RC-DF maintains the smooth switching behavior and R G controllability of the basic RC-D technology, by providing drastically reduced turn-off losses of the IGBT. The internal diode is also optimized to reduce the turn-on losses. The devices are characterized in a classical half-bridge test circuit with inductive load: the low side IGBT (DUT) is commutated over the high side diode. Therefore, the diode switching improvement is visible in the IGBT turn-on behavior (see below). Application Note 4 Revision 1.1, 2015-08-12

Static and dynamic behavior Figure 3 Dynamic switching behavior as a function of external R G The turn-on and turn-off waveforms are clearly showing significantly faster switching: both the tail current of the IGBT, the Q rr, I rrm and t rr of the integrated diode are drastically reduced. Application Note 5 Revision 1.1, 2015-08-12

Static and dynamic behavior RC-D RC-DF RC-D RC-DF Figure 4 are different Dynamic switching waveforms: turn-off (top) and turn-on (bottom). Note that the current scales Application Note 6 Revision 1.1, 2015-08-12

Application 3 Application RC-D and RC-DF devices are suitable for home appliances as shown in Figure 6, especially as the power component of motor drive inverters. This is usually a two-level three-phase inverter driving a three-phase induction or permanent magnet synchronous motor. V AC U V W Figure 5 Three-phase two-level inverter Figure 6 the BLDC fan motor Commercial air-conditioning split system, showing the motor drive card housed on the back of RC-DA is a device that can be used for automotive applications such as, High Intensity Discharge (HID) lamps and piezo injection. HID lamps have two important issues, a greater starting voltage and the presence of acoustic resonance. The first issue is resolved by using a sort of starting aid, called igniters, which ignites the lamp. In order to avoid acoustic resonance and flickering, the designer must avoid the combination of power fluctuation and operating frequency. The frequency used in the application is higher than 100 Hz and Application Note 7 Revision 1.1, 2015-08-12

Application below 1 khz. Power fluctuation can be avoided by using square wave alternate current techniques. This current control can be achieved by using a full bridge that converts the DC current coming from a DC/DC converter into an AC current for the lamp. DC Bus Igniter L LAMP Shunt Figure 7 HID lamp output stage Figure 8 Automotive application: piezo injection and High Intensity Discharge(HID) lights Application Note 8 Revision 1.1, 2015-08-12

In-circuit application test on 200 W motor drive board 4 In-circuit application test on 200 W motor drive board 4.1 Efficiency In order to verify the improvement of the RC-DF in a real application conditions, the new devices were tested on a demo board developed by Infineon and used as test bench to simulate a real air-conditioning outdoor fan. The board is designed for a 200 W output and consists of an input rectifier stage, inverter stage and output filter. The IGBTs are driven by a 600 V three-phase driver IC from Infineon (6ED003L06-F), and the modulation pattern is provided by an 8 bit Infineon microcontroller (XC-878) mounted on an external card. No heat-sink is required, just thermal vias through the PCB. The control method is sensor-less FOC using a single shunt-based feedback loop. The board is driving a 200 W induction motor coupled to an adjustable DC brake, which allows controlling the output power from the inverter. The efficiency is monitored by a Siemens power meter and case temperature is monitored by an IR camera. Figure 9 Test set-up for the application measurements Already at switching frequency of 10 khz a clear efficiency improvement is observed. At the target f sw of 18 khz the RC-DF provides 2.8% improvement at 50 W input power and 1.6% at 100 W: Application Note 9 Revision 1.1, 2015-08-12

In-circuit application test on 200 W motor drive board Figure 10 Inverter efficiency as a function of input power and switching frequency 4.2 Thermal behavior The increased efficiency for the RC-DF translates in lower case temperature, as verified by thermal images with infrared camera: Figure 11 Inverter efficiency as a function of input power and switching frequency The RC-DF shows outstanding thermal performance providing lower case temperature over the entire frequency range: at the target switching frequency of 18 khz, the case temperature is lowered by 20 C. The temperature distribution is quite uniform, as demonstrated by detailed analysis of the thermal images: Application Note 10 Revision 1.1, 2015-08-12

In-circuit application test on 200 W motor drive board Figure 12 Thermal images at P in= 50 W, f sw= 20 khz This translates in increased reliability and longer life expectancy for the device, especially in the harsh thermal environments to be encountered in a real application. In the case of outdoor fan for domestic split aircon systems, for example, the board is mounted directly on the back of the motor in a close environment without airflow. In this case high ambient temperature up to ~60 C can be expected: 4.3 Cooling considerations When the power range of the inverter exceeds ~200 W, along with careful PCB design (avoid placing devices too close to each other or to the edge of the PCB), some type of cooling is required for the SMD devices. In case of DPAK packages, top side cooling is not effective due to the relatively high thickness of the mold compound on top of the chip and the poor heat exchange. Infineon recommends cooling from the bottom of the chip by thermal vias through the PCB. Several methods for vias formation are adopted in the industry: Application Note 11 Revision 1.1, 2015-08-12

In-circuit application test on 200 W motor drive board Table 3 Copper inlays Commonly adopted vias concepts Production limited and quite expensive concept. Adopted in high efficiency converter for SMPS applications Thermal vias Small drill holes Placed around the leadframe or partially under the drain contact. Typical vias diameter is 400 µm. Filled with synthetic resin to avoid solder voids at RC-Drives leadframe due to a solder reflow through the vias. Most common solution in consumer drives. Holes diameter below 0.2 mm for the thermal vias are filled during Cu galvanic deposition to avoid solder reflow.they can be placed under the drain for the most effective heat exchange. Copper inlays (Ruwel GmbH) Classical thermal vias with resin Thin-via-concept (small drill holes) Infineon recommends, when allowed by the process capability of PCB supplier, the small drill holes concept for optimum power dissipation. The concept was tested successfully on several reference designs and allowed to reach up to 1.2 kw output power utilizing RC-D devices in DPAK package. Below an example of small drill holes vias design and related heatsink mounting with isolation foil: Application Note 12 Revision 1.1, 2015-08-12

In-circuit application test on 200 W motor drive board Figure 13 Example of thermal vias and heatsink mounting for RC-D and RC-DF test boards Application Note 13 Revision 1.1, 2015-08-12

In-circuit application test on 200 W motor drive board Revision history Major changes since the last revision Page or reference Description of change Application Note 14 Revision 1.1, 2015-08-12

Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DI-POL, DrBLADE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, ISOFACE, IsoPACK, i- Wafer, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. ANSI of American National Standards Institute. AUTOSAR of AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CATiq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. HYPERTERMINAL of Hilgraeve Incorporated. MCS of Intel Corp. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave of Openwave Systems Inc. RED HAT of Red Hat, Inc. RFMD of RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2014-07-17 www.infineon.com Edition 2015-08-12 Published by Infineon Technologies AG 81726 Munich, Germany 2015 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference Legal Disclaimer THE INFORMATION GIVEN IN THIS APPLICATION NOTE (INCLUDING BUT NOT LIMITED TO CONTENTS OF REFERENCED WEBSITES) IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON- INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.