DESCRIPTION The device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for high voltage applications and is particularly useful in copy machines and solid state relays. APPLICATIONS Copy Machines Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits Solid State Relays SCHEMATIC 6 3 NC 4 PIN. ANODE. CATHODE 3. NO CONNECTION 4. EMITTER. COLLECTOR 6. BASE Parameter Symbol Value Units TOTAL DEVICE Storage Temperature T STG - to +0 C Operating Temperature T OPR - to +00 C Lead Solder Temperature T SOL 60 for 0 sec C Input-Output Isolation Voltage Peak ac Voltage, 60 Hz, Second Duration () V ISO 700 Vac(pk) Total Device Power Dissipation @ T A = C 0 P Derate above C D.94 EMITTER DC/Average Forward Input Current mw I F 60 ma Forward Current - Peak (Pulse Width = µs, 330 pps) I F (pk). A LED Power Dissipation @ T A = C 0 mw P Derate above C D.4 mw/ C DETECTOR Collector-Emitter Voltage V CEO 400 V Collector-Base Voltage V CBO 400 V Emitter-Collector Voltage V ECO 7 V Detector Power Dissipation @ T A = C 0 mw P Derate above C D.76 mw/ C 00 Fairchild Semiconductor Corporation DS30069 3//0 OF 6 www.fairchildsemi.com
ELECTRICAL CHARACTERISTICS (T A = C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ () Max Unit EMITTER Input Forward Voltage (I F = 0 ma) V F. V Reverse Leakage Current (V R = 6.0 V) I R 0 µa Capacitance (V = 0, f = MHz) C J 8 pf DETECTOR Collector-Emitter Breakdown Voltage (I C =.0 ma, R BE = M!) BV CEO 400 V Collector-Base Breakdown Voltage (I C = 00 µa) BV CBO 400 V Emitter-Base Breakdown Voltage (I E = 00 µa) BV EBO 7 V Collector-Emitter Dark Current T A = C (R BE = M!, V CE = 300 V) I CEO 00 na T A = 00 C 0 µa ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ () Max Units Output Collector Current (V CE = 0 V, I F = 0 ma, R BE = M!) I C (CTR) () (0) ma(%) Collector-Emitter Saturation Voltage (I C = 0. ma, I F = 0 ma, R BE = M!) V (SAT) 0.4 V Input-Output Isolation Voltage (3) (I I-O µa, Time = min) V ISO 300 V AC(RMS) 7300 V AC(PEAK) Isolation Resistance (3) R ISO 0! Isolation Capacitance () C ISO 0. pf Turn-On Time t ON (V CC = 0 V, I C = ma, R L = 00!) Turn-Off Time t OFF µs Notes. Alway design to the specified minimum/maximum electrical limits (where applicable).. Current Transfer Ratio (CTR) = I C /I F x 00%. 3. For this test LED pins and are common and phototransistor Pins 4, and 6 are common. www.fairchildsemi.com OF 6 3//0 DS30069
I I I GENERAL PURPOSE 6-PIN 0 CER, OUTPUT CURRENT (ma) 0 0 0. 0. 0. RBE = 06 Ω VCE = 0 V TA = C 0 0 0 IF, LED INPUT CURRENT (ma) ICER, OUTPUT CURRENT (ma) 0 0 60 RBE = 06 Ω VCE = 0 V IF = 0 ma IF = 0 ma IF = ma 40 0 0 0 40 60 80 00 TA, AMBIENT TEMPERATURE ( C) Figure. Output Current versus LED Input Current Figure. Output Current versus Temperature CER, OUTPUT CURRENT (ma) 40 0.0.0 0.0 0.0 0.00 RBE = 06 Ω TA = C IF = 0 ma IF = 0 ma IF = ma 0. 0. 0 0 00 300 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VF, FORWARD VOLTAGE (VOLTS).8.6.4. TA = C PULSE ONLY PULSE OR DC C 00 C 0 00 000 IF, LED FORWARD CURRENT (ma) Figure 4. Forward Characteristics I CBO, COLLECTOR-BASE CURRENT ( µ A) 300 40 80 0 60 0 60 IF = 0 ma IF = 0 ma IF = ma RBE = 06 Ω VCE = 0 V 40 0 0 0 40 60 80 00 TA, AMBIENT TEMPERATURE ( C) CER, DARK CURRENT (na) 000 00 0 VCE = 300 V VCE = 00 V RBE = 06 Ω VCE = 0 V 0 30 40 0 60 70 80 90 00 TA, AMBIENT TEMPERATURE ( C) Figure. Collector Base Current versus Temperature Figure 6. Dark Current versus Temperature DS30069 3//0 3 OF 6 www.fairchildsemi.com
Package Dimensions (Through Hole) Package Dimensions (Surface Mount) PIN ID. 0.30 (8.89) 0.330 (8.38) 0.70 (6.86) 0.40 (6.0) 3 PIN ID. 0.70 (6.86) 0.40 (6.0) SEATING PLANE 0.070 (.78) 0.04 (.4) 0.30 (8.89) 0.330 (8.38) 4 6 0.070 (.78) 0.04 (.4) 0.300 (7.6) 0.00 (.08) 0.3 (3.43) 0.00 (.08) 0.6 (4.8) 0.06 (0.4) 0.008 (0.0) 0.4 (3.90) 0.00 (.4) 0.0 (0.6) 0.06 (0.4) 0.00 (0.) 0.06 (0.40) 0.008 (0.0) 0 to 0.300 (7.6) 0.0 (0.6) 0.06 (0.4) 0.00 (0.) 0.00 (.4) 0.06 (0.40) 0.3 (8.00) 0.40 (0.30) MAX 0.00 (.4) Lead Coplanarity : 0.004 (0.0) MAX Package Dimensions (0.4 Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.70 (6.86) 0.40 (6.0) 0.070 (.78) 0.060 (.) SEATING PLANE 0.00 (.08) 0.3 (3.43) 0.30 (8.89) 0.330 (8.38) 0.070 (.78) 0.04 (.4) 0.4 (0.4) 0.9 (7.49) 0.00 (.4) 0.030 (0.76) 0.4 (3.90) 0.00 (.4) 0.004 (0.0) 0.06 (0.40) 0.008 (0.0) 0.0 (0.6) 0.06 (0.4) 0.00 (.4) 0.400 (0.6) 0 to www.fairchildsemi.com 4 OF 6 3//0 DS30069
ORDERING INFORMATION Option Order Entry Idenifier Description R.R Opto Plus Reliability Conditioning S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel SDL.SDL Surface Mount; Tape and reel W.W 0.4 Lead Spacing 300.300 VDE 0884 300W.300W VDE 0884, 0.4 Lead Spacing 3S.3S VDE 0884, Surface Mount 3SD.3SD VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications 4.8 ± 0.0 0.30 ± 0.0 4.0 ± 0..0 ± 0. 4.0 ± 0. Ø. ± 0.0.7 ± 0.0 3. ± 0. 7. ± 0. 6.0 ± 0.3 9. ± 0.0 0. MAX 0.30 ± 0.0 Ø.6 ± 0. User Direction of Feed DS30069 3//0 OF 6 www.fairchildsemi.com
MARKING INFORMATION V XX YY K 6 3 4 Definitions Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE 3 option See order entry table) 4 Two digit year code, e.g., 03 Two digit work week ranging from 0 to 3 6 Assembly package code Reflow Profile (Black Package, No Suffix) Temperature ( C) 300 0 00 0 00 0 C, 0 30 s C peak Time above 83 C, 60 0 sec Ramp up = 3C/sec Peak reflow temperature: C (package surface temperature) Time of temperature higher than 83 C for 60 0 seconds One time soldering reflow is recommended 0 0 0... 3 3. 4 4. Time (Minute)
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