AO78 Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO78 uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.8v, in the small SOT33 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters. It is ESD protected to KV HBM. Features V DS (V) = V I D =.A (VGS=.5V) R DS(ON) < 5mΩ(V GS =.5V) R DS(ON) < 7mΩ(V GS =.5V) R DS(ON) < 95mΩ(V GS =.8V) Top View SC7L (SOT33) Bottom View Pin D D S D G 5 G G G D 3 S S S Pin Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol Maximum DrainSource Voltage GateSource Voltage Continuous Drain Current A Pulsed Drain Current B Power Dissipation A T A =5 C T A =7 C T A =5 C T A =7 C Junction and Storage Temperature Range V DS V GS I DM P D T J, T STG ±8. I D.8 3.3.9 55 to 5 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 3 5 C/W R θja Maximum JunctiontoAmbient A SteadyState C/W Maximum JunctiontoLead C SteadyState R θjl 3 35 C/W Rev 3: April 5 www.aosmd.com Page of 5
Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5µA, V GS =V V I DSS Zero Gate Voltage Drain Current V DS =V, V GS =V T J =55 C 5 µa I GSS GateBody leakage current V DS =V, V GS =±8V ± µa V GS(th) Gate Threshold Voltage V DS =V GS I D =5µA.5..9 V I D(ON) On state drain current V GS =.5V, V DS =5V 3 A R DS(ON) V GS =.5V, I D =.A 5 mω T J =5 C 5 7 Static DrainSource OnResistance V GS =.5V, I D =.5A 5 7 mω V GS =.8V, I D =.A 7 95 mω g FS Forward Transconductance V DS =5V, I D =.A.7 S V SD Diode Forward Voltage I S =.5A,V GS =V.8 V I S Maximum BodyDiode Continuous Current. A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 7 pf C rss Reverse Transfer Capacitance pf R g Gate resistance V GS =V, V DS =V, f=mhz 7 Ω SWITCHING PARAMETERS Q g Total Gate Charge..8 nc Q gs Gate Source Charge V GS =.5V, V DS =V, I D =.A. nc Q gd Gate Drain Charge.35 nc t D(on) TurnOn DelayTime.5 ns D(on) t r TurnOn Rise Time V GS =.5V, V DS =V,.5 ns t D(off) TurnOff DelayTime R L =.7Ω, R GEN =3Ω 8. ns t f TurnOff Fall Time 5.5 ns t rr Body Diode Reverse Recovery Time I F =.A, di/dt=a/µs 3 ns Q rr Body Diode Reverse Recovery Charge I F =.A, di/dt=a/µs 3 nc A: The value of R θja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A =5 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to,, are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A =5 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: April 5 www.aosmd.com Page of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V V.5V V 3.5V 3 V DS =5V 5 5 C I D (A) 3V I D (A).5V V GS =.V 3 5.5.5.5 3 3.5.5 V DS (Volts) Fig : OnRegion Characteristics V GS (Volts) Figure : Transfer Characteristics R DS(ON) (mω) 9 8 7 5 V GS =.8V V GS =.5V V GS =.5V Normalized OnResistance... V GS =.8V I D =.A V GS =.5V I D =.5A V GS =.5V I D =.A 3 3.8 5 5 75 5 5 75 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage Temperature ( C) Figure : OnResistance vs. Junction Temperature 9.E 8 I D =.A.E R DS(ON) (mω) 7 5 5 5 I S (A).E.E3.E.E5 5 C 5 C 3 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage.E...8. V SD (Volts) Figure : BodyDiode Characteristics Rev 3: April 5 www.aosmd.com Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V DS =V I D =.A 5 C iss V GS (Volts) 3 Capacitance (pf) 5 C oss C rss..5..5. Q g (nc) Figure 7: GateCharge Characteristics 5 5 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps).... T J(Max) =5 C, T A =5 C R DS(ON) limited s s ms ms.s DC µs µs Power (W) 8 T J(Max) =5 C.. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.,., single pulse P D T on T Single Pulse...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance Rev 3: April 5 www.aosmd.com Page of 5
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive Switching Test Circuit & W aveform s RL Rg 9% % td(on) t r t d(off) t f t on t off Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev 3: April 5 www.aosmd.com Page 5 of 5