Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @ =-.5V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) () G Pin Description S G S G D D D D Top View of SOP-8 (8) (7) D D (4) G (6) D (5) D Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information S S () (3) SMCS SMCS K : XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter Channel Channel Unit Common Ratings (T A =5 C Unless Otherwise Noted) V DSS Drain-Source Voltage - S Gate-Source Voltage ± ± Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 I S Diode Continuous Forward Current T A =5 C.8 -. I D Continuous Drain Current T A =5 C 9.5-6 I DM a P D R qja Pulsed Drain Current T A =5 C 3 - Power Dissipation Thermal Resistance-Junction to Ambient T A =5 C T A =7 C.3.3 t s 45 45 Steady State 6.5 6.5 R q JL Thermal Resistance-Junction to Lead Steady State b I AS Avalanche Current, Single pulse (L=.mH) 6-5 A E AS b Avalanche Energy, Single pulse (L=.mH) mj Note a:pulse width limited by max. junction temperature. Note b:uis tested and pulse width limited by maximum junction temperature 5 o C (initial temperature Tj=5 o C). V C A W C/W
Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Test Conditions Channel Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage =V, I DS =5mA - - V I DSS V DS =6V, =V - - Zero Gate Voltage Drain Current ma =85 C - - 3 (th) Gate Threshold Voltage V DS =, I DS =5mA.5.7. V I GSS Gate Leakage Current =±V, V DS =V - - ± na R DS(ON) =4.5V, I DS =9A - 4 Drain-Source On-state Resistance mw =.5V, I DS =6A - 3.5 8 Diode Characteristics V SD Diode Forward Voltage I SD =.5A, =V -.67. V t rr Reverse Recovery Time -.8 - ns I DS =6A, dl SD /dt=a/ms Q rr Reverse Recovery Charge - 3.6 - nc Dynamic Characteristics R G Gate Resistance =V,V DS =V,F=MHz -.7 - W C iss Input Capacitance =V, - 795 - C oss Output Capacitance V DS =V, - 6 - pf C rss Reverse Transfer Capacitance Frequency=.MHz - 8 - t d(on) Turn-on Delay Time -. 9 t V DD =V, R L r Turn-on Rise Time =W, - 6. 3 I DS =A, V GEN =4.5V, t d(off) Turn-off Delay Time R G =W - 6.6 3 ns t f Turn-off Fall Time - 3.6 7 Gate Charge Characteristics Q g Total Gate Charge - 8.7 - Q gs Gate-Source Charge V DS =V, =4.5V, -.5 - nc Q gd Gate-Drain Charge I DS =6A - 3 - Q gth Threshold Gate Charge -.54-3
Electrical Characteristics (Cont.) (T A = 5 C unless otherwise noted) Channel Symbol Parameter Test Conditions Unit Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown Voltage =V, I DS =-5μA - - - V I DSS V DS =-6V, =V - - - ma Zero Gate Voltage Drain Current =85 C - - -3 ua (th) Gate Threshold Voltage V DS =, I DS =-5mA -.5 -.7 - V I GSS Gate Leakage Current =±V, V DS =V - - ± na R DS(ON) Drain-Source On-state Resistance =-4.5V, I DS =-6A - 36 45 =-.5V, I DS =-4A - 5 65 mw Diode Characteristics V SD Diode Forward Voltage I SD =-.A, =V - -.7 - V t rr Reverse Recovery Time - - ns I sd =-6A, dl SD /dt=a/ms Q rr Reverse Recovery Charge - 4.5 - nc Dynamic Characteristics R G Gate Resistance =V,V DS =V,F=MHz - 3.5 - W C iss Input Capacitance =V, - 59 - C oss Output Capacitance V DS =-V, - - pf C rss Reverse Transfer Capacitance Frequency=.MHz - 9 - t d(on) Turn-on Delay Time - 8.4 6 t r Turn-on Rise Time V DD =-V, R L =W, I DS =-A, V GEN =-4.5V, - 4. 6 t d(off) Turn-off Delay Time R G =W - 6 3 ns t f Turn-off Fall Time -.7 Gate Charge Characteristics Q g Total Gate Charge - 7.68 - Q gs Gate-Source Charge V DS =-V, =-4.5V, -.66 - nc Q gd Gate-Drain Charge I DS =-6A -.7 - Q gth Threshold Gate Charge -.3-4
N Channel Typical Operating Characteristics Power Dissipation Drain Current.4. 8 P tot - Power (W).6..8 I D 6 4.4 T A =5 o C. 4 6 8 4 6 T A =5 o C,V G =4.5V 4 6 8 4 6 - Junction Temperature ( C) - Junction Temperature ( C) I D Safe Operation Area Rds(on) Limit 3ms ms ms ms s. DC T A =5 o C... V DS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance. Thermal Transient Impedance...5.. Duty =.5 Single Pulse Mounted on in pad R qja : 45 o C/W. E-4 E-3.. 6 Square Wave Pulse Duration (sec) 5
N Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 3 5 =,3,4,5,6,7,8,9,V 8 I D 5 5.5V R DS(ON) - On - Resistance (W) 6 4 8 =.5V =4.5V..5..5..5 3. V DS - Drain-Source Voltage (V) 6 5 5 5 3 I D Transfer Characteristics Gate Threshold Voltage 5 I DS =9A.6 I DS =5mA RDS(ON) - On - Resistance (mw) 4 3 Normalized Threshold Voltage.4...8.6.4 3 4 5 6 7 8 9 - Gate - Source Voltage (V). -5-5 5 5 75 5 5 - Junction Temperature ( C) 6
N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward..8 = 4.5V I DS = 9A 3 Normalized On Resistance.6.4...8.6 I S - Source Current (A) T j =5 o C T j =5 o C.4 R ON @T j =5 o C: mw. -5-5 5 5 75 5 5....4.6.8...4 - Junction Temperature ( C) V SD - Source - Drain Voltage (V) Capacitance Gate Charge 5 Frequency=MHz 9 V DS =V I DS =6A C - Capacitance (pf) 9 75 6 45 3 5 Crss Coss Ciss - Gate - source Voltage (V) 8 7 6 5 4 3 4 8 6 V DS - Drain - Source Voltage (V) 4 8 6 Q G - Gate Charge (nc) 7
N Channel Typical Operating Characteristics (Cont.) Transfer Characteristics =-55 o C I D I D 5 5 =5 o C =5 o C..5..5..5 3. - Gate-Source Voltage (V) 8
P Channel Typical Operating Characteristics Power Dissipation Drain Current.4 7. 6 P tot - Power (W).6..8 -I D 5 4 3.4 T A =5 o C. 4 6 8 4 6 T A =5 o C,V G =-4.5V 4 6 8 4 6 - Junction Temperature ( C) - Junction Temperature ( C) -I D Safe Operation Area Rds(on) Limit 3ms ms ms ms s. DC T A =5 o C... -V DS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance. Thermal Transient Impedance...5 Single Pulse.. Duty =.5 Mounted on in pad R qja : 45 o C/W. E-4 E-3.. 6 Square Wave Pulse Duration (sec) 9
P Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 9 -I D 8 6 4 8 6 4 =-.5,-3,-4,-5,-6, -7,-8,-9,-V -V -.5V R DS(ON) - On - Resistance (W) 8 7 6 5 4 3 =-.5V =-4.5V..5..5..5 3. -V DS - Drain - Source Voltage (V) 4 8 6 -I D Transfer Characteristics Gate Threshold Voltage 4 I DS =-6A.6 I DS = -5mA.4 RDS(ON) - On - Resistance (mw) 8 6 4 Normalized Threshold Voltage...8.6.4 3 4 5 6 7 8 9. -5-5 5 5 75 5 5 - - Gate - Source Voltage (V) - Junction Temperature ( C)
P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = -4.5V I DS = -6A Normalized On Resistance.4...8 -I S - Source Current (A) T j =5 o C T j =5 o C.6 R ON @T j =5 o C: 36mW.4-5 -5 5 5 75 5 5...3.6.9..5 - Junction Temperature ( C) -V SD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 9 8 7 6 5 4 3 Crss Frequency=MHz Ciss Coss - - Gate - source Voltage (V) 9 8 7 6 5 4 3 V DS =-V I DS =-6A 4 8 6 -V DS - Drain - Source Voltage (V) 4 8 6 Q G - Gate Charge (nc)
P Channel Typical Operating Characteristics (Cont.) Transfer Characteristics 8 T j =-55 o C -I D 6 4 T j =5 o C T j =5 o C..5..5..5 3. 3.5 - - Gate-Source Voltage (V)
Avalanche Test Circuit and Waveforms N Channel DUT VDS L tp VDSX(SUS) VDS RG VDD IAS tp IL.W VDD EAS tav P Channel VDS L tav DUT EAS RG VDD VDD tp IAS IL.W tp VDSX(SUS) VDS Switching Time Test Circuit and Waveforms N Channel DUT VDS RD VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf P Channel RG VGS DUT VDS RD VDD VGS % td(on) tr td(off) tf tp 9% VDS 3
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Classification Profile 5
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6- seconds 5 C C 6- seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 6-5 seconds 7 C 6-5 seconds See Classification Temp in table See Classification Temp in table ** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 5 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <.5 mm 35 C C.5 mm C C Package Thickness Volume mm 3 <35 Volume mm 3 35- Volume mm 3 > <.6 mm 6 C 6 C 6 C.6 mm.5 mm 6 C 5 C 45 C.5 mm 5 C 45 C 45 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-, B 5 Sec, 45 C HTRB JESD-, A8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-, A8 Hrs, % of VGS max @ Tjmax PCESD-, A 68 Hrs, %RH, atm, C TCESD-, A4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-563588 Fax: 886-3-56358 6