UNISONIC TECHNOLOGIES CO., LTD PCHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT632 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT632 is ideal for thin application environments, such as portable electronics and PCMCIA cards. FEATURES * ExtremelyLow OnResistance * Fast Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing UT632LAE2R UT632GAE2R SOT233 G S D Tape Reel UT632LAE3R UT632GAE3R SOT23 G S D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING 632 L: Lead Free G: Halogen Free 1 of 5 Copyright 215 Unisonic Technologies Co., Ltd
ABSOLUTE MAXIMUM RATINGS (T J = 25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT DrainSource Voltage V DSS 2 V GateSource Voltage S ±12 V Continuous Drain Current ( =4.5V, T A =25 C) I D.78 A Pulsed Drain Current (Note 2) I DM 4.9 A Peak Diode Recovery dv/dt (Note 3) dv/dt 5. V/nS Power Dissipation (T A =25 C) 54 mw P D Linear Derating Factor above 25 C 4.3 mw / C Junction Temperature T J 15 C Storage Temperature T STG 55 ~ 15 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. I SD.61A, di/dt 76A/µs, V DD V (BR)DSS, T J =15 C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 23 C/W Note: Surface Mounted on FR4 Board, t 5sec. ELECTRICAL CHARACTERISTICS (T J = 25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS DrainSource Breakdown Voltage BV DSS = V, I D =25 µa 2 V DrainSource Leakage Current I DSS V DS =16V, =V 1. µa GateSource Leakage Current I GSS =±12 V, V DS = V ±1 na DrainSource Breakdown Voltage BV DSS / T J I D =1mA, Reference to 25 C 4.9 mv/ C ON CHARACTERISTICS Gate Threshold Voltage (TH) V DS =, I D =25µA.7 1.5 V Static DrainSource OnResistance R DS(ON) =4.5V, I D =.61A (Note 2).6 Ω =2.7V, I D =.31A (Note 2).9 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 97 pf Reverse Transfer Capacitance C RSS 28 pf Output Capacitance C OSS V DS=15V, =V, f=1.mhz 53 pf SWITCHING PARAMETERS Total Gate Charge Q G 2.4 3.6 nc =4.5V, V DS =16V Gate Source Charge Q GS.56.84 nc I D =.61A (Note 1, 2) Gate Drain Charge Q GD 1. 1.5 nc TurnON Delay Time t D(ON) 13 ns TurnON Rise Time t R V DD =1V, I D =.61A, 18 ns TurnOFF Delay Time t D(OFF) R G =6.2Ω, R D =16Ω (Note 1, 2) 22 ns TurnOFF FallTime t F 22 ns SOURCEDRAIN DIODE RATINGS AND CHARACTERISTICS DrainSource Diode Forward Voltage V SD I S =.61A, =V 1.2 V Maximum Continuous DrainSource Diode Forward Current I S.54 A Maximum Pulsed DrainSource Diode Forward Current (Note 1) I SM 4.9 A Reverse Recovery Time t rr T J =25 C,I F =.61A, 35 53 ns Reverse Recovery Charge Q RR di/dt=1a/µs (Note 2) 26 39 nc Notes: 1. Repetitive Rating; Pulse width limited by T J(MAX). 2. Pulse Width 3μs, Duty Cycle 2%. UNISONIC TECHNOLOGIES CO., LTD 2 of 5
TEST CIRCUITS AND WAVEFORMS D.U.T. (3) Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer (2) (4) (1) (Note 2) (Note 1) R G dv/dt controlled by R G I SD controlled by Duty Factor D D.U.T. Device Under Test V DD (Note 1) Peak Diode Recovery dv/dt Test Circuit (1) Driver Gate Drive Period P.W. P.W. D= Period =1V (Note 3) (2) D.U.T. ISD Waveform Reverse Recovery Current (3) D.U.T. V DS Waveform Body Diode Forward Current di/dt Body Recovery dv/dt V DD ReApplied Voltage (4) Inductor Current Body Diode Forward Drop Ripple 5 I SD Peak Diode Recovery dv/dt Waveforms Notes: 1. Reverse Polarity for PChannel 2. Use PChannel Driver for PChannel Measurements 3. =5.V for Logic Level and 3V Drive Devices UNISONIC TECHNOLOGIES CO., LTD 3 of 5
TEST CIRCUITS AND WAVEFORMS(Cont.) Current Regulator Same Type as D.U.T. 5kΩ 12V.2µF.3µF D.U.T. V DS 4.5V Q GS Q G Q GD V G 3mA I G I D Current Sampling Resistors Charge Gate Charge Test Circuit Gate Charge Waveforms V DS 9% 1% t d(on) t R t d(off) t F Switching Time Test Circuit Switching Time Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 5
TYPICAL CHARACTERISTICS 3 Drain Current vs. DrainSource Breakdown Voltage 3 Drain Current vs. Gate Threshold Voltage 25 25 2 15 2 15 1 1 5 5 1 2 3 4 5 DrainSource Breakdown Voltage, BV DSS (V) 2 4 6 8 1 12 Gate Threshold Voltage, V TH (V) Drain Current, ID (ma) Drain Current, ID (ma) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 5 of 5