UNISONIC TECHNOLOGIES CO., LTD UT4422

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Transcription:

UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * R DS(ON) < 15 mω @ V GS =1V, I D =11A R DS(ON) < 24 mω @ V GS =4.5 V, I D =1 A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment 1 2 3 4 5 6 7 8 Packing UT4422G-S8-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING 1 of 6 Copyright 216 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (T A =25 C) (Note 1) I D 11 A Pulsed Drain Current I DM 5 A Power Dissipation (T C =25 C) P D 3 W Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by T J(MAX) THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 59 ~ 75 C/W Junction to Case θ JC 16 ~ 24 C/W ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = V, I D =25 µa 3 V Drain-Source Leakage Current I DSS V DS =24 V, V GS = V.3 1 µa Gate-Body Leakage Current I GSS V DS = V, V GS = ±2 V 1 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =25 µa 1 1.8 3 V On State Drain Current I D(ON) V DS =5V, V GS =4.5 V 4 A Static Drain-Source On-Resistance R DS(ON) V GS =1V, I D =11A 12.6 15 mω V GS =4.5V, I D =1A 19.6 24 mω DYNAMIC PARAMETERS Input Capacitance C ISS 8 14 125 pf Output Capacitance C OSS V DS =15V, V GS =V, f=1mhz 14 18 22 pf Reverse Transfer Capacitance C RSS 8 11 14 pf SWITCHING PARAMETERS Total Gate Charge Q G 15 19.8 24 nc Gate Source Charge Q GS V DS =15V, V GS =1V, I D =11A 2.5 nc Gate Drain Charge Q GD 3.5 nc Turn-ON Delay Time t D(ON) 4.5 6.5 ns Turn-ON Rise Time t R V GS =1V,V DS =15V,R L =1.35Ω, 3.9 5.5 ns Turn-OFF Delay Time t D(OFF) R GEN =3Ω 17.4 25 ns Turn-OFF Fall-Time t F 3.2 5 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD I S =1A,V GS =V.75 1 V Maximum Body-Diode Continuous Current I S 4.3 A Body Diode Reverse Recovery Time t RR 17.5 21 ns Body Diode Reverse Recovery I F =11 A, di/dt=1a/μs Q RR Charge 9.3 12 nc UNISONIC TECHNOLOGIES CO., LTD 2 of 5

TYPICAL CHARACTERISTICS Drain to Source On-Resistance, RDS(ON) (mω) Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mω) Drain Current,ID (A) Drain Current,ID (A) 6 5 4 3 2 On-Resistance vs. Gate-Source Voltage 25 С 125 С I D =1A Pulse width 8μs, duty cycle.5%. 1 2 4 6 8 1 Gate to Source Voltage,V GS (V) Reverse Drain Current,IS (A) 1.E+1 1.E+ 1.E-1 1.E-2 1.E-3 Body-Diode Characteristics 125 С 25 С 1.E-4 Pulse width 8μs, duty cycle.5%. 1.E-5..2.4.6.8 1. Body Diode Forward Voltage,V SD (V) UNISONIC TECHNOLOGIES CO., LTD 3 of 5

TYPICAL CHARACTERISTICS(Cont.) 1 8 V DS =15V I D =11A Gate-Charge Characteristics 15 125 Capacitance Characteristics C ISS 6 1 75 4 5 2 25 C OSS 4 8 12 16 2 Gate Charge,Q G (nc) C RSS 5 1 15 2 25 Drain to Source Voltage,V DS (V) 3 1. 1. 1. Maximum Forward Biased Safe Operating Area R DS(ON) Limited 1ms 1ms.1s 1s 1s 1μs 1μs 5 4 3 2 Single Pulse Power Rating Junction-to-Ambient T J(Max) =15 С T A =25 С DC T J(Max) =15 С T A =25 С.1.1 1 1 1 Drain to Source Voltage,V DS (V) 1.1.1.1 1 1 1 1 Pulse Width (s) Normalized Transient Thermal Resistance,ZθJA 1 1.1 D=T ON /T T J,PK =T A +P DM.Z θja.θ JA θ JA =4 С/W Single Pulse Normalized Maximum Transient Thermal Impedance In descending order D=.5,.3,.1,.5,.2,.1,single pulse P DM T O N T.1.1.1.1.1.1 1 1 1 1 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD 4 of 5

TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5