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P-Channel Enhancement Mode Power MOSFET

12N60 12N65 Power MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET

8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Transcription:

UNISONIC TECHNOLOGIES CO., LTD DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4822 can provide excellent R DS(ON) and low gate charge by using advanced trench technology. The UT4822 is suitable for using as a load switch or in PWM applications. FEATURES * 3V/8.5A * Low R DS(ON) * Reliable and Rugged SYMBOL (7) (8) D1 (5) (6) D2 1 SOP-8 (2) G1 (4) G2 S1 (1) S2 (3) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 UT4822L-S8-R UT4822G-S8-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel UT4822L-K8-56-R UT4822G-K8-56-R S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING SOP-8 1 of 6 Copyright 18 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATINGS (T A = 25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DS 3 V Gate-Source Voltage V GS ± V Continuous Drain Current I D 8.5 A Pulsed Drain Current I DM 4 A Power Dissipation SOP-8 2 W P D 2.7 W Junction Temperature T J +15 С Storage Temperature T STG -55 ~ +15 С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by T J(MAX) THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOP-8 1 С/W Junction to Ambient θ JA 46 С/W ELECTRICAL CHARACTERISTICS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =V, I D =25uA 3 V Drain-Source Leakage Current I DSS V DS =24V, V GS =V 1 ua Gate-Source Leakage Current I GSS V DS =V, V GS =±V ± na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =25uA 1 1.8 3 V Drain-Source On-State Resistance R DS(ON) V GS =V, I D =8.5A 16 19 mω V GS =4.5V, I D =6.A 21 26 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 4 125 pf Output Capacitance C OSS V GS =V,V DS =15V,f=1.MHz 18 pf Reverse Transfer Capacitance C RSS 1 pf SWITCHING CHARACTERISTICS Total Gate Charge Q G 19.2 23 nc Gate-Source Charge Q GS V DS =15V, V GS =V, I D =8.5A 2.6 nc Gate-Drain Charge Q GD 4.2 nc Turn-ON Delay Time t D(ON) 5.2 7.5 ns Turn-ON Rise Time t R V DD =15V, V GS =V, R G =3Ω, 4.4 6.5 ns Turn-OFF Delay Time t D(OFF) R L =1.8Ω 17.3 25 ns Turn-OFF Fall Time t F 3.3 5 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current I S 3 A Drain-Source Diode Forward Voltage V SD I S =1A, V GS =V.76 1 V Reverse Recovery Time t rr I F = 8.5A, di F /dt = A/μs 16.7 21 ns Reverse Recovery Charge Q rr 6.7 nc UNISONIC TECHNOLOGIES CO., LTD 2 of 5

TYPICAL CHARACTERISTICS 3 25 15 On-Resistance Characteristics 4V V 4.5V 3.5V V GS =3V 5 1 2 3 4 5 Drain Source Voltage, V DS (V) 2.E+1 1.6E+1 1.E+1 8.E+ 4.E+ Transfer Characteristics V DS =5V 25 С.E+ 1.5 2 2.5 3 3.5 4 Gate Source Voltage, V GS (V) 5 On-Resistance vs. Gate-Source Voltage 1.E+1 Body-Diode Characteristics On-Resistance, RDS(ON) (mω) Gate Source Voltage, VGS (V) 4 3 I D =8.5A 25 С 2 4 6 8 Gate Source Voltage, V GS (V) 8 6 4 2 Gate-Charge Characteristics V DS =15V I D =8.5A 4 8 12 16 Gate Charge, Q G (nc) Source Current, IS (A) 1.E+ 1.E-1 1.E-2 1.E-3 25 С 1.E-4 1.E-5..2.4.6.8 1. Source Drain Voltage, V SD (V) Capacitance (pf) 15 125 75 5 25 C RSS Capacitance Characteristics C OSS C ISS 5 15 25 3 Drain Source Voltage, V DS (V) UNISONIC TECHNOLOGIES CO., LTD 3 of 5

TYPICAL CHARACTERISTICS (Cont.) Normalized Transient Thermal Resistance,θJA Power (W) 1.1 D=T ON /T T J,PK =T A +P DM.θ JA.θ JA θ JA =62.5 С/W Normalized Maximum Transient Thermal Impedance In descending order D=.5,.3,.1,.5,.2,.1,single pulse Single Pulse.1.1.1.1.1.1 1 Pulse Width (s) P DM T ON T 26 On-Resistance vs. Drain Current and Gate Voltage 24 22 V GS =4.5V 18 16 V GS =V 14 12 5 15 Drain Current, I D (A) UNISONIC TECHNOLOGIES CO., LTD 4 of 5

TYPICAL CHARACTERISTICS (Cont.) Drain Current, ID (µa) Drain Current, IDSS (µa) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 5 of 5