TGM2635-CP X-Band 100 W GaN Power Amplifier

Similar documents
TGM2635-CP X-Band 100 W GaN Power Amplifier

TGA2612-SM 6 12 GHz GaN LNA

QPA GHz 50 Watt GaN Amplifier

TGA2625-CP GHz 20 W GaN Power Amplifier

TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier

QPA GHz 50 Watt GaN Amplifier

QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

TGA2818-SM S-Band 30 W GaN Power Amplifier

TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier

TGS SM GHz High Power SPDT Reflective Switch

TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier

QPA GHz GaAs Low Noise Amplifier

QPA1003P 1 8 GHz 10 W GaN Power Amplifier

TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier

TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier

TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

TGA FL 2.5 to 6 GHz 40W GaN Power Amplifier

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPA1019S GHz 10W GaN Power Amplifier

TGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

QPF GHz 1W GaN Front End Module

QPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGL2226-SM GHz 6-Bit Digital Attenuator

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.

QPA GHz Variable Gain Driver Amplifier

TGA2567-SM 2 20 GHz LNA Amplifier

QPD0210TR7. 2x15 W, 48 V, GHz, Dual GaN RF Transistor. Product Overview. Applications. Functional Block Diagram. Ordering Information

QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information

QPM GHz Multi-Chip T/R Module

QPC GHz 6-Bit Digital Phase Shifter

TGA3504-SM 2-30 GHz GaAs Wideband Gain Block

QPF GHz GaN Front End Module

TGA3503-SM 2-30 GHz GaAs Wideband Gain Block

QPL9065SR. Ultra Low-Noise 2-Stage Bypass LNA. Product Description. Product Features. Applications. Functional Block Diagram. Ordering Information

TGA FL 2.5 to 6GHz 40W GaN Power Amplifier

QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier

QPD1019S2. 500W, 50V, GHz, GaN RF IMFET. Product Overview. Key Features. Functional Block Diagram. Applications.

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty

QPL9096 Ultra Low-Noise, Bypass LNA

TQP MHz Power Amplifier. General Description. Product Features. Functional Block Diagram. Ordering Information

QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information

T1G FL 45W, 32V, DC 3.5 GHz, GaN RF Transistor

TGF2929-FL 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor

TGA4533-SM K-Band Power Amplifier

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.

QPD W, 48 V GHz GaN RF Power Transistor

TQP3M9008 High Linearity LNA Gain Block

TGA2710-SM 8W GHz Power Amplifier

TGL GHz Voltage Variable Attenuator

QPC GHz Phase Shifter with Integrated SPDT

QPA4501SR. 3 W, 28 V, GHz GaN PA Module. Product Overview. Key Features. Functional Block Diagram Applications. Ordering Information

TGA FL 20W Ku-Band GaN Power Amplifier

TQP3M9028 High Linearity LNA Gain Block

QPB9325SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TQP9113* 1 W Linear Amplifier. General Description. Product Features. Applications. Functional Block Diagram. Ordering Information

TGL2226-SM GHz 6-Bit Attenuator

Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier

TGA2704-SM 8W 9-11 GHz Power Amplifier

QPQ1907SR. 2.4GHz Wi-Fi/BT/LTE Co-Existence BAW Filter. Product Description. Functional Block Diagram. Feature Overview.

TGA Gb/s Linear Driver

RFSW1012SR. Broadband SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Ordering Information

TGA4852 DC 35GHz Wideband Amplifier

TQP DC 6 GHz Gain Block

QPB9318 Dual-Channel Switch LNA Module

T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor

QPD W, 50V, GHz, GaN RF IMFET

QPQ1237TR7. LTE B3/B7 BAW Diplexer (75MHz/70MHz) Product Overview. Key Features. Functional Block Diagram. Applications.

TGM2543-SM 4-20 GHz Limiter/LNA

TGA2760-SM GHz Power Amplifier

QPC3223TR7. 50 MHz to 6000 MHz Digital Step Attenuator. Product Description. Product Features. Functional Block Diagram.

QPB3311SR. 15 db Return Path Amplifier MHz. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPB9324SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

T2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor

TGF Watt Discrete Power GaN on SiC HEMT

QPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.

TGF Watt Discrete Power GaN on SiC HEMT

TGF Watt Discrete Power GaN on SiC HEMT

TQP9309SR. High Efficiency 0.5W Small Cell Power Amplifier. General Description. Product Features. Functional Block Diagram.

QPC6054SR. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

TQL9065 Ultra Low Noise 2-Stage Bypass LNA

QPD1025L. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info

TGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)

TGA4532 K-Band Power Amplifier

QPD W, 32V, DC 12 GHz, GaN RF Transistor

QPD1025. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info

QPA W, 28 V, GHz GaN PA Module

T1G Q3 DC 6 GHz 18 W GaN RF Power Transistor

TAT Ω 5V MHz RF Amplifier

QPA W, 28 V, GHz GaN PA Module

Absolute Maximum Ratings Parameter Rating Unit Voltage 6.0 V Maximum input power (0.6 GHz to 2.5 GHz), RF1, RF2 +28 dbm Operating temperature -30 to +

RFSA3413TR13. 5 MHz to 6000 MHz Digial Step Attenuator. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

Transcription:

Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of saturated output power with 22.5 db of large signal gain and greater than 35 % power added efficiency. The is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The is ideally suited for both commercial and military X-Band radar systems, satellite communications systems, and data links. Lead-free and RoHS compliant. Key Features Frequency Range: 7.9 11 GHz PSAT: > 50 dbm (PIN = 28 dbm) PAE: > 35% (PIN = 28 dbm) Large Signal Gain: > 22 db (PIN = 28 dbm) Small Signal Gain: > 26 db Bias: VD = 28 V, IDQ = 1.3 A, VG = -2.6 V Typical Package Dimensions: 19.05 x 19.05 x 4.52 mm Performance Under Pulsed Operation Functional Block Diagram Applications X-band Radar Satellite Communications Data Links Top View Ordering Information Part Description X-band 100 W GaN Power Amplifier Data Sheet Rev. E, September 2018 1 of 14 www.qorvo.com

Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Rating 40 V -8 to -0 V 16 A Gate Current (IG) at TCH = 200 C -52 / 124 ma Power Dissipation (PDISS), 85 C, Pulsed; PW = 100 us, DC = 10% 316 W Input Power (PIN), 50 Ω, 85 C, VD = 28 V, Pulsed; PW = 100 us, DC = 10% 33 dbm Input Power (PIN), 85 C, VSWR 3:1, VD = 28 V, Pulsed; PW = 100 us, DC = 10% 33 dbm Mounting Temperature (30 seconds) 260 C Storage Temperature -55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (VD) 28 V Drain Current (IDQ, total) 1.3 A Gate Voltage (VG) -2.6 V Operating Temperature Range 40 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Conditions (1) Min Typ Max Units Frequency Range 7.9 11.0 GHz Output Power Power Added Efficiency PIN = 28 dbm, Pulsed 8 GHz 9 GHz 10 GHz 11 GHz PIN = 28 dbm, Pulsed 8 GHz 9 GHz 10 GHz 11 GHz Power Gain PIN = 28 dbm, Pulsed 23 db Output Power Temperature Coefficient 50.0 50.0 49.5 49.5 37 33 35 33 51.0 51.0 51.0 51.0 41 41 41 41 dbm Temp: 25 C to 85 C, PIN = 28 dbm) 0.010 db/ C Input Return Loss 12 db Output Return Loss 12 db Small Signal Gain 26 db Recommended Operating Voltage 20 28 30 V Notes: 1. Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 1.3 A, VG = -2.6 V typical, PW = 100 us, Duty Cycle = 10% % Data Sheet Rev. E, September 2018 2 of 14 www.qorvo.com

Performance Plots Large Signal (Pulsed) Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10% Data Sheet Rev. E, September 2018 3 of 14 www.qorvo.com

Performance Plots Large Signal (Pulsed) Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10% Data Sheet Rev. E, September 2018 4 of 14 www.qorvo.com

Gate Current (ma) Performance Plots Large Signal (Pulsed) Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10% 1.0 0.8 Gate Current vs. Input Power vs. Freq. V D = 28 V, I DQ = 1.3 A, Temp. = 25 C 0.6 0.4 0.2 0.0-0.2 8.0 GHz 9.5 GHz 11.0 GHz -0.4 14 16 18 20 22 24 26 28 30 Input Power (dbm) Data Sheet Rev. E, September 2018 5 of 14 www.qorvo.com

Performance Plots Large Signal (Pulsed) Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 1.3 A, PW = 100 us, Duty Cycle = 10% Data Sheet Rev. E, September 2018 6 of 14 www.qorvo.com

Performance Plots Small Signal (CW) Test conditions unless otherwise noted: 25 C, VD = 28 V Data Sheet Rev. E, September 2018 7 of 14 www.qorvo.com

Performance Plots Small Signal (CW) Test conditions unless otherwise noted: 25 C, VD = 28 V Data Sheet Rev. E, September 2018 8 of 14 www.qorvo.com

Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBase = 85 C 0.30 ºC/W Channel Temperature, TCH (No RF drive) VD = 28 V, IDQ = 1.3 A PDISS = 36.4 W 96 C Thermal Resistance (θjc) (1) TBase = 85 C, VD = 28 V, IDQ = 1.3 A, Freq = 9.0 GHz, 0.33 ºC/W Channel Temperature, TCH (Under RF) ID_Drive = 11 A, PIN = 28 dbm, POUT = 50.0 dbm, PDISS = 173 W, PW = 100 us, DC = 10% 142 C Thermal Resistance (θjc) (1) TBase = 85 C, VD = 28 V, IDQ = 1.3 A, Freq = 9.0 GHz, 0.34 ºC/W Channel Temperature, TCH (Under RF) ID_Drive = 12 A, PIN = 31 dbm, POUT = 50.5 dbm, PDISS = 195 W, PW = 100 us, DC = 10% 150 C Notes: 1. Thermal resistance measured at back of package. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Power Dissipation Data Sheet Rev. E, September 2018 9 of 14 www.qorvo.com

Evaluation Board (EVB) and Application Circuit Notes: 1. See Evaluation Board PCB Information for material and stack up. 2. Part requires biasing from both sides of the EVB. Bill of Material Ref. Des. Value Description Manuf. Part Number n/a n/a Printed Circuit Board Qorvo U1 n/a Qorvo C3, C6 10 uf, ±20 %, 50 V (1206), X5R Surface Mount Cap Various C2, C5, C8, C11 0.1 uf, ±10 %, 50 V (0805), X7R Surface Mount Cap Various J1, J2 2.92 mm 2.92 mm End Launch Connector Southwest Microwave 1092-02A-5 EVB Bias-Up Procedure EVB Bias-Down Procedure 1. Set ID limit to 16 A, IG limit to 124 ma 1. Turn off RF signal 2. Set VG to 5.0 V 2. Reduce VG to 5.0V. Ensure IDQ ~ 0mA 3. Set VD +28 V 3. Set VD to 0V 4. Adjust VG more positive until IDQ = 1.3 A (VG ~ 2.6 V Typical) 4. Turn off VD supply 5. Apply RF signal 5. Turn off VG supply Data Sheet Rev. E, September 2018 10 of 14 www.qorvo.com

Pad Configuration and Description Top View Pad No. Label Description 1 VG1 Gate voltage stage 1. Bias network is required; see Application Circuit as an example 2, 4, 7, 9 GND RF Ground 3 RF Input RF Input; matched to 50Ω; DC Blocked 5 VG2 Gate voltage stage 2. Bias network is required; see Application Circuit as an example 6 VD2 Drain voltage stage 2. Bias network is required; see Application Circuit as an example. 8 RF Output RF Output; matched to 50Ω; DC Blocked, DC Shorted 10 VD1 Drain voltage stage 1. Bias network is required; see Application Circuit as an example Evaluation Board PCB Information EVB PC Board Layout PCB Material Stack-up 1.0 oz. Cu Top Layer 0.013 0.003 Finished Board Thickness Rogers RO4003C (0.008 ) 1.0 oz. Cu Bottom Layer Data Sheet Rev. E, September 2018 11 of 14 www.qorvo.com

Package Marking and Dimensions Notes: 1. Contact plating: Ni Au Data Sheet Rev. E, September 2018 12 of 14 www.qorvo.com

Assembly Notes 1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the package. 3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value. Use the following tightening pattern: 4. Apply no-flux solder to each pin of the. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is recommended. Data Sheet Rev. E, September 2018 13 of 14 www.qorvo.com

Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 0B ANSI / ESDA / JEDEC JS-001 ESD Charged Device Model (CDM) Class C3 ANSI / ESDA / JEDEC JS-002 MSL Moisture Sensitivity Level N/A Caution! ESD-Sensitive Device Solderability The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 C. The use of no-clean solder to avoid washing after soldering is recommended. RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2018 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. E, September 2018 14 of 14 www.qorvo.com