TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM typically provides 34 dbm of saturated output power with small signal gain of 22 db. Third Order Intercept is 40 dbm at 23 dbm SCL. The TGA4-SM is available in a low-cost, surface mount lead x QFN package and is ideally suited for Point-to-Point Radio. lead xmm QFN package Lead-free and RoHS compliant Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: 34 dbm Psat, 32 dbm P1dB Gain: 22 db TOI: 40 dbm at 23 dbm/tone Integrated Power Detector Bias: Vd = 6 V, Idq = 14 ma, Vg = -0.7 V Typical Package Dimensions:.0 x.0 x 1.3 mm 1 2 VD1 VD2 VD3 VREF 27 26 2 24 23 22 21 VDET Performance is typical across frequency. Please reference electrical specification table and data plots for more details. RF IN 3 4 19 18 17 RF OUT 6 16 7 8 9 11 12 13 14 VG1 VG2 VG3 Applications Point-to-Point Radio K-band Sat-Com Ordering Information Part TGA4-SM TGA4-SM-T/R TGA4-SM EVB Description Waffle Tray 00 pieces on a 7 reel (standard) Evaluation Board Data Sheet Rev. F, November 19, 18-1 of 14 - www.qorvo.com
TGA4-SM Absolute Maximum Ratings Parameter Drain to Gate Voltage, VD VG Drain Voltage (VD) Drain Current (ID) Gate Voltage Range (VG) Gate Current (IG) Power Dissipation, PDISS RF Input Power, CW, T = 2 C Value V 6. V 3.0 A -3 to 0 V -12 to +1 ma W 2 dbm Channel Temperature, TCH 0 C Mounting Temperature ( seconds) 260 C Storage Temperature 40 to 0 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage Drain Current, Quiescent (IDQ) (1) Value 6 V 14 ma Drain Current, RF (IDD_Drive) See chart page 3 Gate Voltage, Typical Range (VG) Gate Current, RF (IG_Drive) Typical 0.4 to 0.8 V 2 ma Operating Temperature Range 40 to 8 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. (1) Min IDQ is 400mA. For large signal operation, stability is degraded for IDQ < 400mA Electrical Specifications Test conditions, unless otherwise noted: 2 C, VD = 6 V, IDQ = 14 ma, VG = -0.7 V typical, Z0 = 0 Ω Parameter Min Typical Max Units Frequency 21.2 23.6 GHz Small Signal Gain 22 db Input Return Loss db Output Return Loss db Output Power @ Saturation 34 dbm Output Power @ 1 db Gain Compression 32 dbm Output TOI @ 23 dbm/tone Pout/tone 40 dbm Gain Temperature Coefficient -0.02 dbm/ C Power Temperature Coefficient -0.00 dbm/ C Data Sheet Rev. F, November 19, 18-2 of 14 - www.qorvo.com
Output Power (dbm), Gain (db) Drain Current (ma) Output Power (dbm), Gain (db) Drain Current (ma) Output Power (dbm) Output Power (dbm) Gain (db) Return Loss (db) Gain (db) Return Loss (db) Performance Plots Test conditions unless otherwise noted: Temp. = 2 C, VD = 6 V, IDQ = 14 ma, VG = -0.7 V typical TGA4-SM 2 S-Parameters vs. Frequency Gain - - 2 S-Parameters vs. Frequency Gain - - - - IRL ORL 0 IRL ORL 0 0 18 19 21 22 23 24 2 0 21.2 21.6 22.0 22.4 22.8 23.2 23.6 Output Power vs. Frequency vs. Bias Output Power vs. Frequency vs. Bias Psat Psat 34 34 33 33 32 32 31 P1dB 31 P1dB 29 29 21 22 23 24 2 21.2 21.6 22.0 22.4 22.8 23.2 23.6 21.2 GHz Power, Gain, and Current vs. Input Power 23.6 GHz Power, Gain, and Current vs. Input Power 40 Pout at 21.2 GHz Gain at 21.2 GHz 200 220 40 Pout at 23.6 GHz Gain at 23.6 GHz 200 220 00 00 2 170 2 170 00 00 Current at 21.2 GHz 120 - - 0 Input Power (dbm) Current at 23.6 GHz 120 - - 0 Input Power (dbm) Data Sheet Rev. F, November 19, 18-3 of 14 - www.qorvo.com
IM3 and IM (dbc) Noise Figure (db) Output TOI (dbm) Output TOI (dbm) PAE (%) VDIFF (V) = VREF - VDET Performance Plots Test conditions unless otherwise noted: Temp. = 2 C, VD = 6 V, IDQ = 14 ma, VG = -0.7 V typical TGA4-SM 2 Power Added Efficiency vs. Frequency Psat Power Detector vs. Output Power vs. Frequency 22. GHz 1 P1dB 0.1 23.6 GHz 21.7 GHz 0 21 22 23 24 2 0.01 0 2 Output Power (dbm) Output TOI vs. Frequency vs. Output Power / Tone 46 dbm / Tone 4 44 43 42 41 40 39 38 23 dbm / Tone 37 19 21 22 23 24 2 26 4 44 43 42 41 Output TOI vs. Output Power / Tone 40 21.2GHz 39 21.GHz 38 22GHz 37 22.GHz 23GHz 23.6GHz 14 16 17 18 19 21 22 23 24 2 Output Power (dbm / Tone) IM3 and IM vs. Output Power / Tone vs. Frequency - IM3 21.2 GHz -2 IM3 22. GHz - IM3 23.6 GHz - -40-4 IM 21.2 GHz IM 22. GHz IM 23.6 GHz -0 - -60-6 -70 12 14 16 18 22 24 26 Output Power (dbm/tone) Noise Figure vs. Frequency 11 9 8 7 6 21.2 21.6 22.0 22.4 22.8 23.2 23.6 Data Sheet Rev. F, November 19, 18-4 of 14 - www.qorvo.com
Output TOI (dbm) IM3 (dbc) P1dB (dbm) Saturated Power (dbm) Gain (db) Noise Figure (db) Performance Plots Test conditions unless otherwise noted: Temp. = 2 C, VD = 6 V, IDQ = 14 ma, VG = -0.7 V typical TGA4-SM Gain vs. Frequency vs. Bias Noise Figure vs. Frequency vs. Bias 2 V 14 ma 6V 14 ma 14 13 12 11 6V 1260 ma 6V 14 ma 6V 1260 ma 6V 11 ma 6V 94 ma 9 8 7 6 V 14 ma 6V 11 ma 6V 94 ma 0 18 19 21 22 23 24 2 18 19 21 22 23 24 2 P1dB vs. Frequency vs. Bias Saturated Power vs. Frequency vs. Bias 34 6V 14 ma 6V 1260 ma 6V 10 ma 34 6V 14 ma 6V 1260 ma 33 33 32 31 32 31 6V 10 ma 29 V 14 ma 6V 94 ma 29 V 14 ma 6V 94 ma 21 22 23 24 2 21 22 23 24 2 4 44 43 42 41 40 Output TOI vs. Frequency vs. Bias 23 dbm Output Power / Tone 39 38 V 14 ma 6V 94 ma 37 6V 11 ma 6V 1260 ma 6V 14 ma 21 22 23 24 2 0 - - - - -2 - - -40-4 -0 - -60 IM3 vs. Output Power / Tone vs. Bias V 14 ma 6V 94 ma 6V 11 ma 6V 1260 ma 6V 14 ma 22. GHz 12 14 16 18 22 24 26 Output Power (dbm/tone) Data Sheet Rev. F, November 19, 18 - of 14 - www.qorvo.com
VDIFF (V) = VREF - VDET P1dB (dbm) Saturated Power (dbm) Gain (db) Output TOI (dbm) Performance Plots Test conditions unless otherwise noted: Temp. = 2 C, VD = 6 V, IDQ = 14 ma, VG = -0.7 V typical TGA4-SM Gain vs. Frequency vs. Temperature Output TOI vs. Frequency vs. Temperature -40 C +2 C 26 24 22 18 16 14 +8C 12 18 19 21 22 23 24 2 4 23 dbm Output Power / Tone 44 43 42 41 40 39 38-40 C 37 +8C +2 C 21 22 23 24 2 P1dB vs. Frequency vs. Temperature Saturated Power vs. Frequency vs. Temperature +2 C -40 C 34 33-40 C 34 33 32 31 32 31 +2 C +8 C 29 +8 C 21 22 23 24 2 29 21 22 23 24 2 Power Detector vs. Output Power vs. Temperature 22. GHz +2 C 1 0.1-40 C +8C 0.01 0 2 Output Power (dbm) Data Sheet Rev. F, November 19, 18-6 of 14 - www.qorvo.com
TGA4-SM Pin Configuration and Description Pin No. Label Description 1,7,8,14,,21,22,,29 GND 2,3,,6,16,17,19 N/C 4 RF IN RF input, matched to 0 ohms 9 VG1 Stage 1 gate voltage (1) VG2 Stage 2 gate voltage (1) 11 VG3 Stage 3 gate voltage (1) Backside paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see PCB Mounting Pattern on page for suggested footprint No internal connection; Recommend grounding these pins for best RF performance. See PCB Mounting Pattern on page for suggested footprint 12, 27 N/C No internal connection; May be grounded on PCB or left open 13 GND 18 RF OUT RF output, matched to 0 ohms Internally connected to GND. May be grounded on the PCB or left open VDET Detector diode output voltage. Varies with RF output power 23 VREF Reference diode output voltage 24 VD3 Stage 3 drain voltage (1) 2 VD2 Stage 2 drain voltage (1) 26 VD1 Stage 1 drain voltage (1) (1) Bias bypass network is required; see Application Circuit on page 8 as an example Data Sheet Rev. F, November 19, 18-7 of 14 - www.qorvo.com
TGA4-SM Applications Circuit VD C1 C8 C9 C7 C2 C3 (VREF) R 40 K 1 2 3 27 26 2 24 23 22 21 (VDET) 19 R4 40 K + VDIFF - RF IN 4 See Note A 18 See Note A RF OUT 17 6 16 7 8 9 11 12 13 14 VG C R1 Ohm C4 R2 Ohm C11 C R3 Ohm C12 C6 Note A: 0 Ω Microstrip Transmission Line. Bias Up Procedure 1. Set ID limit to 00 ma, IG limit to 0 ma 2. Set VG to 1. V 3. Set VD +6 V 4. Adjust VG more positive until IDQ = 14 ma (VG ~ 0.4 V to -0.8 V typical range). Apply RF signal Bias Down Procedure 1. Turn off RF signal 2. Reduce VG to 1. V. Ensure IDQ ~ 0 ma 3. Set VD to 0 V 4. Turn off VD supply. Turn off VG supply Data Sheet Rev. F, November 19, 18-8 of 14 - www.qorvo.com
TGA4-SM Evaluation Board Layout Board material is Rogers Corp. 4003 0.008 thickness with ½ oz copper cladding. For further technical information, refer to the TGA434-SM Product Information page. Bill of Material Ref. Des. Value Description Manuf. Part Number U1 K Band Power Amplifier Qorvo TGA434-SM C1 thru C6 1.0 µf Cap, 0402, 2 V, %, XR SMD Various C7 thru C12 1.0 µf Cap, 080, 2 V, %, XR SMD Various R1, R2, R3 Ω Res, 0402, 0.06 W, %, SMD Various R4, R 40 kω Res, 0402, 0.06 W, %, SMD Various Data Sheet Rev. F, November 19, 18-9 of 14 - www.qorvo.com
TGA4-SM Package Marking & Dimensions PCB Mounting Pattern Notes: 1. The pad pattern shown has been developed and tested for optimized assembly at Qorvo. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. 2. Ground vias are critical for the proper performance of this device. Vias have a final plated thru diameter of.2 mm (.0 ). Data Sheet Rev. F, November 19, 18 - of 14 - www.qorvo.com
Median Lifetime, Tm (Hours) TGA4-SM Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1).7 C/W Tbase = 8 C, Channel Temperature (TCH) (No RF Drive) VD = 6 V, IDQ = 14 ma 134 C PDISS = 8.6 W Median Lifetime (TM) 6.6E+6 Hrs Thermal Resistance (θjc) (1) Tbase = 8 C.7 C/W Channel Temperature (TCH) (Under RF Drive) VD = 6 V, IDD = ma POUT = 34.2 dbm, PDISS = W 143 C Median Lifetime (TM) 2.4E+6 Hrs Notes: 1. Thermal resistance is measured to back of the package. Median Lifetime Test Conditions: VD = 6 V Failure Criteria = % reduction in ID_MAX 1.0E+ Median Lifetime (Tm) vs. Channel Temperature (Tch) 1.0E+14 1.0E+13 1.0E+12 1.0E+11 1.0E+ 1.0E+09 1.0E+08 1.0E+07 1.0E+06 1.0E+0 FET 1.0E+04 2 0 7 0 12 0 17 0 Channel Temperature, Tch ( C) Data Sheet Rev. F, November 19, 18-11 of 14 - www.qorvo.com
TGA4-SM Tape and reel Information Standard T/R size = 00 pieces on a 7 reel CARRIER AND COVER TAPE DIMENSIONS Part Feature Symbol Size (in) Size (mm) Length A0 0.9.3 Cavity Width B0 0.9.3 Depth K0 0.06 1.6 Pitch P1 0.314 8 Centerline Distance Cavity to Perforation Length Direction P2 0.079 2 Cavity to Perforation Width Direction F 0.217. Cover Tape Width C 0.2 9.2 Carrier Tape Width W 0.472 12 Data Sheet Rev. F, November 19, 18-12 of 14 - www.qorvo.com
TGA4-SM Solderability 1. Compatible with the latest version of J-STD-0, Lead-free solder, 260 C 2. The use of no-clean solder to avoid washing after soldering is recommended. 3. Do not expose the package lid to temperatures > 0 C Recommended Soldering Temperature Profile Data Sheet Rev. F, November 19, 18-13 of 14 - www.qorvo.com
TGA4-SM Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 0 ANSI/ESD/JEDEC JS-001 ESD Charged Device Model (CDM) Class C3 JEDEC JESD22-C1 MSL Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-0 Caution! ESD-Sensitive Device RoHS Compliance This product is compliant with the 11/6/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive /863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 18 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. F, November 19, 18-14 of 14 - www.qorvo.com