AO882 2V CommonDrain Dual NChannel MOSFET General Description The AO882 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v while retaining a 2V V GS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bidirectional load switch, facilitated by its commondrain configuration. Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =4.V) R DS(ON) (at V GS =3.6V) R DS(ON) (at V GS =2.V) R DS(ON) (at V GS =.8V) 2V 7A < 2mΩ < 24mΩ < 28mΩ < 32mΩ < mω ESD protected! Top View TSSOP8 Bottom View Top View D D2 D/D2 S S G 2 3 4 8 7 6 D/D2 G2 G G2 Pin Absolute Maximum Ratings T A =2 C unless otherwise noted Parameter Symbol Maximum DrainSource Voltage 2 GateSource Voltage Continuous Drain T A =2 C Current T A =7 C Pulsed Drain Current C Power Dissipation B T A =2 C T A =7 C Junction and Storage Temperature Range V DS V GS I DM T J, T STG Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 64 83 Maximum JunctiontoAmbient A D R θja SteadyState 89 2 Maximum JunctiontoLead SteadyState 3 7 P D R θjl ±2 7 I D. 3..96 to S Units V V A W C Units Rev 7: April. 22 www.aosmd.com Page of
AO882 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =2µA, V GS =V 2 V I DSS Zero Gate Voltage Drain Current V DS =6V, V GS =V T J = C I GSS GateBody leakage current V DS =V, V GS = ±V µa V GS(th) Gate Threshold Voltage V DS =V GS I D =2µA..8. V I D(ON) On state drain current V GS =V, V DS =V 3 A R DS(ON) Static DrainSource OnResistance V GS =V, I D =7A V GS =4.V, I D =6.6A V GS =3.6V, I D =6A V GS =2.V, I D =.A V GS =.8V, I D =2A 3 7.2 2 T J =2 C 24 29 9.4 24 6 2.7 28 8 2 32 3 g FS Forward Transconductance V DS =V, I D =7A 2 S V SD Diode Forward Voltage I S =A,V GS =V.6 V I S Maximum BodyDiode Continuous Current 2. A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =V, f=mhz pf C rss Reverse Transfer Capacitance 2 pf SWITCHING PARAMETERS Q g Total Gate Charge 6 9 nc Q gs Gate Source Charge V GS =4.V, V DS =V, I D =7A 2 nc Q gd Gate Drain Charge nc t D(on) TurnOn DelayTime.2 us t r TurnOn Rise Time V GS =V, V DS =V, R L =.4Ω,. us t D(off) TurnOff DelayTime R GEN =3Ω 7.4 us t f TurnOff Fall Time 8 us t rr Body Diode Reverse Recovery Time I F =7A, di/dt=a/µs 9 ns Q rr Body Diode Reverse Recovery Charge I F =7A, di/dt=a/µs nc A. The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A =2 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) = C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initialt J =2 C. D. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in 2 FR4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse rating. µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: April. 22 www.aosmd.com Page 2 of
AO882 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 2 2 V 3V 4V 2 V DS =V 2V V GS =.V 2 3 4 Fig : OnRegion Characteristics (Note E) 2 C 2 C.. 2 2. Figure 2: Transfer Characteristics (Note E) R DS(ON) (mω) 4 3 2 V GS =.8V V GS =4.V V GS =3.6V V GS =2.V V GS =V Normalized OnResistance.8.6.4.2 V GS =4.V I D =6.6A V GS =2.V I D =.A V GS =.8V I D =2A 7 V GS =V I D =7A 2 2 Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E).8 2 7 2 7 Temperature ( C) Figure 4: OnResistance vs. Junction 8Temperature (Note E) R DS(ON) (mω) 8 7 6 4 3 2 C I D =7A I S (A).E.E 4.E.E2.E3 2 C 2 C 2 2 C.E4 2 4 6 8 Figure : OnResistance vs. GateSource Voltage (Note E).E..2.4.6.8..2 V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev 7: April. 22 www.aosmd.com Page 3 of
AO882 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 V DS =V I D =7A 8 6 C iss 3 2 Capacitance (pf) 4 2 C oss 2 4 6 8 Q g (nc) Figure 7: GateCharge Characteristics C rss 2 Figure 8: Capacitance Characteristics I D (Amps).... R DS(ON) limited T J(Max) = C T A =2 C µs µs ms ms s DC Power (W) T A =2 C... Figure 9: Maximum Forward Biased Safe Operating Area (Note F)... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =83 Single Pulse In descending order D=.,.3,.,.,.2,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T Rev 7: April. 22 www.aosmd.com Page 4 of
AO882 Gate Charge Test Circuit & Waveform Qg VDC DUT VDC Vds V Qgs Qgd Ig Charge V ds R L R esistive Switching Test C ircuit & W aveform s V ds R g DU T V DC 9% % V gs td(on) tr t d(off) t f t on t off D iode R ecovery Test C ircuit & W aveform s Vds DUT Q rr = Idt Vds L Isd Isd I F di/dt Ig VD C Vds I R M t rr Rev 7: April. 22 www.aosmd.com Page of