SiX N-hannel V (D-S) MOSFET PRODUT SUMMARY V DS (V) ( ) I D (ma) 5 at V GS =.5 V 7 at V GS =.5 V 75 9 at V GS =.8 V 5 at V GS =.5 V 5 S-89 S 6 D G 5 G Marking ode: L D S Top View Ordering Information: SiX-T-GE (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IE 69-- Definition TrenchFET Power MOSFET:.5 V Rated Low-Side Switching Low On-Resistance: 5 Low Threshold:.9 V (typ.) Fast Switching Speed: 5 ns (typ.).5 V Operation Gate-Source ESD Protected: V ompliant to RoHS Directive /95/E BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed ircuits Low Battery Voltage Operation APPLIATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply onverter ircuits Load/Power Switching ell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (T A = 5, unless otherwise noted) Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 5 ontinuous Drain urrent (T J = 5 ) a T A = 5 9 8 I D T A = 85 ma Pulsed Drain urrent b I DM 65 ontinuous Source urrent (Diode onduction) I S 5 8 Maximum Power Dissipation a T A = 5 8 5 P D T A = 85 5 mw Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Gate-Source ESD Rating (HBM, Method 5) ESD V Notes: a. Surface mounted on FR board. b. Pulse width limited by maximum junction temperature. Document Number: 77 S-5-Rev., 8-Nov-
SiX SPEIFIATIONS (T A = 5, unless otherwise noted) Parameter Symbol Test onditions Min. Typ. Max. Unit Static Gate Threshold Voltage V GS(th) V DS = V GS, I D = 5 µa.. V V DS = V, V GS = ±.8 V ±.5 ±. Gate-Body Leakage I GSS V DS = V, V GS = ±.5 V ±. ±. µa V DS = 6 V, V GS = V 5 na Zero Gate Voltage Drain urrent I DSS V DS = 6 V, V GS = V, T J = 85 µa On-State Drain urrent a I D(on) V DS = 5 V, V GS =.5 V 5 ma V GS =.5 V, I D = ma 5 Drain-Source On-State V GS =.5 V, I D = 75 ma 7 Resistance a V GS =.8 V, I D = 5 ma 9 V DS =.5 V, I D = ma Forward Transconductance a g fs V DS = V, I D = ma.5 S Diode Forward Voltage a V SD I S = 5 ma, V GS = V. V Dynamic b Total Gate harge Q g 75 Gate-Source harge Q gs V DS = V, V GS =.5 V, I D = 5 ma 75 p Gate-Drain harge Q gd 5 Turn-On Delay Time t d(on) 5 Rise Time t r V DD = V, R L = 7 5 Turn-Off Delay Time t d(off) I D ma, V GEN =.5 V, R g = 5 ns Fall Time t f 5 Notes: a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPIAL HARATERISTIS (T A = 5, unless otherwise noted).5 6. V GS = 5 V thru.8 V 5 T J = - 55 - Drain urrent (A) I D.. I D - Drain urrent (ma) 5 5. V. 5 6 V DS - Drain-to-Source Voltage (V) Output haracteristics..5..5..5 V GS - Gate-to-Source Voltage (V) Transfer haracteristics Document Number: 77 S-5-Rev., 8-Nov-
SiX TYPIAL HARATERISTIS (T A = 5, unless otherwise noted) V GS = V f = MHz - On-Resistance (Ω) V GS =.8 V V GS =.5 V - apacitance (pf) 8 6 oss iss V GS =.5 V 5 5 5 I D - Drain urrent (ma) On-Resistance vs. Drain urrent rss 8 6 V DS - Drain-to-Source Voltage (V) apacitance 5.6 V DS = V I D = 5 ma - Gate-to-Source Voltage (V) - On-Resistance (Normalized)... V GS =.5 V I D = ma V GS =.8 V I D = 75 ma V GS.8....6.8 Q g - Total Gate harge (n) Gate harge.6-5 - 5 5 5 75 5 T J -Junction Temperature ( ) On-Resistance vs. Junction Temperature 5 T J = 5 I D = ma -Source urrent (ma) IS T J = 5 T J = 5 - On-Resistance (Ω) I D = 75 ma....6.8... V SD - Source-to-Drain Voltage (V) Surge-Drain Diode Forward Voltage 5 6 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 77 S-5-Rev., 8-Nov-
SiX TYPIAL HARATERISTIS (T A = 5, unless otherwise noted)....5 I D =.5 ma Variance (V) V GS(th).. -. I GSS - (µa)..5. -..5 V GS =.8 V -. - 5-5 5 5 75 5 T J - Temperature ( ) Threshold Voltage Variance vs. Temperature. - 5-5 5 5 75 5 T J - Temperature ( ) I GSS vs. Temperature BV GSS - Gate-to-Source Breakdown Voltage (V) 7 6 5-5 - 5 5 5 75 5 T J - Temperature ( ) BV GSS vs. Temperature Normalized Effective Transient Thermal Impedance Duty ycle =.5. Notes:.. P DM.5 t. t. Duty ycle, D = t t. Per Unit Base = R thja = 5 /W Single Pulse. T JM - T A = P DM Z (t) thja. Surface Mounted. - - - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?77. Document Number: 77 S-5-Rev., 8-Nov-
Package Information S-89 6-Leads (SOT-56F) E/ A D e x aaa D B 6 5 SETION B-B E/ 6 E E x aaa DETAIL A 5 x bbb e B 6x b ddd M A B D L A L A A SEE DETAIL A Notes. Dimensions in millimeters.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed.5 mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed.5 mm per side.. Dimensions D and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. Datums A, B and D to be determined. mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between.8 mm and.5 mm from the lead tip. DIM. MILLIMETERS MIN. NOM. MAX. A.56.58.6 A.. b.5.. c...8 D.5.6.7 E.5.6.7 E.5..5 e.5.5.55 e.95..5 L.5.5.5 L... -9-Rev., -Aug- DWG: 588 Revision: -Aug- Document Number: 76 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOUMENT IS SUBJET TO HANGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN AND THIS DOUMENT ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT /doc?9
Application Note 86 REOMMENDED MINIMUM PADS FOR S-89: 6-Lead.5 (.).69 (.75). (.798).9 (.78). (.).5 (.). (.5) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLIATION NOTE Document Number: 765 Revision: -Jan-8
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