1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz

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Transcription:

GENERAL DESCRIPTION The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 db gain, 1200 Watts of pulsed RF output power at 32us, 2% duty cycle pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. CASE OUTLINE 55-Q03 Common Source ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25 C 2400W Maximum Voltage and Current Drain-Source Voltage (V DSS ) Gate-Source Voltage (V GS ) Maximum Temperatures Storage Temperature (T STG ) Operating Junction Temperature 150 V -8 to +0 V -55 to +125 C +200 C ELECTRICAL CHARACTERISTICS @ 25 C Symbol Characteristics Test Conditions Min Typ Max Units P IN Input Power P OUT =1200W, Freq=1030,1090 MHz 10.5 15 W G P Power Gain P OUT =1200W, Freq=1030,1090 MHz 18.5 20 db D Drain Efficiency P OUT =1200W, Freq=1030,1090 MHz 75 % Dr Droop P OUT =1200W, Freq=1030,1090 MHz 0.3 db VSWR-T Load Mismatch Tolerance P OUT =1200W, Freq= 1030MHz 3:1 Ө JC Thermal Resistance 32us, 2% duty cycle 0.25 C/W Bias Condition: Vdd=+50V, Idq=150mA average current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25 C I D(OFF) Drain leakage current V GS = -8V, V D =150V 64 ma I G(OFF) Gate leakage current V GS = -8V, V D = 0V 20 ma Export Classification: EAR 99

TYPICAL BROAD BAND PERFORMACE DATA 1030 MHz 1090 MHz P IN (W) P OUT (W) IRL (db) Eff (%) P OUT (W) IRL (db) Eff (%) 7.9 1045-14 74 1220-14 84 10.0 1200-14 76 1330-14 86 12.6 1330-13 78 1360-14 87 14.1 1390-13 79 1350-14 87

TYPICAL OVER TEMPERATURE PERFORMANCE

TRANSISTOR IMPEDANCE INFORMATION Input Matching Network G D S Z LOAD Output Matching Network 50 Ω 50 Ω Z SOURCE Note: Z SOURCE is looking into the input circuit Z LOAD is looking into the output circuit Frequency Z SOURCE Z LOAD 1030 MHz 1.32-j0.37 Ω 0.86-j1.1 Ω 1060 MHz 1.38-j0.2 Ω 0.80-j0.94 Ω 1090 MHz 1.46-j0.08 Ω 0.74-j0.82 Ω

TEST CIRCUIT (inches) Board Material: Roger Duroid 6006 @ H=25 mils, Er=6.15 DXF file available upon request BILL OF MATERIALS

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