ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low reverse recovery current (I RRM ) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I RRM and short t a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA99. Package April Features Soft Recovery.................... t b / t a >.5 Fast Recovery.................... t rr < 5ns Operating Temperature............... 175 o C Reverse Voltage...................... V Avalanche Energy Rated Applications Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Symbol ISL9KP3 CATHODE (FLANGE) JEDEC TO-AB ANODE CATHODE ANODE 1 K A 1 A Device Maximum Ratings (per leg) T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage V V RWM Working Peak Reverse Voltage V V R DC Blocking Voltage V I F(AV) Average Rectified Forward Current (T C = 17 o C) Total Device Current (Both Legs) I FRM Repetitive Peak Surge Current (khz Square Wave) 1 A I FSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase Hz) 1 A P D Power Dissipation 5 W E AVL Avalanche Energy (1A, mh) mj T J, T STG Operating and Storage Temperature Range -55 to 175 C T L T PKG Maximum Temperature for Soldering Leads at.3in (1.mm) from Case for 1s Package Body for 1s, See Techbrief TB33 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1 3 A A C C Fairchild Semiconductor Corporation ISL9KP3 Rev. C
Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity KP3 ISL9KP3 TO-AB - - Electrical Characteristics (per leg) T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics I R Instantaneous Reverse Current V R = V T C = 5 C - - 1 µa T C = 15 C - - 1. ma ISL9KP3 On State Characteristics V F Instantaneous Forward Voltage I F = A T C = 5 C -.. V T C = 15 C - 1.. V Dynamic Characteristics C J Junction Capacitance V R = 1V, I F = A - 3 - pf Switching Characteristics t rr Reverse Recovery Time I F = 1A, di F /dt = 1A/µs, V R = 3V - 1 5 ns I F = A, di F /dt = 1A/µs, V R = 3V - 1 3 ns t rr Reverse Recovery Time I F = A, - - ns I RRM Maximum Reverse Recovery Current di F /dt = A/µs, - 3. - A Q RR Reverse Recovery Charge V R = 39V, T C = 5 C - 5 - nc t rr Reverse Recovery Time I F = A, - 77 - ns S Softness Factor (t b /t a ) di F /dt = A/µs, - 3.7 - V R = 39V, I RRM Maximum Reverse Recovery Current - 3. - A T C = 15 C Q RR Reverse Recovery Charge - 15 - nc t rr Reverse Recovery Time I F = A, - 53 - ns S Softness Factor (t b /t a ) di F /dt = A/µs, -.5 - V R = 39V, I RRM Maximum Reverse Recovery Current -.5 - A T C = 15 C Q RR Reverse Recovery Charge 195 - nc di M /dt Maximum di/dt during t b - 5 - A/µs Thermal Characteristics R θjc Thermal Resistance Junction to Case - - 1.75 C/W R θja Thermal Resistance Junction to Ambient TO- - - C/W Fairchild Semiconductor Corporation ISL9KP3 Rev. C
Typical Performance Curves I F, FORWARD CURRENT (A) 1 1 175 o C 1 15 o C 1 15 o C 1 o C 5 o C I R, REVERSE CURRENT (µa) 1 1 1 175 o C 15 o C 15 o C 1 o C 5 o C ISL9KP3.5.5.75 1 1.5 1.5 1.75.5.5.75 V F, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage.1 1 3 5 V R, REVERSE VOLTAGE (V) Figure. Reverse Current vs Reverse Voltage t, RECOVERY TIMES (ns) 7 5 3 V R = 39V, T J = 15 C t b AT di F /dt = A/µs, 5A/µs, A/µs t, RECOVERY TIMES (ns) 9 7 5 3 V R = 39V, T J = 15 C t b AT I F = 1A, A, A 1 t a AT di F /dt = A/µs, 5A/µs, A/µs 1 1 1 1 I F, FORWARD CURRENT (A) Figure 3. t a and t b Curves vs Forward Current 1 1 t a AT I F = 1A, A, A 3 5 7 9 1 Figure. t a and t b Curves vs di F /dt I RRM, MAX REVERSE RECOVERY CURRENT (A) 11 1 9 7 5 3 V R = 39V, T J = 15 C di F /dt = A/µs di F /dt = 5A/µs di F /dt = A/µs 1 1 1 I F, FORWARD CURRENT (A) 1 I RRM, MAX REVERSE RECOVERY CURRENT (A) 1 1 1 1 V R = 39V, T J = 15 C I F = A I F = 1A I F = A 3 5 7 9 1 Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure. Maximum Reverse Recovery Current vs di F /dt Fairchild Semiconductor Corporation ISL9KP3 Rev. C
Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR 5 3 1 1 V R = 39V, T J = 15 C I F = 1A I F = A I F = A 3 5 7 9 1 Q RR, REVERSE RECOVERY CHARGE (nc) 35 V R = 39V, T J = 15 C 3 I F = 1A 5 I F = A 15 I F = A 1 5 1 3 5 7 9 1 ISL9KP3 Figure 7. Reverse Recovery Softness Factor vs di F /dt Figure. Reverse Recovery Charge vs di F /dt 1 1 C J, JUNCTION CAPACITANCE (pf) 1.1 1 1 1 V R, REVERSE VOLTAGE (V) I F(AV), AVERAGE FORWARD CURRENT (A) 1 15 15 155 1 15 17 175 T C, CASE TEMPERATURE ( o C) Figure 9. Junction Capacitance vs Reverse Voltage Figure 1. DC Current Derating Curve Z θja, NORMALIZED THERMAL IMPEDANCE 1..1 DUTY CYCLE - DESCENDING ORDER.5..1.5..1 SINGLE PULSE P DM t 1 t NOTES: DUTY FACTOR: D = t 1 /t PEAK T J = P DM x Z θja x R θja + T A.1 1-5 1-1 -3 1-1 -1 t, RECTANGULAR PULSE DURATION (s) 1 1 1 Figure 11. Normalized Maximum Transient Thermal Impedance Fairchild Semiconductor Corporation ISL9KP3 Rev. C
l.l Test Circuits and Waveforms V GE AMPLITUDE AND R G CONTROL di F /dt t 1 AND t CONTROL I F R G L DUT CURRENT SENSE + I F di F dt t a t rr t b ISL9KP3 V GE t 1 MOSFET V DD -.5 I RM I RM t Figure 1. t rr Test Circuit Figure 13. t rr Waveforms and Definitions I = 1A L = mh R <.1Ω V DD = 5V E AVL = 1/LI [V R(AVL) /(V R(AVL) - V DD )] Q 1 = IGBT (BV CES > DUT V R(AVL) ) L R V AVL Q1 CURRENT SENSE + V DD I V I L I L DUT - t t 1 t t Figure 1. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms Fairchild Semiconductor Corporation ISL9KP3 Rev. C
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