CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

Similar documents
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

DATA SHEET. BGA2712 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Jan Sep 10.

BGA Product profile. MMIC amplifier. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

DATA SHEET. BGA2709 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb Aug 06.

MMIC wideband medium power amplifier

Planar PIN diode in a SOD523 ultra small SMD plastic package.

BB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description

1 GHz wideband low-noise amplifier. The LNA is housed in a 6-pin SOT363 plastic SMD package.

NPN 25 GHz wideband transistor

200 MHz, 35 db gain reverse amplifier. High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC).

IMPORTANT NOTICE. use

75 MHz, 30 db gain reverse amplifier

Analog high linearity low noise variable gain amplifier

NPN 9 GHz wideband transistor. The transistor is encapsulated in a plastic SOT23 envelope.

Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.

BAP Product profile. 2. Pinning information. 3. Ordering information. Silicon PIN diode. 1.1 General description. 1.2 Features and benefits

Analog controlled high linearity low noise variable gain amplifier

NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.

Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified

Analog high linearity low noise variable gain amplifier

NPN wideband silicon germanium RF transistor

Four planar PIN diode array in SOT363 small SMD plastic package.

Wideband silicon germanium low-noise amplifier MMIC

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2022 MMIC mixer Dec 04. Product specification Supersedes data of 2000 Jun 06

Planar PIN diode in a SOD523 ultra small plastic SMD package.

VHF variable capacitance diode

PNP 5 GHz wideband transistor. Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers

34 db, 870 MHz GaAs push-pull forward amplifier

DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP64-04W Silicon PIN diode Jan 29. Product specification Supersedes data of 2000 Jun 06

50 ma LED driver in SOT457

DISCRETE SEMICONDUCTORS DATA SHEET M3D124. BGA2001 Silicon MMIC amplifier. Product specification Supersedes data of 1999 Jul 23.

SiGe:C low-noise amplifier MMIC for LTE. The BGU8L1 is optimized for 728 MHz to 960 MHz.

1 GHz 15 db gain wideband amplifier MMIC

NPN wideband silicon RF transistor

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

BF861A; BF861B; BF861C

DATA SHEET. BAP50-05 General purpose PIN diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Feb May 10.

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation

BCP56H series. 80 V, 1 A NPN medium power transistors

20 ma LED driver in SOT457

NPN wideband silicon RF transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17W NPN 1 GHz wideband transistor. Product specification Supersedes data of November 1992.

1 GHz, 22 db gain GaAs high output power doubler

DISCRETE SEMICONDUCTORS DATA SHEET M3D124. BGA2003 Silicon MMIC amplifier. Product specification Supersedes data of 1999 Jul 23.

DATA SHEET. BFS540 NPN 9 GHz wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Dec 05.

DISCRETE SEMICONDUCTORS DATA SHEET. BAP65-03 Silicon PIN diode. Product specification Supersedes data of 2001 May Feb 11

Dual NPN wideband silicon RF transistor

1 GHz wideband low-noise amplifier with bypass

1 GHz, 22 db gain GaAs high output power doubler dbc CSO composite second-order V o = 48 dbmv at 862 MHz

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

Single Schottky barrier diode

High-speed switching in e.g. surface-mounted circuits

Low noise high linearity amplifier

PEMH11; PUMH11. NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

65 V, 100 ma NPN general-purpose transistors

Output rectifiers in high-frequency switched-mode power supplies

Broadband LDMOS driver transistor. A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.

BAV102; BAV103. Single general-purpose switching diodes

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM

Hex non-inverting precision Schmitt-trigger

80 V, 1 A NPN medium power transistors. Type number Package PNP complement Nexperia JEITA JEDEC BCP56T SOT223 SC-73 - BCP53T

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BC857xMB series. 45 V, 100 ma PNP general-purpose transistors

Quad 2-input NAND buffer (open collector) The 74F38 provides four 2-input NAND functions with open-collector outputs.

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PDTD1xxxU series. 500 ma, 50 V NPN resistor-equipped transistors

BGU General description. 2. Features and benefits. SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS

BGU Product profile. SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass. 1.1 General description. 1.2 Features and benefits

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

NX1117C; NX1117CE series

BC817-25QA; BC817-40QA

DISCRETE SEMICONDUCTORS DATA SHEET. BFG541 NPN 9 GHz wideband transistor

PNP general-purpose double transistor. PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.

DISCRETE SEMICONDUCTORS DATA SHEET. BFT93 PNP 5 GHz wideband transistor

PDTC143Z series. NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Low noise high linearity amplifier

General-purpose switching and amplification Mobile applications

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

HEF4001B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NOR gate

DISCRETE SEMICONDUCTORS DATA SHEET. BFG135 NPN 7GHz wideband transistor. Product specification 1995 Sep 13

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Two tolerance series: ± 2 % and ± 5 % AEC-Q101 qualified

PDTB1xxxT series. 500 ma, 50 V PNP resistor-equipped transistors

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

20 V, 2 A P-channel Trench MOSFET

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T j = 25 C V RRM

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

Hex non-inverting HIGH-to-LOW level shifter

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

PEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω

PMZ950UPEL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN wideband silicon RF transistor. NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

BAS21GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BC857XQA series. 45 V, 100 ma PNP general-purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET. BF510 to 513 N-channel silicon field-effect transistors

Low collector-emitter saturation voltage V CEsat High collector current capability High collector current gain h FE at high I C

Transcription:

Rev. 3 12 September 211 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Internally matched to 5 Wide frequency range (3.3 GHz at 3 db bandwidth) Flat 22 db gain ( 1 db up to 2.8 GHz) 8 dbm output power at 1dB compression point Good linearity for low current (IP3 out = 2 dbm) Low second harmonic, 3 dbc at P D = 4 dbm Unconditionally stable (K 2). 1.3 Applications LNB IF amplifiers Cable systems ISM General purpose. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V S DC supply voltage - 5 6 V I S supply current - 4.3 - ma s 21 2 insertion power gain f = 1 GHz - 22 - db NF noise figure f = 1 GHz - 2.6 - db P L(sat) saturated load power f = 1 GHz - 4 - dbm

2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 V S 2, 5 GND2 6 5 4 1 3 RF_OUT 6 3 4 GND1 6 RF_IN 1 2 3 4 2, 5 sym52 3. Ordering information Table 3. Ordering information Type number Package Name Description Version - plastic surface mounted package; 6 leads SOT363 4. Marking 5. Limiting values Table 4. Marking Type number Marking code B6- Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V S DC supply voltage RF input - 6 V AC coupled I S supply current - 8 ma P tot total power dissipation T sp 9 C - 2 mw T stg storage temperature 65 +15 C T j junction temperature - 15 C P D maximum drive power - 1 dbm All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 2 of 15

6. Thermal characteristics Table 6. 7. Characteristics Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction P tot = 2 mw; 3 K/W to solder point T sp 9 C Table 7. Characteristics V S =5V; I S =4.3mA; T j =25 C; measured on demo board; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I S supply current 3.5 4.3 5.5 ma s 21 2 insertion power gain f = 1 MHz 11 13.3 15 db f = 1 GHz 2 21.7 23 db f = 1.8 GHz 21 23.2 25 db f = 2.2 GHz 21 23.3 25 db f = 2.6 GHz 2 22.1 24 db f = 3 GHz 18 2.1 22 db s 11 2 input return losses f = 1 GHz 1 12 - db f = 2.2 GHz 8 1 - db s 22 2 output return losses f = 1 GHz 1 12 - db f=2.2ghz 7 8.5 - db s 12 2 isolation f = 1.6 GHz 53 54 - db f = 2.2 GHz 38 39 - db NF noise figure f = 1 GHz - 2.6 2.8 db f=2.2ghz - 3.1 3.3 db B bandwidth at s 21 2 3 db below flat gain 3 3.3 - GHz at 1 GHz K stability factor f = 1 GHz - 18 - f=2.2ghz - 2.3 - P L(sat) saturated load power f = 1 GHz 5 4. - dbm f=2.2ghz 6 5. - dbm P L(1dB) load power at 1 db gain compression; 9 8. - dbm f=1ghz at 1 db gain compression; 1 8.5 - dbm f=2.2ghz IM2 second order at P D = 4 dbm, f =1GHz 29 3 - dbc intermodulation product IP3 in input, third order f=1ghz 21 19.4 - dbm intercept point f=2.2ghz 24 22.7 - dbm IP3 out output, third order f=1ghz 2.3 - dbm intercept point f=2.2ghz 1.6 - dbm All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 3 of 15

8. Application information Figure 1 shows a typical application circuit for the MMIC. The device is internally matched to 5, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 1 pf for applications above 1 MHz. However, when the device is operated below 1 MHz, the capacitor value should be increased. The 22 nf supply decoupling capacitor, C1 should be located as close as possible to the MMIC. The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as close as possible to the MMIC, and ideally directly beneath it. When using via holes, use multiple via holes, located as close as possible to the MMIC. V S C1 1 V S RF input C2 6 RF_IN RF_OUT C3 3 RF output GND1 4 GND2 2, 5 mgu435 Fig 1. Typical application circuit. Figure 2 shows the PCB layout, used for the standard demonstration board. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 4 of 15

3 mm PH PHILIPS 3 mm IN OUT V+ PH PHILIPS IN C2 DUT C1 C3 OUT V+ 1aab255 Fig 2. Material = FR4, thickness =.6 mm, r =4.6. PCB layout and demonstration board showing components. 8.1 Grounding and output impedance If the grounding is not optimal, the gain becomes less flat and the 5 output matching becomes worse. To further increase output matching to 5, a 12 resistor (R1) can be placed in series with C3 (see Figure 3). This will significantly improve the output impedance, at the cost of 1 db gain and 1 db output power. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 5 of 15

V S C1 RF input V S C2 C3 RF_IN RF_OUT R1 RF output GND1 GND2 1aab346 Fig 3. Application circuit for better output impedance into 5. 8.2 Application examples The excellent wideband characteristics of the MMIC make it an ideal building block in IF amplifiers such as LNBs (see Figure 4). As second amplifier after an LNA, the MMIC offers an easy matching, low noise solution (see Figure 5). from RF circuit oscillator mixer wideband amplifier to IF circuit or demodulator mgu438 Fig 4. Application as IF amplifier. antenna LNA wideband amplifier mixer oscillator to IF circuit or demodulator mgu439 Fig 5. Application as RF amplifier. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 6 of 15

9 +1 1. 135 +.5 +2 45.8.6 +.2 +5 4 GHz 1 MHz.2.5 1 2 5 1 18.4.2.2 5 135.5 2 45 1 9 1aab247 1. Fig 6. I S = 4.3 ma; V S =5V; P D = 35 dbm; Z o =5. Input reflection coefficient (s 11 ); typical values. 9 +1 1. 135 +.5 +2 45.8.6 +.2 +5.4.2 18.2.5 1 2 5 1 1 MHz 4 GHz.2 5 135.5 2 45 1 9 1aab248 1. Fig 7. I S = 4.3 ma; V S =5V; P D = 35 dbm; Z o =5. Output reflection coefficient (s 22 ); typical values. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 7 of 15

1aab249 3 1aab25 s 12 2 (db) 2 s 21 2 (db) 2 (1) (2) (3) 4 1 6 1 2 3 4 f (MHz) 1 2 3 4 f (MHz) Fig 8. I S = 4.3 ma; V S =5V; P D = 35 dbm; Z o =5. Isolation ( s 12 2 ) as a function of frequency; typical values. Fig 9. P D = 35 dbm; Z o =5. (1) I S = 4.7 ma; V S =5.5V. (2) I S = 4.3 ma; V S =5V. (3) I S = 3.9 ma; V S =4.5V. Insertion gain ( s 21 2 ) as a function of frequency; typical values. 1aab251 1aab252 P L (dbm) (1) (2) (3) P L (dbm) (1) (2) (3) 1 1 2 2 Fig 1. 3 5 4 3 2 1 P D (dbm) f=1ghz; Z o =5. (1) V S =5.5V. (2) V S =5V. (3) V S =4.5V. Load power as a function of drive power at 1 GHz; typical values. Fig 11. 3 5 4 3 2 1 P D (dbm) f=2.2ghz; Z o =5. (1) V S =5.5V. (2) V S =5V. (3) V S =4.5V. Load power as a function of drive power at 2.2 GHz; typical values. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 8 of 15

5 1aab253 4 1aab254 NF (db) 4 K 3 3 2 (3) (2) (1) 2 1 1 5 1 15 2 25 f (MHz) 1 2 3 4 f (MHz) Fig 12. Z o =5. (1) I S = 4.7 ma; V S =5.5V. (2) I S = 4.3 ma; V S =5V. (3) I S = 3.9 ma; V S =4.5V. Noise figure as a function of frequency; typical values. Fig 13. I S = 4.3 ma; V S =5V; Z o =5. Stability factor as a function of frequency; typical values. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 9 of 15

Table 8. Scattering parameters V S =5V; I S = 4.3 ma; P D = 35 dbm; Z o =5 ; T amb =25 C. f s 11 s 21 s 12 s 22 K- (MHz) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) factor 1.153 27.76918 4.64164 13.82793.1958 11.345.231889 14.37137 5.2 2.121228 24.6812 5.427784 7.99773.3611 114.8849.21954 14.9179 23.9 4.217855 3.97418 7.924499 7.594877.1688 77.39562.223868 23.6987 33.8 6.26219 28.8926 9.8775 3.92853.1336 17.6765.22656 34.95361 33.8 8.26297 61.21535 11.13563 55.31486.1473 124.944.237554 48.114 26.8 1.24189 96.9469 12.17817 8.9316.236 155.3396.25378 63.76927 17.8 12.211289 136.4953 13.2575 14.2842.2785 147.5162.271479 82.31896 12.2 14.18828 175.4377 13.6797 128.89.3866 138.751.287623 14.192 8.4 16.187898 128.6387 14.14423 153.3766.4588 124.9325.37361 125.9161 6.7 18.231527 8.79592 14.54321 179.671.5641 12.4153.338893 154.672 5.1 2.257172 4.8414 14.65137 154.6647.8743 13.426.352132 177.7152 3.2 22.33945 2.249913 14.61385 127.2237.11662 94.4722.378963 145.8774 2.3 24.311735 39.67469 13.78165 1.12.14471 54.7247.35958 115.129 2. 26.288113 77.37179 12.7517 74.12332.1742 33.1165.34987 88.727 1.9 28.26544 114.1115 11.55715 48.4486.1673 7.697541.327615 61.52393 2.3 3.24479 151.8463 1.12992 25.3978.19651 11.858.296875 39.544 2.3 32.225353 17.8795 8.961976 3.789364.18743 28.17932.27147 18.63863 2.8 34.219366 136.6841 8.6187 16.85382.1973 45.6266.247253 1.617895 3. 36.22623 16.1421 7.318683 37.2896.19248 6.69421.217973 21.228 3.3 38.23349 78.62692 6.61939 56.974.2895 72.89823.184766 4.71164 3.4 4.244216 54.63669 6.15669 75.98154.2531 85.18773.1582 6.81328 3.8 All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 1 of 15

9. Package outline Plastic surface-mounted package; 6 leads SOT363 D B E A X y H E v M A 6 5 4 Q pin 1 index A 1 2 3 A 1 c e 1 b p w M B L p e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e max 1 H E Lp Q v w y mm 1.1.1.8.3.2.25.1 2.2 1.8 1.35 1.15 1.3.65 2.2 2..45.15.25.15.2.2.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT363 SC-88 4-11-8 6-3-16 Fig 14. Package outline; SOT363 (SC-88). All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 11 of 15

1. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes v.3 211912 Product data sheet - v.2 Modifications: v.2 (9397 75 13291) _N v.1 (9397 75 12826) The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. 24924 Product data sheet - _N v.1 2422 Preliminary data sheet - - All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 12 of 15

11. Legal information 11.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 13 of 15

Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 3 12 September 211 14 of 15

13. Contents 1 Product profile.......................... 1 1.1 General description..................... 1 1.2 Features and benefits.................... 1 1.3 Applications........................... 1 1.4 Quick reference data.................... 1 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 2 6 Thermal characteristics.................. 3 7 Characteristics.......................... 3 8 Application information................... 4 8.1 Grounding and output impedance.......... 5 8.2 Application examples.................... 6 9 Package outline........................ 11 1 Revision history........................ 12 11 Legal information....................... 13 11.1 Data sheet status...................... 13 11.2 Definitions............................ 13 11.3 Disclaimers........................... 13 11.4 Trademarks........................... 14 12 Contact information..................... 14 13 Contents.............................. 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 211. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 September 211 Document identifier: