MOSFET 95VCoolMOSªP7SJPowerDevice DPAK Thelatest95VCoolMOS P7seriessetsanewbenchmarkin95V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years pioneeringsuperjunctiontechnologyinnovation. tab Features BestinclassFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss BestinclassDPAKRDS(on) BestinclassV(GS)thofVandsmallestV(GS)thvariationof±.5V IntegratedZenerDiodeESDprotection BestinclassCoolMOS qualityandreliability Fullyoptimizedportfolio 1 2 Drain Pin 2 Benefits Bestinclassperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns Gate Pin 1 *1: Internal body diode Source *2: Integrated ESD diode Pin *2 *1 Potentialapplications RecommendedforflybacktopologiesforLEDLighting,lowpower ChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower. AlsosuitableforPFCstageinConsumerandSolarapplications. ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25 C 95 V RDS(on),max 1.2 Ω Qg,typ 15 nc ID 6 A Eoss @ 5V 1. µj VGS(th),typ V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 252 95R1K2P7 see Appendix A 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 1 Revision History........................................................................ 14 Trademarks........................................................................... 14 Disclaimer............................................................................ 14 2
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 6.7 A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse 16 A TC=25 C Avalanche energy, single pulse EAS 11 mj ID=.7A; VDD=5V; see table 1 Avalanche energy, repetitive EAR.14 mj ID=.7A; VDD=5V; see table 1 Application (Flyback) relevant avalanche current, single pulse ) IAS. A MOSFET dv/dt ruggedness dv/dt 1 V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation Ptot 52 W TC=25 C Storage temperature Tstg 55 15 C Operating junction temperature Tj 55 15 C Mounting torque Ncm Continuous diode forward current IS 4.1 A TC=25 C Diode pulse current 2) IS,pulse 16 A TC=25 C Reverse diode dv/dt 4) dv/dt 1 V/ns measured with standard leakage inductance of transformer of 1µH VDS=...4V,ISD<=1.4A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 5 A/µs VDS=...4V,ISD<=1.4A,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj,max. Maximum Duty Cycle D =.5 2) Pulse width tp limited by Tj,max ) For further explanation please read AN CoolMOS TM 7V P7 & 95V P7 4) Identical low side and high side switch with identical RG
2Thermalcharacteristics TableThermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.4 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wave & reflow soldering allowed RthJA 5 45 C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 4
Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 95 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 2.5.5 V VDS=VGS,ID=.14mA Zero gate voltage drain current IDSS 1 1 µa VDS=95V,VGS=V,Tj=25 C VDS=95V,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) 1. 2.291 1.2 Ω VGS=1V,ID=2.7A,Tj=25 C VGS=1V,ID=2.7A,Tj=15 C Gate resistance RG 1 Ω f=25khz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 478 pf VGS=V,VDS=4V,f=25kHz Output capacitance Coss 7 pf VGS=V,VDS=4V,f=25kHz Effective output capacitance, energy related 1) Co(er) 12 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 12 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 7 ns Rise time tr 1 ns Turnoff delay time td(off) 6 ns Fall time tf 12 ns VDD=4V,VGS=1V,ID=2.7A, RG=1.2Ω;seetable9 VDD=4V,VGS=1V,ID=2.7A, RG=1.2Ω;seetable9 VDD=4V,VGS=1V,ID=2.7A, RG=1.2Ω;seetable9 VDD=4V,VGS=1V,ID=2.7A, RG=1.2Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2 nc VDD=76V,ID=2.7A,VGS=to1V Gate to drain charge Qgd 5 nc VDD=76V,ID=2.7A,VGS=to1V Gate charge total Qg 15 nc VDD=76V,ID=2.7A,VGS=to1V Gate plateau voltage Vplateau 4.4 V VDD=76V,ID=2.7A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 5
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=2.7A,Tj=25 C Reverse recovery time trr 56 ns Reverse recovery charge Qrr µc Peak reverse recovery current Irrm 8 A VR=4V,IF=1.4A,diF/dt=5A/µs; see table 8 VR=4V,IF=1.4A,diF/dt=5A/µs; see table 8 VR=4V,IF=1.4A,diF/dt=5A/µs; see table 8 6
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 6 Diagram2:Safeoperatingarea 1 2 5 1 1 1 µs 4 1 1 µs Ptot[W] ID[A] 1 1 1 µs 2 1 2 1 ms 1 ms 1 1 DC 25 5 75 1 125 15 TC[ C] Ptot=f(TC) 1 4 1 1 1 1 2 1 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram:Safeoperatingarea 1 2 Diagram4:Max.transientthermalimpedance 1 1 1 1 1 µs 1 1 µs 1.5 ID[A] 1 1 1 2 1 µs 1 ms ZthJC[K/W] 1 1.2.1.5.2.1 single pulse 1 ms 1 DC 1 4 1 1 1 1 2 1 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 2 1 5 1 4 1 1 2 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 7
Diagram5:Typ.outputcharacteristics 12 Diagram6:Typ.outputcharacteristics 8 9 5.5 V 7 V 6 V 8 V 2 V 1 V 6 6 V 7 V 8 V 1 V 2 V ID[A] 6 5 V ID[A] 4 5 V 5.5 V 4.5 V 4.5 V 2 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance.4 2 V Diagram8:Drainsourceonstateresistance 2.5 1 V 2.9 6 V 2. RDS(on)[Ω] 2.4 4 V 4.5 V 5.5 V RDS(on)[normalized] 1.5 1.9 1. 1.4 6 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS.5 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=2.7A;VGS=1V 8
Diagram9:Typ.transfercharacteristics 12 Diagram1:Typ.gatecharge 12 25 C 1 9 8 ID[A] 6 15 C VGS[V] 6 12 V 76 V 4 2 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 1 15 2 Qgate[nC] VGS=f(Qgate);ID=2.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 Diagram12:Avalancheenergy 12 9 1 1 IF[A] EAS[mJ] 6 1 125 C 25 C 1 1..2.4.6.8 1. 1.2 1.4 1.6 1.8 VSD[V] IF=f(VSD);parameter:Tj 25 5 75 1 125 15 Tj[ C] EAS=f(Tj);ID=.7A;VDD=5V 9
Diagram1:Drainsourcebreakdownvoltage 11 Diagram14:Typ.capacitances 1 4 15 1 Ciss 1 1 2 VBR(DSS)[V] 95 C[pF] 1 1 Coss 9 1 Crss 85 5 25 25 5 75 1 125 15 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1 1 1 2 4 5 VDS[V] C=f(VDS);VGS=V;f=25kHz Diagram15:Typ.Cossstoredenergy 5 4 Eoss[µJ] 2 1 2 4 6 8 1 VDS[V] Eoss=f(VDS) 1
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 11
12 95VCoolMOSªP7SJPowerDevice 6PackageOutlines 2.5 REVISION 6 52216 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm 2.5 DOCUMENT NO. Z8B28 MILLIMETERS 4.57 (BSC) 2.29 (BSC) L4 D N H E1 e1 e E D1 L 1.18.51.89 5.2 9.4 6.5 4.2 5.97 b A DIM b2 c b c2 A1 4,95 MIN 2.16.64.46.65.4..46.2.5.198.25.185.25.7 1.78 1.2 5.21 5.84 6.22 6.7 1.27 1.48.18 (BSC).9 (BSC).7.25.4.2.265.5.245.41.195.85.25.18.26.16. 5.5 MAX 2.41.15 1.15.61.89.98 INCHES MIN.217 MAX.6.95.5.24.45.9 L Figure1OutlinePGTO252,dimensionsinmm/inches
7AppendixA Table11RelatedLinks IFXCoolMOSP7Webpage:www.infineon.com IFXCoolMOSP7applicationnote:www.infineon.com IFXCoolMOSP7simulationmodel:www.infineon.com IFXDesigntools:www.infineon.com 1
RevisionHistory Revision:21864,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 2185 Release of final version 2.1 21864 Final Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14