BGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.

Similar documents
LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.

Tire Pressure Monitoring Sensor

BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

BGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,

Power Management & Multimarket

BGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.

BGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012

Power Management & Multimarket

Power Management & Multimarket

BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,

BGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,

Power Management & Multimarket

BGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary

BGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

LED Drivers for High Power LEDs

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

BGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,

BGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

Power Management & Multimarket

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.

Power Management & Multimarket

Power Management & Multimarket

BGB707L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Wideband MMIC LNA with Integrated ESD Protection. Revision 3.

Power Management & Multimarket

Revision: Rev

BGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),

BFP650. Data Sheet. RF & Protection Devices. High Linearity Low Noise SiGe:C NPN RF Transistor. Revision 1.0,

Power Management & Multimarket

Power Management & Multimarket

BGA628L7. Data Sheet. RF & Protection Devices. Silicon Germanium Wide Band Low Noise Amplifier. Revision 1.1, Preliminary

BFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.

BGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,

Power Management & Multimarket

TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

Power Management & Multimarket

LED Drivers for High Power LEDs

BFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,

BGA734L16. Data Sheet. RF & Protection Devices. Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Revision 1.1,

BFP720ESD. Data Sheet. RF & Protection Devices. Robust High Performance Low Noise Bipolar RF Transistor. Revision 1.0,

TVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

Revision: Rev

BFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Power Management & Multimarket

Revision: Rev

Revision: Rev

Power Management & Multimarket

BFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,

BFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.

TVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

BFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

Revision: Rev

Power Management & Multimarket

BGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision

BGA735N16. Data Sheet. RF & Protection Devices. High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)

BFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BGSF110GN26. Preliminary Datasheet. RF & Protection Devices

BFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

BFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

High Precision Hall Effect Switch for Consumer Applications

LED Driver for High Power LEDs ILD4001. Data Sheet. Industrial and Multimarket. Step down LED Controller for high power LEDs. Revision 2.

Analog Manifold Air Pressure Sensor IC. Analog Absolute Pressure Sensor. Revision 1.0,

to 5GHz Revision: Rev

Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.

BFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

BGSA14GN10. Data Sheet. Power Management & Multimarket. Single-Pole Quad Throw Antenna Tuning Switch. Revision

High Precision Automotive Hall Effect Switch for 5V Applications

Revision: Rev

Revision: Rev

BGSA13GN10. Data Sheet. Power Management & Multimarket. Single-Pole Triple Throw Antenna Tuning Switch. Revision

Revision: Rev

Revision: Rev

Revision: Rev

AN523. About this document. Scope and purpose

SPDT RF CMOS Switch. Revision: Rev

Revision: Rev

BFP720. Data Sheet. RF & Protection Devices. SiGe:C Heterojunction Wideband RF Bipolar Transistor. Revision 1.0,

Ultra Low Quiescent Current Linear Voltage Regulator

Band 20 ( MHz)

Power Management and Multimarket

Revision: Rev

BFR840L3RHESD for 5 to 6 GHz

Revision: Rev

EiceDRIVER. High voltage gate drive IC. Application Note. AN Revision 1.3,

Revision: Rev

Transcription:

SiGe:C Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.3, 2010-06-24 RF & Protection Devices

Edition 2010-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Revision History Page / Item Subjects (major changes since last revisions) Revision 3.3, 2010-06-24 Converted to the new IFX Template. Revision 3.2 Supply Voltage limited to 4.0 V Trademarks of Infineon Technologies AG BlueMoon, COMNEON, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CORECONTROL, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, EUPEC, FCOS, HITFET, HybridPACK, ISOFACE, I²RF, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PROFET, PRO-SIL, PRIMARION, PrimePACK, RASIC, ReverSave, SatRIC, SensoNor, SIEGET, SINDRION, SMARTi, SmartLEWIS, TEMPFET, thinq!, TriCore, TRENCHSTOP, X-GOLD, XMM, X-PMU, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 3.3, 2010-06-24

Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... 5 List of Tables.................................................................... 6 1 Features........................................................................ 7 2 Product Brief.................................................................... 8 3 Maximum Ratings................................................................ 9 4 Thermal Characteristics.......................................................... 10 5 Operation Conditions............................................................ 10 6 Electrical Characteristics......................................................... 11 6.1 DC Characteristics............................................................... 11 6.2 AC Characteristics............................................................... 11 7 Package Information............................................................ 13 Data Sheet 4 Revision 3.3, 2010-06-24

List of Figures List of Figures Figure 1 Pinning of BGB717L7ESD........................................................ 8 Figure 2 Total Power Dissipation P tot = f (T s )................................................ 10 Figure 3 FM Radio Testing Circuit........................................................ 11 Figure 4 Package Outline TSLP-7-1 (bottom view)........................................... 13 Figure 5 Footprint TSLP-7-1............................................................. 13 Figure 6 Marking of TSLP-7-1............................................................ 13 Figure 7 Tape of TSLP-7-1.............................................................. 13 Data Sheet 5 Revision 3.3, 2010-06-24

List of Tables List of Tables Table 1 Pinning Table.................................................................. 8 Table 2 Maximum Ratings at T A = 25 C.................................................... 9 Table 3 Thermal Resistance............................................................ 10 Table 4 Operation Conditions........................................................... 10 Table 5 DC Characteristics at T A = 25 C.................................................. 11 Table 6 Bill of Material................................................................ 12 Table 7 AC Characteristics in the FM Radio LNA Application.................................. 12 Data Sheet 6 Revision 3.3, 2010-06-24

SiGe:C Low Noise Amplifier MMIC for FM Radio Applications BGB717L7ESD 1 Features Main features: High performance FM radio LNA with integrated biasing Worldwide FM band support (76 MHz to 108 MHz) Integrated ESD protection for all pins (3 kv for RF input vs. GND, 2 kv for all other pin combinations, HBM) Very high gain at low current consumption High input compression point High input impedance Excellent noise figure from latest SiGe:C technology Integrated active biasing circuit enables stable operation point against temperature- and processing-variations Minimum external components Operation voltage: 1.8 V to 4.0 V Power-off function Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications Active FM antenna systems Portable FM radio Personal headphone radio ISM applications Product Name Package Marking BGB717L7ESD TSLP-7-1 AX Data Sheet 7 Revision 3.3, 2010-06-24

Product Brief 2 Product Brief The BGB717L7ESD is an advanced low noise amplifier MMIC with integrated ESD protection and active biasing specifically designed for FM antenna systems requiring high gain, reduced power consumption and very low distortion. The external components determine the gain of the FM amplifier and can also be modified to extend the operating frequency. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. 6 5 4 7 1 2 3 Figure 1 Pinning of BGB717L7ESD Table 1 Pinning Table Pin Function 1 GND 2 RF-In 3 Bias-Out 4 Ctrl On/Off 5 RF-Out 6 V CC 7 GND Data Sheet 8 Revision 3.3, 2010-06-24

Maximum Ratings 3 Maximum Ratings Table 2 Maximum Ratings at T A = 25 C Parameter Symbol Value Unit Note / Test Condition Min. Typ. Max. Supply voltage V CC 4.0 V T A = -55 C 3.5 Supply current at VCC pin I CC 25 ma IDC current at RF-In Pin I B 3 ma Control On / Off voltage V ctrl 4.0 V Total power dissipation 1) T S 112 C 2) P tot 100 mw Operation junction temperature T JOp -55 150 C Storage temperature T Stg -55 150 C ESD Capability Human Body Model JESD22-A114-B 2000 V Machine Model JESD22-A115-A 100 V Charge Device Model JESD22-1500 V C101-C 1) T S measured at the GND pin (7) at soldering point to the PCB 2) T S soldering point temperature Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 3.3, 2010-06-24

Thermal Characteristics 4 Thermal Characteristics Table 3 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point 1) R thjs 375 K/W 1) For calculation of R thja please refer to Application Note Thermal Resistance 120 100 80 Ptot [mw] 60 40 20 0 0 50 100 150 Ts [ C] Figure 2 Total Power Dissipation P tot = f (T s ) 5 Operation Conditions Table 4 Operation Conditions Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Supply voltage V CC 1.8 3.0 4.0 V Voltage Ctrl On/Off pin in On mode V ctrl-on 1.2 3.0 4.0 V Voltage Ctrl On/Off pin in Off mode V ctrl-off -0.3 0 0.3 V Data Sheet 10 Revision 3.3, 2010-06-24

Electrical Characteristics 6 Electrical Characteristics 6.1 DC Characteristics Table 5 DC Characteristics at T A = 25 C Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Supply current I CC 2.4 3.0 3.6 ma V CC = 3 V V ctrl = 3 V Small signal operation Supply current in Off mode I CC-off 1 6 μa V CC = 4.0 V V ctrl = 0 V Current into Ctrl On/Off pin in On mode I ctrl-on 14 20 μa V CC = 3 V V ctrl = 3 V Current into Ctrl On/Off pin in Off mode I ctrl-off 0.1 μa V CC = 4.0 V V ctrl = 0 V 6.2 AC Characteristics This section presents the AC characteristics of the BGB717L7ESD as measured in a high-ohmic FM radio application circuit using a PCB and a population as described in the application note AN176. Please consult our website to download the application note: www.infineon.com/rf.appnotes. The application schematic is shown in Figure 3 and the function of each component is explained in Table 6. C 3 V CC RFin C 1 GND RF-In 1 2 BGB717ESD 6 7 5 V CC RF-Out R 1 R 2 C 4 RFout L 1 Bias-Out 3 4 On/Off C 2 GND V Ctrl BGB717L7ESD_Application_circuit Figure 3 FM Radio Testing Circuit Data Sheet 11 Revision 3.3, 2010-06-24

Electrical Characteristics Table 6 Bill of Material Component Value Manufacturer / Type Function C 1 330 pf Various / 0402 DC blocking C 2 47 nf Various / 0402 DC stabilization C 3 47 nf Various / 0402 DC stabilization C 4 330 pf Various / 0402 DC blocking R 1 56 Ω Various / 0402 For biasing, output matching and stabilization R 2 10 Ω Various / 0402 For output matching and stabilization L 1 470 nh Taiyo Yuden LK1608R47K-T / 0603 RF choke The following table gives an overview on the performance of the FM radio LNA application circuit. All data were measured in a 50 Ω system. Table 7 AC Characteristics in the FM Radio LNA Application 1) Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Insertion power gain S 21 2 10 12 14 db Input return loss 2) RL IN 0 0.5 3) 3 db Output return loss 2) RL OUT 13 16 4) 19 db Noise figure 5) F 50Ω 1.0 1.5 db Z s = 50 Ω Input 1dB gain compression point 2) IP -1dB -8.0-5.5 dbm Input 3 rd Order Intercept Point 2) IIP 3-15.5-12.5 dbm P RFIN = -40 dbm 1) As described in AN176, T A = 25 C, V CC = 3 V, V ctrl = 3 V, I CC = 3 ma, f = 100 MHz 2) Verified by random sampling 3) High LNA input impedance leads to power matching with high ohmic antennas 4) Output matching is accomplished by the external resistors R1 and R2 5) An aggressive low pass filter prevents radio broadcast signals from distorting the NF measurement Data Sheet 12 Revision 3.3, 2010-06-24

Package Information 7 Package Information Top view Bottom view 0.05 MAX. +0.1 0.4 1.3 ±0.05 1±0.05 4 5 6 ±0.05 1.7 7 1.2 ±0.035 1) 1) 1.1 ±0.035 6x ±0.035 1) ±0.05 2 Pin 1 marking 3 2 1 6x ±0.035 1) 1) Dimension applies to plated terminal TSLP-7-1-PO V04 Figure 4 Package Outline TSLP-7-1 (bottom view) 1.4 NSMD 1.4 1.4 SMD 1.4 5 5 1.9 1.9 1.9 1.9 5 5 0.3 0.3 0.3 Copper Solder mask 5 5 Stencil apertures R0.1 0.3 0.3 0.3 Copper Solder mask 5 5 Stencil apertures R0.1 Figure 5 Footprint TSLP-7-1 TSLP-7-1-FP V01 AX Figure 6 Marking of TSLP-7-1 4 0.5 8 2.18 Pin 1 marking 1.45 TSLP-7-1-TP V03 Figure 7 Tape of TSLP-7-1 Data Sheet 13 Revision 3.3, 2010-06-24

www.infineon.com Published by Infineon Technologies AG

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BGB 717L7ESD E6327 BGB 717L7ESD E6433