Maintenance/ Discontinued

Similar documents
Maintenance/ Discontinued

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification DMG20401 in SMini6 type package

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

DME20B01. Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification. Features. Marking Symbol: A3

DMC904F0. Silicon NPN epitaxial planar type. For high frequency amplification. Features. Marking Symbol: D3. Basic Part Number.

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG26401 in SMini6 type package

DSA7101. Silicon PNP epitaxial planar type. For low frequency amplification Complementary to DSC7101. Features. Marking Symbol: 4C.

Maintenance/ Discontinued

XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Composite Transistors. For switching/digital circuits

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DATA SHEET. Part No. AN17821A

DA2J10100L DA2J10100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

I F = I R = 100 ma, I rr = 0.1 I R, Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Maintenance/ Discontinued

Maintenance/ Discontinued

DA3J101F0L DA3J101F0L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3

Maintenance/ Discontinued

FK Silicon N-channel MOS FET. For switching circuits. Overview. Package. Features. Marking Symbol: CV. Packaging

Maintenance/ Discontinued

Maintenance/ Discontinued

130 Reverse current IR VR = 1 V. 20 A Temperature coefficient of zener voltage *3 SZ IZ = 5 ma mv/ C Note) 1.

DB2J50100L DB2J50100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For high speed switching circuits. Internal Connection

BAS16 Silicon epitaxial planar type

DA2J10400L DA2J10400L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

DA6X102S0R Silicon epitaxial planar type

DA2S00100L DA2S00100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For band switching. Internal Connection

DA4X106U0R Silicon epitaxial planar type

DA6X106U0R Silicon epitaxial planar type

DB4X501K0R Silicon epitaxial planar type

Maintenance/ Discontinued

BAS16 Silicon epitaxial planar type

1.0 V Zener voltage *1, *2 VZ IZ = 5 ma Zener operating resistance RZ IZ = 5 ma. 40 Zener rise operating resistance RZK IZ = 0.

LNJ757W86RA. High Bright Surface Mounting Chip LED. ESS Type. Absolute Maximum Ratings T a = 25 C. Lighting Color

Maintenance/ Discontinued

DA22F2100L DA22F2100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

FK L FK L. Silicon N-channel MOSFET. Doc No. TT4-EA Revision. 4. For switching FK in SMini3 type package

MTM232232LBF Silicon N-channel MOSFET

Maintenance/ Discontinued

DB2W31800L DB2W31800L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 4. For rectification. Internal Connection

Maintenance/ Discontinued

MTM232270LBF Silicon N-channel MOSFET

Maintenance/ Discontinued

Packaging 1. Cathode 2. Anode V Zener operating resistance. 40 Reverse current IR VR = 2.0 V

DB2J41100L DB2J41100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

MTM761110LBF MTM761110LBF. Silicon P-channel MOSFET. for Switching. Internal Connection. Pin name

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

FK L Silicon N-channel MOS FET

Maintenance/ Discontinued

FK6K02010L FK6K02010L. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin Name

MTM861280LBF MTM861280LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 2. For Switching. Internal Connection.

Maintenance/ Discontinued

Maintenance/ Discontinued

FC R FC R. Dual N-channel MOSFET. For switching. Internal Connection. Pin name

FK330309EL FK330309EL. Silicon N-channel MOSFET For switching circuits. Doc No. TT4-EA Revision. 2. Internal Connection.

Maintenance/ Discontinued

MTM761100LBF MTM761100LBF. Silicon P-channel MOSFET For Switching. Doc No. TT4-EA Revision. 2. Internal Connection. Pin Name

1 000 pcs / reel (standard) Max 40. Min - Symbol VR VF IF = 1.0 A

Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F I F = 10 ma V V

FK L FK L. Silicon N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching FK in SSSMini3 type package

DB2L33500L1 For rectification

MTM861270LBF MTM861270LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 4. For Switching. Internal Connection.

Maintenance/ Discontinued

Maintenance/ Discontinued

FG R FG R. Silicon N-channel MOSFET(FET1) Silicon P-channel MOSFET(FET2) Doc No. TT4-EA Revision. 2.

Discontinued AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control

Maintenance/ Discontinued

MTM232270LBF MTM232270LBF. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching MTM13227 in SMini3 type package

MTM763200LBF MTM763200LBF. Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) Doc No. TT4-EA Revision. 2

Maintenance/ Discontinued

FM6K62010L FM6K62010L. Silicon N-channel MOSFET(FET) Silicon epitaxial planar type(sbd) Doc No. TT4-EA Revision. 3

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

FCAB22370L1 Gate resistor installed Dual N-channel MOS FET

MTM232230LBF MTM232230LBF. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 3. For switching. Internal Connection.

Maintenance/ Discontinued

FC R FC R. Dual N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin name

Maintenance/ Discontinued

FC R FC R. Dual N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin name

Maintenance/ Discontinued

DB2L32400L For rectification

Maintenance/ Discontinued

Maintenance/ Discontinued

Min. Max 40. Symbol VR V Reverse Current IR VR = 40 V Terminal Capacitance Ct VR = 10 V, f = 1 MHz VF IF = 1.0 A

Maintenance/ Discontinued

DB2F43100L For rectification

FC8J33040L FC8J33040L. Dual N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching For DC-DC Converter. Internal Connection.

Maintenance/ Discontinued

Transcription:

This product complies with the RoHS Directive (EU 22/95/EC). Transistors Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531 Features Low noise voltage NV High forward current transfer ratio h FE S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. Absolute Maximum Ratings Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 35 V Collector-emitter voltage (Base open) V CEO 35 V Emitter-base voltage (Collector open) V EBO 5 V Collector current I C 5 ma Peak collector current I CP 1 ma Collector power dissipation P C 15 mw Junction temperature T j 15 C Storage temperature T stg 55 to +15 C Electrical Characteristics ±3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO, I E = 35 V Collector-emitter voltage (Base open) V CEO I C = 2 ma, I B = 35 V Emitter-base voltage (Collector open) V EBO I E = 1 ma, I C = 5 V Base-emitter voltage V BE V CE = 1 V,.7 1. V Collector-base cutoff current (Emitter open) I CBO V CB = 1 V, I E =.1 ma Collector-emitter cutoff current (Base open) I CEO V CE = 1 V, I B = 1 ma Forward current transfer ratio * h FE, I C = 2 ma 18 7 Collector-emitter saturation voltage V CE(sat), I B = 1 ma.6 V Transition frequency f T V CB = 5 V, I E = 2 ma, f = 2 MHz 1 MHz Noise voltage NV V CB = 1 V,, G V = 8 db, R g = 1 kω, 15 mv Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 73 measuring methods for transistors. 2. *: Rank classification Rank R S T h FE 18 to 36 26 to 52 36 to 7 Merking symbol SR SS ST Package Code SMini3-G1 Pin Name 1. Base 2. Emitter 3. Collector Marking Symbol: S includes following four Product lifecycle stage. Publication date : October 28 SJC14DED 1

This product complies with the RoHS Directive (EU 22/95/EC). Collector power dissipation P C (mw) Transition frequency f T (MHz) 24 2 16 12 8 4 4 8 12 16 Ambient temperature T a ( C) 12 1 8 6 4 2 5 4 3 2 1 P C T a I C V CE I C I B 16 14 12 1 8 6 4 2 I B = 35 µa 3 µa 25 µa 2 µa 15 µa 1 µa 5 µa 4 8 12 I C V BE V CE(sat) I C h FE I C.4.8 1.2 1.6 2. Base-emitter voltage V BE (V) V CB = 5 V.1 1 1 1 Emitter current I E (ma) Collector-emitter saturation voltage V CE(sat) (V) 1 1 1.1 I C / I B = 1.1.1 1 1 1 Collector output capacitance (Common base, input open circuited) C ob (pf) 2 16 12 8 4 I E = f = 1 MHz.1 1 1 1 Collector-base voltage V CB (V) Forward current transfer ratio h FE.1.2.3.4.5 Base current I B (ma) 72 6 48 36 24 12.1 1 1 1 f T I E C ob V CB NV V CE 16 12 8 4 16 12 8 4 R g = 1 kω G V = 8 db includes following four Product lifecycle stage. 1 1 1 2 SJC14DED

This product complies with the RoHS Directive (EU 22/95/EC). 3 24 18 12 6 R g = 1 kω 1 1 1 16 12 8 4 NV V CE NV I C NV I C NV R g G V = 8 db V CE = 1 V G V = 8 db.5 ma.1 ma 1 1 1 Signal source resistance R g (kω) 16 12 8 4.1.1 1 3 V CE = 1 V G V = 8 db 24 18 12 6 NV R g V CE = 1 V G V = 8 db R g = 1 kω.5 ma.1 ma 1 1 1 Signal source resistance R g (kω) 3 24 18 12 6 V CE = 1 V G V = 8 db R g = 1 kω.1.1 1 includes following four Product lifecycle stage. SJC14DED 3

This product complies with the RoHS Directive (EU 22/95/EC). SMini3-G1 Unit: mm 1.3 +.1. 1 3 (.65) 1.3 ±.1 2. ±.2 2 (.65) 1.25 ±.1 (.425).9 ±.1 to.1 2.1 ±.1 +.2.1.9 5.15.5 includes following four Product lifecycle stage. +.1.2 ±.1 4 SJC14DED

2885 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. includes following four Product lifecycle stage.