STD840DN40. Dual NPN high voltage transistors in a single package. Features. Applications. Description

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Transcription:

Dual NPN high voltage transistors in a single package Datasheet production data Features Low V CE(sat) Simplified circuit design Reduced component count Fast switching speed Applications Compact fluorescent lamp (CFL) 220 V mains Electronic ballast for fluorescent lighting 8 1 DIP-8 4 Description This device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in a dual-island DIP-8 package, with separated terminals for a high degree of mounting flexibility. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging STD840DN40 D840DN40 DIP-8 Tube October 2012 Doc ID 16796 Rev 3 1/9 This is information on a product in full production. www.st.com 9

Electrical ratings STD840DN40 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CBO Collector-base voltage (I E = 0) 700 V V CEO Collector-emitter voltage (I B = 0) 400 V V EBO Emitter-base voltage (I C = 0, I B = 1.5 A, t p < 10 ms) V (BR)EBO V I C Collector current 4 A I CM Collector peak current (t P < 5 ms) 8 A I B Base current 1.5 A I BM Base peak current (t P < 5 ms) 3 A P TOT Total dissipation at T case = 25 C single transistor 45 W Total dissipation at T amb = 25 C single transistor 3 W T STG Storage temperature -65 to 150 C T J Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value Unit R thja Thermal resistance junction-ambient (single transistor) 42 C/W R thjc Thermal resistance junction-case (single transistor) 2.7 C/W 1. Device mounted on PCB area of 25 mm². 2/9 Doc ID 16796 Rev 3

Electrical characteristics 2 Electrical characteristics T case = 25 C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CES I CEO V (BR)EBO V CEO(sus) V CE(sat) V BE(sat) h FE Collector cut-off current (V BE = 0) Collector cut-off current (I B = 0) Emitter-base breakdown voltage (I C = 0) Collector-emitter sustaining voltage (I B = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain 1. Pulse test: pulse duration 300 µs, duty cycle 2 %. V CE = 700 V V CE = 700 V T c = 125 C 100 500 µa µa V CE = 400 V 250 µa I E = 10 ma 9 18 V I C = 10 ma 400 V I C = 1 A I C = 2 A I C = 1 A I C = 2 A I C = 10 ma I C = 2 A I B = 0.2 A I B = 0.4 A I B = 0.2 A I B = 0.4 A V CE = 5 V V CE = 5 V 0.5 1 1.2 1.3 10 8 24 V F Diode forward voltage I F = 1 A 2.5 V t s t f Resistive load Storage time Fall time I C = 1 A I B1 = - I B2 = 0.2 A V CC = 125 V t p = 20 µs 2.5 0.2 V V V V µs µs Doc ID 16796 Rev 3 3/9

Electrical characteristics STD840DN40 2.1 Electrical characteristics (curves) Figure 2. DC current gain (V CE = 1 V) Figure 3. DC current gain (V CE = 5 V) Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Freewheel diode forward voltage Figure 7. Resistive load switching time 4/9 Doc ID 16796 Rev 3

Test circuit 3 Test circuit Figure 8. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor Doc ID 16796 Rev 3 5/9

Package mechanical data STD840DN40 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 5. DIP-8 mechanical data mm. Dim. Min. Typ. Max. A 4.80 A1 0.50 A2 3.10 3.50 A3 1.40 1.60 b 0.38 0.55 b1 0.38 0.51 b2 1.47 1.57 b3 0.89 1.09 c 0.21 0.35 c1 0.20 0.30 D 9.10 9.30 D1 0.13 E 7.62 8.25 E1 6.25 6.45 e 2.54 ea 7.62 eb 7.62 10.90 ec 0 1.52 L 2.92 3.81 6/9 Doc ID 16796 Rev 3

Package mechanical data Figure 9. Drawing dimension DIP-8 8145726_A Doc ID 16796 Rev 3 7/9

Revision history STD840DN40 5 Revision history Table 6. Document revision history Date Revision Changes 18-Nov-2009 1 Initial release. 16-Apr-2010 2 Inserted P TOT and R thja values Table 2 and Table 3 on page 2. 23-Oct-2012 3 Modified P TOT and R thja values in Table 2 and Table 3 on page 2. Minor text changes. 8/9 Doc ID 16796 Rev 3

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