Switching ( 30V, 4.5) Features ) Low On-resistance. (57mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive. (4.5V) External dimensions (Unit : mm) SOP8 0.4 (8) (5) () (4).27 5.0 pplications Power switching, DC-DC converter 0.2 0.4Min. 3.9 6.0.75 Each lead has same dimensions Structure Silicon P-channel MOS FET Equivalent circuit (8) (7) (6) (5) Packaging specifications 2 2 Type Package Code Basic ordering unit (pieces) Taping TB 2500 () (2) ESD PROTECTION DIODE 2 BODY DIODE (3) (4) () Tr Source (2) Tr Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr Drain (8) Tr Drain /4
bsolute maximum ratings () Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Pw µs, Duty cycle % 2 Mounted on a ceramic board Continuous Continuous Symbol S S P IS ISP PD Tch Tstg Limits 30 ±20 ±4.5 ±8.6 8 2.0 50 55 to +50 Unit V V W C C 2 Electrical characteristics () Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current SS Gate threshold voltage (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. Typ. Max. Unit Conditions ± µ =±20V, =0V 30 V = m, =0V µ = 30V, =0V.0 2.5 V = V, = m 40 56 mω = 4.5, = V 57 80 mω = 2.5, = 4.5V 65 90 mω = 2.5, = 4.0V 3.5 S = V, = 2.5 850 pf = V 90 pf =0V 20 pf f=mhz ns = 2.5 25 ns 5V = V 60 ns RL=6.0Ω 25 ns RGS=Ω 8.5 nc 5V 2.5 nc = 5V 3.0 nc = 4.5 Body diode characteristics (source-drain characteristics) Forward voltage VSD.2 V IS=.6, =0V 2/4
Electrical characteristic curves 0. 0.0 = V 0.00 0.0 0.5.0.5 2.0 2.5 3.0 3.5 4.0 GTE-SOURCE VOLTGE : (V) Fig. Typical Transfer Characteristics 00 0 = 4V = 4.5V = V 0. Fig.2 Static Drain-Source On-State Resistance vs. Drain Current 00 0 = V 0. Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 00 0 = 4.5V 0. Fig.4 Static Drain-Source On-State vs. Drain Current 00 0 = 4V 0. Fig.5 Static Drain-Source On-State vs. Drain Current REVERSE DRIN CURRNT : R () 0. =0V 0.0 0.0 0.5.0.5 SOURCE-DRIN VOLTGE : VSD (V) Fig.6 Reverse Drain Current Source-Drain Current CPCITNCE : C (pf) 000 00 0 f=mhz =0V Ciss Coss Crss 0.0 0. 0 SWITCHING TIME : t (ns) 000 00 0 td (off) tf td (on) tr = 5V = V RG=Ω 0.0 0. GTE-SOURCE VOLTGE : (V) 8 7 6 5 4 3 2 = 5V = 4.5 RG=Ω 0 0 2 3 4 5 6 7 8 9 DRIN-SOURCE VOLTGE : (V) TOTL GTE CHRGE : Qg (nc) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4
Measurement circuits RL % 90% RG D.U.T. 90% 90% td(on) % % tr td(off) tr ton toff Fig. Switching Time Test Circuit Fig. Switching Time Waveforms VG Qg IG(Const.) RG D.U.T. RL Qgs Qgd Charge Fig.2 Gate Charge Test Circuit Fig.3 Gate Charge Waveform 4/4
ppendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. pplication circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. ny data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. bout Export Control Order in Japan Products described herein are the objects of controlled goods in nnex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. ppendix-rev.0