c12fc-v2-gr1a PXAC12FC Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 18 2 MHz Description The PXAC12FC is a 1-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 18 to 2 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, (db) 24 16 12 8 4 V DD = 28 V, I DQ = 24 ma, ƒ = 185 MHz 3.84 MHz bandwidth PAR @.1% CCDF -6 3 35 4 45 5 RF Specifications, 188 MHz Average Output Power (dbm) 6 4 - -4 (%) PXAC12FC Package H-37248-4 Features Broadband internal matching Asymmetric Doherty design - Main: P1dB = 35 W Typ - Peak: P1dB = 8 W Typ Broadband internal matching CW performance in a Doherty configuration, 185 MHz, 28 V - Output power = 1 W P 1dB - = 17.3 db at 17.8 W Avg. - = 46% at 17.8 W Avg. CW performance in a Doherty configuration, 21 MHz, 28 V - Output power = 15.8 W Avg. - = 15.5 db - = 46% Capable of handling 1:1 VSWR @ 28 V, 16 W (CW) output power Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant One-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture) V DD = 28 V, V GS(peak) = 1.4 V, I DQ = 24 ma, = 16 W average, ƒ = 188 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 1 db PAR @.1% probability on CCDF. Characteristic Symbol Min Typ Max Unit G ps 16 17 db Drain h D 43 46 % Adjacent Channel Power Ratio ACPR 29 26 dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Data Sheet 1 of 1 Rev. 5.1, 16-6-22
PXAC12FC RF Specifications, 214 MHz One-carrier WCDMA Characteristics (not subject to production test verified by design/characterization in Infineon Doherty test fixture) V DD = 28 V, V GS(peak) = 1.2 V, I DQ = 24 ma, = 16 W average, ƒ = 214 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 1 db PAR @.1% CCDF. Characteristic Symbol Min Typ Max Unit G ps 16. 16.5 db Drain h D 39 42 % Adjacent Channel Power Ratio ACPR 29 27 dbc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = V, I DS = 1 ma V (BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1. µa V DS = 63 V, V GS = V I DSS 1. µa Gate Leakage Current V GS = 1 V, V DS = V I GSS 1. µa On-state Resistance (main) V GS = 1 V, V DS =.1 V R DS(on).3 W (peak) V GS = 1 V, V DS =.1 V R DS(on).16 W Operating Gate Voltage (main) V DS = 28 V, I DQ = 242 ma V GS 2.5 2.69 2.8 V (peak) V DS = 28 V, I DQ = A V GS.5.7 1.6 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 65 V Gate-source Voltage V GS 6 to +1 V Operating Voltage V DD to +32 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +15 C Thermal Resistance (T CASE = 7 C, 1 W CW) RqJC.7 C/W Ordering Information Type and Version Order Code Package and Description Shipping PXAC12FC V2 R PXAC12FCV2RXTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 5 pcs PXAC12FC V2 R25 PXAC12FCV2R25XTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 25 pcs Data Sheet 2 of 1 Rev. 5.1, 16-6-22
c12fc-v2-gr2d c12fc-v2-gr1c c12fc-v2-gr3 PXAC12FC Typical Performance (data taken in an Infineon test fixture) V DD = 28 V, I DQ = 24 ma, ƒ = 1842 MHz 3.84 MHz bandwidth V DD = 28 V, I DQ = 24 ma, ƒ = 188 MHz 3.84 MHz bamdwidth Peak/Average Ratio, (db) 24 6 4 16 12 8 PAR @.1% CCDF - 4-4 -6 3 35 4 45 5 (%) Peak/Average Ratio, (db) 24 16 12 8 PAR @.1% CCDF 4 6 4 - -4 3 35 4 45 5 c12fc-v2-gr1b -6 (%) Average Output Power (dbm) Average Output Power (dbm) ACP Up, ACP Low (dbc) -1 - -3-4 -5-6 V DD = 28 V, I DQ = 24 ma, ƒ = 185 188 MHz, 3.84 MHz bandwidth, 1 db PAR 185 MHz 1842 MHz 188 MHz -7 3 35 4 45 5 Average Output Power (dbm) 6 5 4 3 1 Drain (%) (db) 24 22 18 16 14 Broadband Performance V DD = 28 V, I DQ = 24 ma, = 42 dbm, PAR = 1 db PAR 12 165 175 185 195 5 Frequency (MHz) 6 5 4 3 1 Drain (%) Data Sheet 3 of 1 Rev. 5.1, 16-6-22
c12fc-v2-gr6a c12fc-v2-gr5 c12fc-v2-gr6b PXAC12FC Typical Performance (cont.) Broadband Performance V DD = 28 V, I DQ = 24 ma, = 42 dbm, PAR = 1 db CW Performance V DD = 28 V, I DQ = 24mA ACP Up (dbc) -15 - -25-3 -35-4 ACP Up Return Loss -5-1 -15 - -25-3 Input Return Loss (db) (db) 35 3 25 15 1 5 185 MHz 1842 MHz 188 MHz 7 6 5 4 3 1 (%) -45-35 165 175 185 195 5 25 3 35 4 45 5 55 c12fc-v2-gr4 Frequency (MHz) Output Power (dbm) CW Performance at selected V DD I DQ = 24 ma, ƒ = 185 MHz CW Performance at selected V DD I DQ = 24 ma, ƒ = 1842.5 MHz 35 3 7 6 35 3 7 6 Power (db) 25 15 1 V DD = 32 V 5 V DD = 28V V DD = 24V 1 25 3 35 4 45 5 55 5 4 3 (%) Power (db) 25 15 1 V DD = 32 V 5 V DD = 28V 1 V DD = 24V 25 3 35 4 45 5 55 5 4 3 (%) Output Power (dbm) Output Power (dbm) Data Sheet 4 of 1 Rev. 5.1, 16-6-22
c12fc-v2-gr6c c12fc-v2-gr7 PXAC12FC Typical Performance (cont.) CW Performance at selected V DD I DQ = 24 ma, ƒ = 188 MHz Small Signal CW & Input Return Loss, single side V DD = 28 V, I DQ = 35 ma 35 3 7 6-2 Power (db) 25 15 1 V DD = 32 V 5 V DD = 28V V DD = 24V 1 25 3 35 4 45 5 55 5 4 3 (%) Power (db) 18 16 14 Return Loss -1-14 12-18 18 1825 185 1875 19-6 Input Return Loss (db) Output Power (dbm) Frequency (MHz) See next page for load pull performance Data Sheet 5 of 1 Rev. 5.1, 16-6-22
PXAC12FC Load Pull Performance Z Source D1 Z Load G1 G2 S D2 Main side pulsed CW signal: 16 µsec, 1% duty cycle; 28 V, 25 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] 181 3.92 j12.74 8.74 j8.12 19.55 46.79 47.75 53.6 14.51 j15.32 21.55 45. 31.65 62.1 184 4.13 j12.84 8.56 j7.87 19.43 46.58 45.5 52.3 15.46 j14.87 21.52 44.81 3.28 61.3 188 4.54 j14.31 8.66 j8.19 19.37 46.92 49. 55.3 18.77 j12.73 21.53 45.5 31.98 65.2 PAE [%] Peak side pulsed CW signal: 16 µsec, 1% duty cycle; 28 V, 54 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] [dbm] PAE [%] P 1dB Zl [db] [dbm] 181 3.75 j8.61 2.62 j5.15 18.47 49.89 97.5 48.3 4.96 j7.28.92 48.49 7.63 59.9 184 3.69 j8.66 2.99 j4.99 19.5 49.85 96.61 51. 5.17 j6.42.8 48.71 74.3 59.2 188 5.57 j9.39 3.9 j5.13 19.31 5.12 12.8 5.1 6.31 j6.59 21.34 48.55 71.61 63.2 PAE [%] Reference Circuit, 188 MHz DUT PXAC12FC V2 Reference Circuit Part No. LTA/PXAC12FC V2 PCB Rogers 435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower) Data Sheet 6 of 1 Rev. 5.1, 16-6-22
c 2 1 2 2 f c _ c d _ 2 1 4-7 - 9 PXAC12FC Reference Circuit (cont.) RO435,. (6) RO435,. (61) C4 C14 C15 C212 C8 C3 VDD C7 R11 RF_IN R12 U1 C18 C13 C19 C12 C11 PXAC12FC C6 C21 C211 C9 C1 C217 C214 RF_OUT VGS C16 C17 R13 C11 C5 C2 VDD C213 C215 C216 PXAC12FC_IN_1 PXAC12FC_OUT_1 Reference circuit assembly diagram (not to scale) Component Information Component Description Manufacturer P/N Input C11 Chip capacitor, 2.2 pf ATC ATC6F2R2CW25T C12, C15, C17 Chip capacitor, 18 pf ATC ATC6F18JW25T C13 Chip capacitor, 1.5 pf ATC ATC6F1R5CW25T C14, C16 Capacitor, 1 µf, 5 V Taiyo Yuden UMK325C716MM-T C18 Chip capacitor,.3 pf ATC ATC6FR3CW25T C19, C11 Chip capacitor,.3 pf ATC ATC6FR3CW25T R11, R13 Resistor, 1 Ohm Panasonic Electronic Components ERJ-3GEYJ R12 Resistor, 5 Ohm Anaren RFP61A15Z5 U1 Hybrid coupler, 5 db, 9 Anaren X3C19P1-5S Output C1, C2, C9, C21, C211, C212 C3, C7, C8, C213, C215, C216, C217 Chip capacitor, 18 pf ATC ATC6F18JW25T Capacitor, 1 µf, 5 V Taiyo Yuden UMK325C716MM-T C4 Capacitor, 2 µf, 5 V Cornell Dubilier Electronics (CDE) SK221M5ST C5 Chip capacitor, 1.8 pf ATC ATC6F1R8CW25T C6 Chip capacitor,.3 pf ATC ATC6FR3CW25T C214 Chip capacitor,.5 pf ATC ATC6FR5CW25T Data Sheet 7 of 1 Rev. 5.1, 16-6-22
H-37248-4_pd_1-1-12 PXAC12FC Pinout Diagram (top view) S D1 Main G1 D2 Peak G2 Pin D1 D2 G1 G2 S Description Drain device 1 (main) Drain device 2 (peak) Gate device 1 (main) Gate device 2 (peak) Source (flange) See next page for package mechanical specifications Data Sheet 8 of 1 Rev. 5.1, 16-6-22
H-37248-4_po_2_1-9-13 PXAC12FC Package Outline Specifications Package H-37248-4 2X 45 X 2.72 [45 X.17] (8.89 [.35]) C L (5.8 [.]) 2X 4.83±.51 [.19±.] D1 D2 4X R.76 +.13 -.38 +.5 [ R.3 -.15 ] FLANGE 9.78 [.385] LID 9.4 [.37] C L 19.43±.51 [.765±.] G1 G2 4X 3.81 [.15] 2X 12.7 [.5] SPH 1.57 [.62] 19.81±. [.78±.8] 1.2 [.4].381 [.15] -A- 3.76±.25 [.148±.1] C L S.57 [.81] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.127 [.5]. 4. Pins: D1, D2 drain, S (flange) source, G1, G2 gate. 5. Lead thickness:.1 +.76/.25 [.4 +.3/.1]. 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Data Sheet 9 of 1 Rev. 5.1, 16-6-22
PXAC12FC V2 Revision History Revision Date Data Sheet Page Subjects (major changes in comparison with previous revision) 1 14-2-6 Advance All New product, proposed only. 2 14-3-7 Production All Data Sheet reflects released product specifications, including reference circuit and performance information. 3 14-3-12 Production 1, 2, 3, 6 (1) Add features, update graph. (2) Update Operating Gate Voltage. (3) Update two graphs. (6) Add Load Pull tables. 4 14-6-27 Production All Product now V2. 4.1 14-8-25 Production 7 Assembly diagram: position of C1 changed. 5 14-8-25 Production 2 RF Specifications at 214 MHz: values updated. 5.1 16-6-22 Production 2 Updated ordering information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerrf@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 48 776 6 International Edition 16-6-22 Published by Infineon Technologies AG 85579 Neubiberg, Germany 14 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 1 of 1 Rev. 5.1, 16-6-22
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