Delivering Modulation Solutions 1 nm band Analog Intensity The are high bandwidth intensity modulators specially designed for the transmission of analog signals over optical fibers. The MXAN-LN s performance parameters meet the requirement of the most demanding analog transmission links for military and civil applications : the x-cut design offers an unmatched stability, the low insertion loss optimizes links gain and the high linearity preserves the signal quality. They are specially suitable for microwave links and remoted antennas. Features High linearity High EO bandwidth 1, 2, 3 GHz High stability Low insertion loss Operation in C and L bands Applications RoF Antenna remoting Microwave and Radar links Space and defence systems Options 13, 1, 8 nm band versions Hermetic sealing Related equipments DR-AN RF amplifiers MBC ditherless Bias Controllers Turn-key ModBox systems MXAN-LN-1 Performance Highlights Parameter Min Typ Max Unit Operating wavelength 13-18 nm Insertion loss - 2.7 - db Electro-optical bandwidth 1 12 - GHz Vp RF @ khz -. - V 2nd harmonic suppression ratio - 7 - db Input 3rd order intercept - 3 - db Specifications given at 2 C, W, 1 nm MXAN-LN-2 Performance Highlights Parameter Min Typ Max Unit Operating wavelength 13-18 nm Insertion loss - 2.7 - db Electro-optical bandwidth 18 2 - GHz Vp RF @ khz -. - V 2nd harmonic suppression ratio - 7 - db Input 3rd order intercept - 3 - db Specifications given at 2 C, W, 1 nm p. 1/6
1 nm band Analog Intensity MXAN-LN-1 1 GHz Analog Intensity Electrical Characteristics W RF input Electro-optic bandwidth S 21 RF electrodes, from 2 GHz 1 12 - GHz Ripple S21 DS21 RF electrodes, f < 1 GHz -. 1 db Electrical return loss ES 11 RF electrodes, f < 1 GHz - -12-1 db Vp RF @ khz VpRF khz RF electrodes -. 6 V Vp RF @1 GHz VpRF 1 GHz RF electrodes - 6. 7 V Vp DC electrodes VpDC DC electrodes - 6. 7 V 2 nd harmonic suppression ratio H 1 - H 2 Measured @ GHz - 7 - db Input 3 rd order intercept IIP3 Measured @ GHz 28 3 - dbm RF input impedance Z in-rf - - 4 - W DC input impedance Z in-dc - - 1 - MW Optical Characteristics All specifications given at 2 C, 1 nm, unless differently specified Crystal - - Lithium Niobate X-Cut Y-Prop Operating wavelength l - 13 1 18 nm Insertion loss IL Without connectors - 4 db Option Low IL, without connectors - 2.7 3 db DC extinction ratio ER Measured with narrow source linewidth < 2 MHz 2 22 - db Optical return loss ORL - -4-4 - db Chirp a - -.1.1 - Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Symbol Min Max Unit RF input power EP in - 28 dbm Bias voltage V bias -2 +2 V Optical input power OP in - 2 dbm Operating temperature OT +7 C Storage temperature ST -4 +8 C p. 2/6
1 nm band Analog Intensity MXAN-LN-2 2 GHz Analog Intensity Electrical Characteristics W RF input Electro-optic bandwidth S 21 RF electrodes, from 2 GHz 18 2 - GHz Ripple S21 DS21 RF electrodes, f < 2 GHz -. 1 db Electrical return loss ES 11 RF electrodes, f < 2 GHz - -12-1 db Vp RF @ khz VpRF khz RF electrodes -. 6 V Vp RF @2 GHz VpRF 2 GHz RF electrodes - 8 8. V Vp DC electrodes VpDC DC electrodes - 6. 7 V 2 nd harmonic suppression ratio H 1 - H 2 Measured @ GHz - 7 - db Input 3 rd order intercept IIP3 Measured @ GHz 28 3 - dbm RF input impedance Z in-rf - - 4 - W DC input impedance Z in-dc - - 1 - MW Optical Characteristics All specifications given at 2 C, 1 nm, unless differently specified Crystal - - Lithium Niobate X-Cut Y-Prop Operating wavelength l - 13 1 18 nm Insertion loss IL Without connectors - 4 db Option Low IL, without connectors - 2.7 3 db DC extinction ratio ER Measured with narrow source linewidth < 2 MHz 2 22 - db Optical return loss ORL - -4-4 - db Chirp a - -.1.1 - Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Symbol Min Max Unit RF input power EP in - 28 dbm Bias voltage V bias -2 +2 V Optical input power OP in - 2 dbm Operating temperature OT +7 C Storage temperature ST -4 +8 C p. 3/6
1 nm band Analog Intensity MXAN-LN-1 Typical S21 & S11 Curves MXAN-LN-2 Typical S21 & S11 Curves Electro-optical S21 (db) - -1-1 -2 - -1-1 -2 S11 (db) Electro-optical S21 (db) - -1-1 -2 - -1-1 -2 S11 (db) -2-2 -2-2 -3-3 2 4 6 8 1 12 14 Frequency (GHz) -3 1 1 2 Frequency (GHz) -3 Input IP3 Typical curve, @7 GHz 2 Typical compression curve (MX-AN-LN-2) -12-14 Output Power (dbm) -2-4 -6-8 -1 H1 (F=7GHz) H3 (F=7GHz) Output Power (dbm) -16-18 -2-22 -24 1GHz 18GHz -12-2 -1 1 2 3 4 Input Power (dbm) -26 1 1 2 2 3 Input Power (dbm) Harmonics output, Pin = dbm -4 Harmonic suppression ratio, Pin = dbm 1 Output power (dbm) -6-8 -1-12 -14-16 H1, fundamental H2, 2nd harmonic H3, 3rd harmonic 1 2 3 4 6 7 8 9 Fundamental frequency (GHz) Harmonic suppression ratio (db) 9 8 7 6 4 3 2 1 1 2 3 4 6 7 8 9 Fundamental frequency (GHz) H1-H2 H1-H3 p. 4/6
1 nm band Analog Intensity Mechanical Diagram and pinout All measurements in mm Port Function Note IN OUT Optical input port Optical output port Polarization maintaining fiber, Corning PM 98-U2A, Length 1. meter. Buffer diameter 9 mm Polarization maintaining fiber, Corning PM 98-U2A, Length 1. meter. Buffer diameter 9 mm RF RF input port Wiltron female K (SMA compatible) 1 Ground Pin feed through diameter 1. mm 2 DC Pin feed through diameter 1. mm 3 Photodiode cathode Pin feed through diameter 1. mm 4 Photodiode anode Pin feed through diameter 1. mm Ordering information MXAN-LN-BW-XX-Y-Z-AB-CD BW = Bandwidth : 1 1 GHz 2 2 GHz XX = Internal photodiode : Not integrated PD PD Integrated Y = Input fiber : P Polarisation maintaining S Standard single mode Z = Input fiber : P Polarisation maintaining S Standard single mode AB = Output connector : bare fiber FA FC/APC FC FC/SPC CD = Output connector : bare fiber FA FC/APC FC FC/SPC Note : optical connectors are Seikoh-Giken with narrow key or equivalent p. /6
1 nm band Analog Intensity Related equipments & Examples of application Analog transmission The DR-AN is a family of wideband RF amplifier modules designed for analog applications at frequencies up to 36 GHz. They are characterized by a low Noise Figure and a linear transfer function and they match with MXAN-LN type modulator. The MBC-DG-BT is a bench top automatic bias controller specially designed to lock the operating point of LiNb 3 Mach- Zehnder modulators and ensure a stable operation over time and environmental conditions. About us Modbox-AN-Tx and ModBox-AN-Rx are a family of turnkey optical transmitters and receivers for analog applications. Analog ModBoxes operate and receive from low frequencies up to 4 GHz and from 78 nm up to 18 nm for high performances transmission. V1, PT-January-211 Photline Technologies is a provider of Fiber Optics Modulation Solutions based on the company LiNb 3 modulators and high-speed electronics modules. Photline Technologies offers high speed and high data rate modulation solutions for the telecommunication industry and the defense, aerospace, instruments and sensors markets. The products offered by the company include : comprehensive range of intensity and phase modulators (8 nm, 16 nm, 13 nm, 1 nm), RF drivers and modules, transmitters and modulation units. ZI Les Tilleroyes - Trépillot 16, rue Auguste Jouchoux - 2 Besançon - FRANCE tél. : +33 () 381 83 18 - fax : + 33 () 381 811 7 Photline Technologies reserves the right to change, at any time and without notice, the specifications, design, function or form of its products described herein. All statements, specification, technical information related to the products herein are given in good faith and based upon information believed to be reliable and accurate at the moment of printing. However the accuracy and completeness thereof is not guaranteed. No liability is assumed for any inaccuracies and as a result of use of the products. The user must validate all parameters for each application before use and he assumes all risks in connection with the use of the products. p. 6/6