UNISONIC TECHNOLOGIES CO., LTD 4 Amps,6 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N6 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-22 TO-22F FEATURES * R DS(ON) = 2.5Ω @ = V * Ultra low gate charge ( typical 5 nc ) * Low reverse transfer Capacitance ( C RSS = typical 8. pf ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 4N6L SYMBOL 2.Drain.Gate 3.Source ORDERING INFORMATION Order Number Pin Assignment Package Normal Lead Free Plating 2 3 Packing 4N6-TA3-T 4N6L-TA3-T TO-22 G D S Tube 4N6-TF3-T 4N6L-TF3-T TO-22F G D S Tube 4N6L-TA3-T ()Packing Type (2)Package Type (3)Lead Plating () T: Tube, R: Tape Reel (2) TA3: TO-22, TF3: TO-22F (3) L: Lead Free Plating, Blank: Pb/Sn of 8 Copyright 25 Unisonic Technologies Co., Ltd QW-R52-6,E
ABSOLUTE MAXIMUM RATINGS (T C = 25, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 6 V Gate-Source Voltage S ±3 V Avalanche Current - (Note ) I AR 4.4 A Continuous Drain Current T C = 25 C 4. A I D T C = C 2.8 A Pulsed Drain Current, T P Limited by T JMAX - (Note ) I DM 6 A Avalanche Energy, Single Pulsed (Note 2) E AS 26 mj Avalanche Energy, Repetitive, Limited by T JMAX E AR.6 mj Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (T C = 25 C) P D 6 W Junction Temperature T J +5 Storage Temperature T STG -55 ~ +5 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θ JA 62.5 C/W Junction-to-Case θ JC 3 C/W Case-to-Sink θ CS.5 C/W ELECTRICAL CHARACTERISTICS (T C =25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BV DSS = V, I D = 25 µa 6 V Drain-Source Leakage Current I DSS V DS = 6 V, = V µa V DS = 48 V, T C = 25 C µa Gate-Source Leakage Current Forward = 3 V, V DS = V na I GSS Reverse = -3 V, V DS = V - na Breakdown Voltage Temperature Coefficient BV DSS /T J I D = 25 µa, Referenced to 25 C.6 V/ On Characteristics Gate Threshold Voltage (TH) V DS =, I D = 25 µa 2. 4. V Drain-Source On-State Resistance R DS(ON) = V, I D = 2.2 A 2.5 Ω Forward Transconductance g FS V DS = 5 V, I D = 2.2 A (Note 4) 4. S Dynamic Characteristics Input Capacitance C ISS 52 67 pf Output Capacitance C OSS V DS = 25 V, = V, f = MHz 7 9 pf Reverse Transfer Capacitance C RSS 8 pf Switching Characteristics Turn-On Delay Time t D(ON) 3 35 ns Turn-On Rise Time t R V DD = 3V, I D = 4. A, R G = 25Ω 45 ns Turn-Off Delay Time t D(OFF) (Note 4, 5) 25 6 ns Turn-Off Fall Time t F 35 8 ns Total Gate Charge Q G 5 2 nc V DS = 48V,I D = 4.A, = V Gate-Source Charge Q GS 3.4 nc (Note 4, 5) Gate-Drain Charge 7. nc Q DD UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R52-6,E
ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage V SD = V, I S = 4.4 A.4 V Maximum Continuous Drain-Source Diode Forward Current I S 4.4 A Maximum Pulsed Drain-Source Diode Forward Current I SM 7.6 A Reverse Recovery Time t RR = V, I S = 4.4 A, 25 ns Reverse Recovery Charge Q RR di F /dt = A/µs (Note 4).5 µc. Repetitive Rating : Pulse width limited by T J 2. L = 25mH, I AS = 4.4A, V DD = 5V, R G = 25 Ω, Starting T J = 25 C 3. I SD 4.4A, di/dt 2A/µs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 3µs, Duty cycle 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 3 of 8 QW-R52-6,E
TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS + - - L R G Driver V DD Same Type as D.U.T. * dv/dt controlled by R G * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. A Peak Diode Recovery dv/dt Test Circuit (Driver) P.W. Period D= P. W. Period = V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) V DD Body Diode Forward Voltage Drop Fig. B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 8 QW-R52-6,E
TEST CIRCUITS AND WAVEFORMS (Cont.) V DS R L V DS 9% V DD R G V D.U.T. % t D(ON ) t D(OFF) Pulse Width s t R t F Duty Factor.% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 2V.2F 5k.3F Same Type as D.U.T. V Q G V DS Q GS Q GD DUT 3mA V G Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L V DS BV DSS R D V DD V D.U.T. t p IAS t p Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 8 QW-R52-6,E
TYPICAL CHARACTERISTICS Drain-Source Breakdown Voltage, BVDSS (Normalized) Breakdown Voltage Variation vs. Temperature.2...9 Note:. =V 2. ID=25µA.8 - -5 5 5 2 Junction Temperature, T J () Drain-Source On-Resistance, RDS(ON) (Normalized) On-Resistance Junction Temperature 3. 2.5 2..5..5 Note:. VGS=V 2. I D =4A. - -5 5 5 2 Junction Temperature, TJ () Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature Drain Current, I D (A). Operation in This Area is Limited by R DS(on ). T J=25 2. T J=5 3. Single Pulse DC µs ms ms Drain-Source Voltage, V DS (V) Drain Current, I D (A) 5 4 3 2 25 5 75 25 Case Temperature, T C () On-State Characteristics Transfer Characteristics Drain Current, I D (A). Top : V 9V 8V 7V 6V 5.5V 5 V Bottorm :5.V 5.V. 25µs Pulse Test 2. T C =25. Drain-to-Source Voltage, V DS (V) Drain Current, ID (A) 5 25. V DS =5V 2. 25µs Pulse Test. 2 4 6 8 Gate-Source Voltage, (V) UNISONIC TECHNOLOGIES CO., LTD 6 of 8 QW-R52-6,E
TYPICAL CHARACTERISTICS(Cont.) Drain-Source On-Resistance, RDS(ON) (ohm) Capacitance (pf) Thermal Response, θjc (t) 2 On-Resistance Variation vs. Drain Current and Gate Voltage 6 5 4 3 2 8 6 4 2.. =2V =V Note: T J =25 2 4 6 8 2 Drain Current, I D (A) Capacitance Characteristics (Non-Repetitive) C oss Ciss=Cgs+Cgd (Cds=shorted ) C oss =C ds +C gd C rss =C gd C iss C rss. =V 2. f = MHz Drain-SourceVoltage, V DS (V) Transient Thermal Response Curve. JC (t) =.8/W Max. 2. Duty Factor, D=t/t2 3.TJM-TC=PDM JC (t). E-5 E-4 E-3.. Square Wave Pulse Duration, t (sec) Reverse Drain Current, I DR (A) Gate-Source Voltage, (V) PD (w) On State Current vs. Allowable Case Temperature 5 25. =V 2. 25µs Test..2.4.6.8..2.4.6.8 Source-Drain Voltage, V SD (V) 2 8 6 4 2 2 8 6 4 2 Gate Charge Characteristics V DS=3V VDS=48V V DS =2V Note: ID=4A 5 5 2 25 Total Gate Charge, Q G (nc) Power Dissipation 2 4 6 8 24 6 TC ( C) UNISONIC TECHNOLOGIES CO., LTD 7 of 8 QW-R52-6,E
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8 QW-R52-6,E