N-Channel 3 V (-S) MOSFET 3.3 mm mm Top View PROUCT SUMMARY PowerPAK -8S 3.3 mm 3 4 S G Bottom View V S (V) 3 R S(on) max. () at V GS = V.48 R S(on) max. () at V GS = 4.5 V.6 Q g typ. (nc) 4 I (A) 5 a Configuration Single 5 6 7 8 S S FEATURES TrenchFET power MOSFET % R g and UIS tested Thin.75 mm height Typical ES performance 5 V Material categorization: for definitions of compliance please see www.vishay.com/doc?999 APPLICATIONS C/C converter Battery switch Power management For mobile computing G S N-Channel MOSFET ORERING INFORMATION Package PowerPAK -8S Lead (Pb)-free and halogen-free -T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S 3 V Gate-source voltage V GS ± T C = 5 C 5 a T C = 7 C 5 a Continuous drain current (T J = 5 C) I T A = 5 C.4 b, c A T A = 7 C 6.3 b, c Pulsed drain current (t = μs) I M Avalanche current I AS 5 L =. mh Avalanche energy E AS 3 mj T C = 5 C 43.3 Continuous source-drain diode current I S A T A = 5 C 3. b, c T C = 5 C 5 T C = 7 C 33 Maximum power dissipation P W T A = 5 C 3.8 b, c T A = 7 C b, c Operating junction and storage temperature range T J, T stg -55 to +5 C Soldering recommendations (peak temperature) d, e 6 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t s R thja 4 33 Maximum junction-to-case (drain) Steady state R thjc.9.4 C/W Notes a. Package limited b. Surface mounted on " x " FR4 board c. t = s d. See solder profile (www.vishay.com/doc?7357). The Thin PowerPAK -8S is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 8 C/W S7-45-Rev. C, 8-Sep-7 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS = V, I = 5 μa 3 - - V V S temperature coefficient V S /T J - 3 - I = 5 μa V GS(th) temperature coefficient V GS(th) /T J - -5. - mv/ C Gate-source threshold voltage V GS(th) V S = V GS, I = 5 μa -.5 V V S = V, V GS = ± V - - ± Gate-source leakage I GSS V S = V, V GS = ± V - - ± V S = 3 V, V GS = V - - Zero gate voltage drain current I SS V S = 3 V, V GS = V, T J = 55 C - - 5 μa On-state drain current a I (on) V S 5 V, V GS = V - - A rain-source on-state resistance a V GS = V, I = A -.4.48 R S(on) V GS = 4.5 V, I = 8 A -.5.6 Forward transconductance a g fs V S = 5 V, I = A - 8 - S ynamic b Input capacitance C iss - 55 - Output capacitance C oss V S = 5 V, V GS = V, f = MHz - 3 - pf Reverse transfer capacitance C rss - 75 - V S = 5 V, V GS = V, I = A - 9 45 Total gate charge Q g - 4 nc Gate-source charge Q gs V S = V, V GS = 4.5 V, I = A - 4.5 - Gate-drain charge Q gd - 4. - Gate resistance R g f = MHz...4 Turn-on delay time t d(on) - 3 Rise time t r V = 5 V, R L =.5-5 9 Turn-off delay time t d(off) I A, V GEN = 4.5 V, R g = - 4 4 Fall time t f - Turn-on delay time t d(on) - ns Rise time t r V = 5 V, R L =.5-6 4 Turn-off delay time t d(off) I A, V GEN = V, R g = - 5 4 Fall time t f - 3 8 rain-source Body iode Characteristics Continuous source-drain diode current I S T C = 5 C - - 5 Pulse diode forward current (t = μs) I SM - - A Body diode voltage V S I S = A, V GS = V -.8. V Body diode reverse recovery time t rr - 4 ns Body diode reverse recovery charge Q rr - nc I F = A, di/dt = A/μs, T J = 5 C Reverse recovery fall time t a - 8 - ns Reverse recovery rise time t b - - Notes a. Pulse test: pulse width 3 μs, duty cycle % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S7-45-Rev. C, 8-Sep-7 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I GSS - Gate Current (ma).5.4.3.. T J = 5 C I GSS - Gate Current (A) - - -3-4 -5-6 -7 T J = 5 C T J = 5 C -8. 6 8 4 3 V GS - Gate-Source Voltage (V) Gate Source Voltage vs. Gate Current -9 33 44 V GS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current 5 V GS = V thru 4 V 4 V GS = 3 V.5 3.5 T C = 5 C T C = 5 C.5.5 V S - rain-to-source Voltage (V) Output Characteristics T C = -55 C.6..8.4 3 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.75 R S(on) - On-Resistance (Ω).6.45.3 V GS = 4.5 V V GS = V C - Capacitance (pf) 68 6 84 4 C iss C oss.5 3 4 5 On-Resistance vs. rain Current C rss 6 8 4 3 V S - rain-to-source Voltage (V) Capacitance S7-45-Rev. C, 8-Sep-7 3 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I = A V S = 8 V I = A V GS = V V GS - Gate-to-Source Voltage (V) 8 6 4 V S = 5 V V S = 4 V R S(on) - On-Resistance (Normalized).65.3.95 V GS = 4.5 V 5 5 5 Q g - Total Gate Charge (nc) Gate Charge.6-5 -5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 5 4 I S - Source Current (A) T J = 5 C T J = 5 C Power (W) 3...3.6.9... 6 V S - Source-to-rain Voltage (V) Time (s) Source-rain iode Forward Voltage Single Pulse Power (Junction-to-Ambient) I = 5 μa. I = A V GS(th) (V).75.5.5 R S(on) - On-Resistance (Ω).9.6.3 T J = 5 C T J = 5 C -5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage. 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S7-45-Rev. C, 8-Sep-7 4 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Limited by R S(on) () μs. ms ms ms s, s C,. T A = 5 C Single pulse BVSS limited.. V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient 64 9 48 7 Power (W) 3 6 54 36 8 5 5 75 5 5 T C - Case Temperature ( C) Power Junction-to-Case 5 5 75 5 5 T C - Case Temperature ( C) Current erating a Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S7-45-Rev. C, 8-Sep-7 5 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. uty cycle =.5...5. Single pulse 3. T JM - T A = P M Z (t) thja 4. Surface mounted. -4-3 - - 6 Square Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t t. uty cycle, = t. Per unit base = R thja = 8 C/W Normalized Effective Transient Thermal Impedance. uty cycle =.5.. Single pulse.5.. -4-3 - - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?6867. S7-45-Rev. C, 8-Sep-7 6 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information PowerPAK -8T MILLIMETERS INCHES IM. MIN. NOM. MAX. MIN. NOM. MAX. A.7.75.8.8.3.3 A. -.5. -. b.3.3.4.9..6 c.3.8.33.9..3 3. 3.3 3.4.6.3.34.95 3.5 3.5.6..4.98..4.78.83.88 3.48 -.89.9 -.35 4.47 TYP..85 TYP. 5.3 TYP..9 TYP. E 3. 3.3 3.4.6.3.34 E.95 3.5 3.5.6..4 E.47.6.73.58.63.68 E3.75.85.98.69.73.78 E4.34 TYP..3 TYP. e.65 BSC.6 BSC K.86 TYP..34 TYP. K.35 - -.4 - - H.3.4.5..6. L.3.43.56..7. L.6.3...5.8 - - W.5.5.36.6..4 M.5 TYP..5 TYP. ECN: T3-56-Rev. A, 8-Feb-3 WG: 6 Revison: 8-Feb-3 ocument Number: 6836 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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