Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ±2 V Drain current I D 45 A Drain peak current I D(pulse) * 1 18 A Body to drain diode reverse drain current I DR 45 A Channel dissipation Pch* 2 15 W Channel temperature Tch 15 C Storage temperature Tstg 55 to +15 C Notes 1. PW 1 µs, duty cycle 1% 2. Value at T C = 25 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = 1 ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ±2 V I G = ±1 µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS 25 µa V DS = 5 V, V GS = Gate to source cutoff voltage V GS(off) 1. 2. V I D = 1 ma, V DS = 1 V Static drain to source on state R DS(on).33.42 Ω I D = 2 A, V GS = 1 V* 1 resistance.45.6 I D = 2 A, V GS = 4 V* 1 Forward transfer admittance y fs 16 25 S I D = 2 A, V DS = 1 V* 1 Input capacitance Ciss 38 pf V DS = 1 V, V GS =, Output capacitance Coss 2 pf f = 1 MHz Reverse transfer capacitance Crss 49 pf Turn-on delay time t d(on) 3 ns I D = 2 A, V GS = 1 V, Rise time t r 235 ns R L = 1.5 Ω Turn-off delay time t d(off) 67 ns Fall time t f 45 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test V DF 1.35 V I F = 45 A, V GS = t rr 3 ns I F = 45 A, V GS =, di F /dt = 5 A/µs 2
Channel Dissipation Pch (W) 15 1 5 Power vs. Temperature Derating 5 1 15 Case Temperature T C ( C) 2 1 5 2 1 5 2 1 Maximum Safe Operation Area Operation in this area is limited by R DS (on) Ta = 25 C 1 ms 1 µs 1 µs PW = 1 ms (1 shot) DC Operation (T C = 25 C) 2 5 1 2 5 1 Drain to Source Voltage V DS (V) 1 8 6 4 2 Typical Output Characteristics 1 V 6 V 5 V 4 V 3 V Typical Forward Transfer Characteristics 5 T C = 25 C 4 3 2 1 V DS = 1 V 25 C 75 C V GS = 2 V 4 8 12 16 2 Drain to Source Voltage V DS (V) 1 2 3 4 5 Gate to Source Voltage V GS (V) 3
Drain to Source Saturation Voltage V DS (on) (V) 2.5 2. 1.5 1..5 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 A 2 A I D = 1 A 2 4 6 8 1 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω).5.2.1.5.2.1 Static Drain to Source on State Resistance vs. Drain Current V GS = 4 V 1 V.5 2 5 1 2 5 1 2 Static Drain to Source on State Resistance R DS (on) (Ω).1.8.6.4.2 4 Static Drain to Source on State Resistance vs. Temperature V GS = 4 V V GS = 1 V I D = 2 A 1 A I D = 5 A 1, 2 A 4 8 12 16 Case Temperature T C ( C) Forward Transfer Admittance yfs (ns) 2 1 5 2 1 5 2.5 Forward Transfer Admittance vs. Drain Current V DS = 1 V 25 C T C = 25 C 75 C 1 2 5 1 2 5
Reverse Recovery Time t rr (ns) 5, 2, 1, 5 2 1 5.5 Body to Drain Diode Reverse Recovery Time di/dt = 5 A/µs, V GS = Ta = 25 C 1 2 5 1 2 5 Reverse Drain Current I DR (A) Capacitance C (pf) 1, 5, 2, 1, 5 2 1 V GS = f = 1 MHz Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss 1 2 3 4 5 Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 2 4 6 8 1 Dynamic Input Characteristics V DS V DD = 1 V 25 V 5 V I D = 45 A V DD = 1 V 25 V 5 V V GS 2 4 8 12 16 2 Gate Charge Qg (nc) 4 8 12 16 Gate to Source Voltage V GS (V) Switching Time t (ns) 1, 5 2 1 5 2 1.5 Switching Characteristics t f t r t d (on) V GS = 1 V, PW = 2 µs V DD 3 V, duty 1% =.. < = t d (off) 1 2 5 1 2 5
1 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 8 6 4 2 1 V 5 V V GS =,5 V.5 1. 1.5 2. 2.5 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) 3 1.3.1.3.1 1 µ D = 1.5.2.1.5.2.1 1 Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width T C = 25 C θch c (t) = γ S (t) θch c θch c =.83 C/W, T C = 25 C T PW 1 µ 1 m 1 m 1 m 1 1 Pulse Width PW (s) P DM D = PW T
Switching Time Test Circuit Switching Time Test Waveforms Vin Monitor Vout Monitor Vin 1% D.U.T. 9% R L 9% 9% Vin 1 V 5 Ω V DD = 3 V Vout 1% 1% t d (on) t r t d (off) t f 7
15.6 ±.3 φ3.2 ±.2 1. 5. ±.3 4.8 ±.2 1.5 Unit: mm.5 1.6 1.4 Max 2. 2. 14.9 ±.2 18. ±.5 19.9 ±.2.3 2.8 1. ±.2.6 ±.2 3.6.9 1. 5.45 ±.5 5.45 ±.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5. g
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