Rev. 5 April 27 Product data sheet. Product profile. General description NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table. Product overview Type number Package NPN/NPN PNP/PNP NXP Name complement complement SOT96- SO8 PBSS435SS PBSS535SS.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain (h FE ) at high I C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.3 Applications Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR; NPN low V CEsat transistor V CEO collector-emitter voltage open base - - 5 V I C collector current - - 2.7 A I CM peak collector current single pulse; - - 5 A t p ms R CEsat collector-emitter saturation resistance I C =2A; I B = 2 ma - 9 3 mω
Table 2. 2. Pinning information TR2; PNP low V CEsat transistor V CEO collector-emitter voltage open base - - 5 V I C collector current - - 2.7 A I CM peak collector current single pulse; t p ms - - 5 A R CEsat Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit collector-emitter saturation resistance Pulse test: t p 3 µs; δ.2. I C = 2 A; I B = 2 ma - 95 4 mω 3. Ordering information Table 3. Pinning Pin Description Simplified outline Symbol emitter TR 2 base TR 8 5 8 7 6 5 3 emitter TR2 4 base TR2 TR TR2 5 collector TR2 4 2 3 4 6 collector TR2 6aaa985 7 collector TR 8 collector TR 4. Marking Table 4. Type number Ordering information Package Name Description Version SO8 plastic small outline package; 8 leads; body width SOT96-3.9 mm Table 5. Marking codes Type number Marking code 435SPN _ Product data sheet Rev. 5 April 27 2 of 9
5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter - 5 V V CEO collector-emitter voltage open base - 5 V V EBO emitter-base voltage open collector - 5 V I C collector current - 2.7 A I CM peak collector current single pulse; - 5 A t p ms I B base current -.5 A P tot total power dissipation T amb 25 C -.55 W [2] -.87 W [3] -.43 W Per device P tot total power dissipation T amb 25 C -.75 W [2] -.2 W [3] - 2 W T j junction temperature - 5 C T amb ambient temperature 65 +5 C T stg storage temperature 65 +5 C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. _ Product data sheet Rev. 5 April 27 3 of 9
2.5 6aaa967 P tot (W) 2..5..5 75 25 25 75 25 75 T amb ( C) Ceramic PCB, Al 2 O 3, standard footprint FR4 PCB, mounting pad for collector cm 2 FR4 PCB, standard footprint Fig. Per device: Power derating curves _ Product data sheet Rev. 5 April 27 4 of 9
6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R th(j-a) thermal resistance from in free air - - 227 K/W junction to ambient [2] - - 44 K/W [3] - - 87 K/W R th(j-sp) thermal resistance from junction to solder point Per device R th(j-a) thermal resistance from junction to ambient - - 4 K/W in free air - - 67 K/W [2] - - 4 K/W [3] - - 63 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. 3 Z th(j-a) (K/W) 2 duty cycle =..75.5.33.2..5.2. 6aaa89 5 4 3 2 2 3 t p (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev. 5 April 27 5 of 9
3 Z th(j-a) (K/W) 2 duty cycle =..75.5.33.2..5.2. 6aaa8 5 4 3 2 2 3 t p (s) Fig 3. FR4 PCB, mounting pad for collector cm 2 Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 6aaa8 Z th(j-a) (K/W) 2 duty cycle =..75.5.33.2..5.2. 4 3 2 2 3 t p (s) Fig 4. Ceramic PCB, Al 2 O 3, standard footprint Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev. 5 April 27 6 of 9
7. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR; NPN low V CEsat transistor I CBO collector-base cut-off current V CB =5V; I E = A - - na V CB =5V; I E =A; - - 5 µa T j = 5 C I CES collector-emitter V CE =5V; V BE = V - - na cut-off current I EBO emitter-base cut-off V EB =5V; I C = A - - na current h FE DC current gain V CE =2V; I C = ma 3 52 - V CE =2V; I C = 5 ma 3 5 - V CE =2V; I C =A 3 47 - V CE =2V; I C =2A 2 34 - V CE =2V; I C = 2.7 A 2 8 - V CEsat collector-emitter saturation voltage I C =.5 A; I B = 5 ma - 5 8 mv I C = A; I B = 5 ma - 6 mv I C = 2 A; I B = ma - 9 28 mv I C = 2 A; I B = 2 ma - 8 26 mv I C = 2.7 A; I B = 27 ma - 24 34 mv R CEsat collector-emitter I C = 2 A; I B = 2 ma - 9 3 mω saturation resistance V BEsat base-emitter saturation voltage I C = 2 A; I B = ma -.95. V I C = 2.7 A; I B = 27 ma -..2 V V BEon base-emitter turn-on V CE =2V; I C =A -.8.2 V voltage t d delay time V CC =V; I C =2A; - 8 - ns t I Bon = ma; r rise time - 96 - ns I Boff = ma t on turn-on time - 4 - ns t s storage time - 355 - ns t f fall time - 65 - ns t off turn-off time - 52 - ns C c collector capacitance V CB =V; I E =i e =A; f=mhz - 8 25 pf _ Product data sheet Rev. 5 April 27 7 of 9
Table 8. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR2; PNP low V CEsat transistor I CBO collector-base cut-off current Pulse test: t p 3 µs; δ.2. V CB = 5 V; I E =A - - na V CB = 5 V; I E =A; - - 5 µa T j = 5 C I CES collector-emitter V CE = 5 V; V BE =V - - na cut-off current I EBO emitter-base cut-off V EB = 5 V; I C =A - - na current h FE DC current gain V CE = 2 V; I C = ma 2 34 - V CE = 2 V; I C = 5 ma 2 29 - V CE = 2 V; I C = A 8 25 - V CE = 2 V; I C = 2 A 3 8 - V CE = 2 V; I C = 2.7 A 95 35 - V CEsat collector-emitter saturation voltage I C =.5 A; I B = 5 ma - 6 9 mv I C = A; I B = 5 ma - 25 8 mv I C = 2 A; I B = ma - 225 32 mv I C = 2 A; I B = 2 ma - 9 28 mv I C = 2.7 A; I B = 27 ma - 255 37 mv R CEsat collector-emitter I C = 2 A; I B = 2 ma - 95 4 mω saturation resistance V BEsat base-emitter saturation voltage I C = 2 A; I B = ma -.95. V I C = 2.7 A; I B = 27 ma -.2 V V BEon base-emitter turn-on V CE = 2 V; I C = A -.8.2 V voltage t d delay time V CC = V; I C = 2 A; - 9 - ns t I Bon = ma; r rise time - 54 - ns I Boff = ma t on turn-on time - 63 - ns t s storage time - 9 - ns t f fall time - 5 - ns t off turn-off time - 24 - ns C c collector capacitance V CB = V; I E =i e =A; f=mhz - 25 35 pf _ Product data sheet Rev. 5 April 27 8 of 9
h FE 8 6aaa968 I C (A) 5 4 I B (ma) = 9 8 7 6 5 6aaa969 6 3 4 3 2 4 2 2 2 3 4.4.8.2.6 2. V CE (V) Fig 5. V CE =2V T amb = C T amb =25 C T amb = 55 C TR (NPN): DC current gain as a function of collector current; typical values Fig 6. T amb =25 C TR (NPN): Collector current as a function of collector-emitter voltage; typical values.2 6aaa97.4 6aaa97 V BE (V) V BEsat (V).8..4.6 Fig 7. 2 3 4 V CE =2V T amb = 55 C T amb =25 C T amb = C TR (NPN): Base-emitter voltage as a function of collector current; typical values Fig 8..2 2 3 4 I C /I B =2 T amb = 55 C T amb =25 C T amb = C TR (NPN): Base-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev. 5 April 27 9 of 9
6aaa972 6aaa973 V CEsat (V) V CEsat (V) 2 2 3 2 3 4 3 2 3 4 I C /I B =2 T amb = C T amb =25 C T amb = 55 C Fig 9. TR (NPN): Collector-emitter saturation voltage as a function of collector current; typical values T amb =25 C I C /I B = I C /I B =5 I C /I B = Fig. TR (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 3 6aaa974 3 6aaa975 R CEsat (Ω) R CEsat (Ω) 2 2 2 2 3 4 I C /I B =2 T amb = C T amb =25 C T amb = 55 C Fig. TR (NPN): Collector-emitter saturation resistance as a function of collector current; typical values 2 2 3 4 T amb =25 C I C /I B = I C /I B =5 I C /I B = Fig 2. TR (NPN): Collector-emitter saturation resistance as a function of collector current; typical values _ Product data sheet Rev. 5 April 27 of 9
h FE 6 4 6aaa977 5 I C (A) 4 3 I B (ma) = 4 26 2 98 84 7 56 6aaa978 42 28 4 2 2 2 3 4 V CE = 2 V T amb = C T amb =25 C T amb = 55 C Fig 3. TR2 (PNP): DC current gain as a function of collector current; typical values.4.8.2.6 2. V CE (V) T amb =25 C Fig 4. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values.2 6aaa979.4 6aaa98 V BE (V) V BEsat (V).8..4.6 2 3 4 V CE = 2 V T amb = 55 C T amb =25 C T amb = C Fig 5. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values.2 2 3 4 I C /I B =2 T amb = 55 C T amb =25 C T amb = C Fig 6. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev. 5 April 27 of 9
6aaa98 6aaa982 V CEsat (V) V CEsat (V) 2 2 3 2 3 4 I C /I B =2 T amb = C T amb =25 C T amb = 55 C Fig 7. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 3 2 3 4 T amb =25 C I C /I B = I C /I B =5 I C /I B = Fig 8. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 3 6aaa983 3 6aaa984 R CEsat (Ω) R CEsat (Ω) 2 2 2 2 3 4 I C /I B =2 T amb = C T amb =25 C T amb = 55 C Fig 9. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 2 2 3 4 T amb =25 C I C /I B = I C /I B =5 I C /I B = Fig 2. TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values _ Product data sheet Rev. 5 April 27 2 of 9
8. Test information I B 9 % input pulse (idealized waveform) I Bon ( %) % I Boff I C output pulse (idealized waveform) 9 % I C ( %) % t t d t r t s t f ton toff 6aaa3 Fig 2. TR (NPN): BISS transistor switching time definition V BB V CC R B R C oscilloscope (probe) 45 Ω V o (probe) 45 Ω oscilloscope V I R2 DUT R mlb826 V CC =V; I C = 2 A; I Bon = ma; I Boff = ma Fig 22. TR (NPN): Test circuit for switching times _ Product data sheet Rev. 5 April 27 3 of 9
I B 9 % input pulse (idealized waveform) I Bon ( %) % I Boff I C output pulse (idealized waveform) 9 % I C ( %) % t t d t r t s toff t f ton 6aaa266 Fig 23. TR2 (PNP): BISS transistor switching time definition V BB V CC R B R C oscilloscope (probe) 45 Ω V o (probe) 45 Ω oscilloscope V I R2 DUT R mgd624 V CC = V; I C = 2 A; I Bon = ma; I Boff = ma Fig 24. TR2 (PNP): Test circuit for switching times _ Product data sheet Rev. 5 April 27 4 of 9
9. Package outline 5. 4.8.75 6.2 5.8 4. 3.8 pin index..4.27 Dimensions in mm.49.36.25.9 3-2-8 Fig 25. Package outline SOT96- (SO8). Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. Type number Package Description Packing quantity 25 SOT96-8 mm pitch, 2 mm tape and reel -5-8 For further information and the availability of packing methods, see Section 4. _ Product data sheet Rev. 5 April 27 5 of 9
. Soldering 5.5.6 (8 ).3 4. 6.6 7..27 (6 ) solder lands occupied area placement accuracy ±.25 Dimensions in mm sot96-_fr Fig 26. Reflow soldering footprint SOT96- (SO8).2 (2 ).6 (6 ).3 (2 ) enlarged solder land.3 4. 6.6 7..27 (6 ) 5.5 board direction solder lands solder resist occupied area placement accurracy ±.25 Dimensions in mm sot96-_fw Fig 27. Wave soldering footprint SOT96- (SO8) _ Product data sheet Rev. 5 April 27 6 of 9
2. Revision history Table. Revision history Document ID Release date Data sheet status Change notice Supersedes _ 2745 Product data sheet - - _ Product data sheet Rev. 5 April 27 7 of 9
3. Legal information 3. Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 3.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 3.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 3.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 4. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com _ Product data sheet Rev. 5 April 27 8 of 9
5. Contents Product profile........................... General description.......................2 Features...............................3 Applications............................4 Quick reference data..................... 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics................... 5 7 Characteristics.......................... 7 8 Test information........................ 3 9 Package outline........................ 5 Packing information..................... 5 Soldering............................. 6 2 Revision history........................ 7 3 Legal information....................... 8 3. Data sheet status...................... 8 3.2 Definitions............................ 8 3.3 Disclaimers........................... 8 3.4 Trademarks........................... 8 4 Contact information..................... 8 5 Contents.............................. 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 April 27 Document identifier: _