High oltage Transistor Collector-Emitter oltage: CEO =KSP42: KSP43: Collector Power Dissipation: P C (max)=625mw NPN Epitaxial Silicon Transistor TO-92. Emitter 2. Base 3. Collector Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector Base oltage CEO Collector-Emitter oltage EBO Emitter-Base oltage 6 I C Collector Current 500 ma P C Collector Power Dissipation 625 mw T J Junction Temperature 50 C T STG Storage Temperature -55 ~ 50 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units B CBO Collector-Base Breakdown oltage I C =µa, I E =0 B CEO * Collector -Emitter Breakdown oltage * Pulse Test: PW µs, Duty Cycle 2% I C =ma, I B =0 B EBO Emitter-Base Breakdown oltage I E =µa, I C =0 6 I CBO Collector Cut-off Current CB =, I E =0 CB =60, I E =0 I EBO Emitter Cut-off Current BE =6, I C =0 BE =4, I C =0 h FE * DC Current Gain CE =, I C =ma CE =, I C =ma CE =, I C =30mA CE (sat) * Collector-Emitter Saturation oltage I C =20mA, I B =2mA 0.5 BE (sat) * Base-Emitter Saturation oltage I C =20mA, I B =2mA 0.9 C ob Output Capacitance CB =20, I E =0 f=mhz 3 4 pf pf f T Current Gain Bandwidth Product CE =20, I C =ma f=mhz 50 MHz 25 2 Fairchild Semiconductor Corporation Rev. A2, September 2
Typical Characteristics hfe, DC CURRENT GAIN 0 CE = BE(sat), CE(sat)[], SATURATION OLTAGE 0. BE(sat) CE(sat) 0.0 IC = IB Figure. DC current Gain Figure 2. Collector-Emitter Saturation oltage Base-Emitter Saturation oltage Ccb [pf], CAPACITANCE IE = 0 f = MHz 0. ft[mhz], CURRENT GAIN BANDWIDTH PRODUCT 20 80 60 20 CE = 20 0 CB [], COLLECTOR-BASE OLTAGE Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product 2 Fairchild Semiconductor Corporation Rev. A2, September 2
Package Dimensions TO-92 4.58 +0.25 0.5 3.86MAX 0.46 ±0..27TYP [.27 ±0.20].02 ±0. 0.38 +0. 0.05.27TYP [.27 ±0.20] 3.60 ±0.20 (R2.29) (0.25) 4.47 ±0. 4.58 ±0.20 0.38 +0. 0.05 Dimensions in Millimeters 2 Fairchild Semiconductor Corporation Rev. A2, September 2
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