BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Collector-Emitter Voltage CollectorBase Voltage EmitterBase Voltage Rating Symbol Value Unit BC846 BC847, BC85 BC848, BC849 BC846 BC847, BC85 BC848, BC849 BC846 BC847, BC85 BC848, BC849 V CEO 65 45 3 V CBO 8 5 3 V EBO 6. 6. 5. Vdc Vdc Vdc Collector Continuous I C madc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, (Note ) T A = Derate above Thermal Resistance, JunctiontoAmbient (Note ) P D 225.8 mw mw/ C R JA 556 C/W BASE SOT23 CASE 38 STYLE 6 MARKING DIAGRAM COLLECTOR 3 2 XX M 2 EMITTER XX = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 3 Total Device Dissipation Alumina Substrate (Note 2) T A = Derate above Thermal Resistance, JunctiontoAmbient (Note 2) P D 3 mw 2.4 mw/ C R JA 47 C/W Junction and Storage Temperature Range T J, T stg. FR5 =..75.62 in. 2. Alumina =.4.3.24 in 99.5% alumina. 55 to +5 C Semiconductor Components Industries, LLC, 994 January, 27 Rev. 7 Publication Order Number: BC846ALT/D
BC846ALTG Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage BC846A, B V (BR)CEO 65 V ( ma) BC847A, B, C, BC85B, C BC848A, B, C, BC849B, C 45 3 CollectorEmitter Breakdown Voltage BC846A, B ( A, V EB = ) BC847A, B, C BC85B, C BC848A, B, C, BC849B, C CollectorBase Breakdown Voltage BC846A, B ( A) BC847A, B, C, BC85B, C BC848A, B, C, BC849B, C EmitterBase Breakdown Voltage BC846A, B (I E =. A) BC847A, B, C, BC85B, C BC848A, B, C, BC849B, C Collector Cutoff (V CB = 3 V) (V CB = 3 V, T A = ) V (BR)CES 8 5 3 V (BR)CBO 8 5 3 V (BR)EBO 6. 6. 5. I CBO 5 5. V V V na A ON CHARACTERISTICS DC Gain BC846A, BC847A, BC848A ( A, V CE = 5. V) BC846B, BC847B, BC848B BC847C, BC848C h FE 9 5 27 ( 2. ma, V CE = 5. V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC85B BC847C, BC848C, BC849C, BC85C 2 42 8 29 52 22 45 8 CollectorEmitter Saturation Voltage ( ma, I B =.5 ma) CollectorEmitter Saturation Voltage ( ma, I B = 5. ma) V CE(sat).25.6 V BaseEmitter Saturation Voltage ( ma, I B =.5 ma) BaseEmitter Saturation Voltage ( ma, I B = 5. ma) V BE(sat).7.9 V BaseEmitter Voltage ( 2. ma, V CE = 5. V) BaseEmitter Voltage ( ma, V CE = 5. V) V BE(on) 58 66 7 77 mv SMALLSIGNAL CHARACTERISTICS Gain Bandwidth Product ( ma, V CE = 5. Vdc, f = MHz) f T MHz Output Capacitance (V CB = V, f =. MHz) C obo 4.5 pf Noise Figure (.2 ma, V CE = 5. Vdc, R S = 2. k, f =. khz, BW = 2 Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC85B,C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NF 4. db 2
BC846ALTG Series BC846A, BC847A, BC848A, SBC846A 3 V CE = V 3 V CE = 5 V 2 55 C 2 55 C Figure. DC Gain vs. Collector Figure 2. DC Gain vs. Collector V CE(sat), COLLECTOREMITTER 8 6 4 2.8.6.4.2. I C /I B = 2 55 C Figure 3. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASEEMITTER..9 I C /I B = 2.8.7.6.5.4.3.2. 55 C V BE(on), BASEEMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2. 55 C Figure 4. Base Emitter Saturation Voltage vs. Collector Figure 5. Base Emitter Voltage vs. Collector 3
BC846ALTG Series BC846A, BC847A, BC848A, SBC846A VCE, COLLECTOR-EMITTER VOLTAGE (V) 2..6.2.8.4 ma 2 ma 5 ma T A =.2. I B, BASE CURRENT (ma) 2 ma ma 2 VB, TEMPERATURE COEFFICIENT (mv/ C) θ. -55 C to +.2.6 2. 2.4 2.8.2. I C, COLLECTOR CURRENT (ma) Figure 6. Collector Saturation Region Figure 7. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5. 3. 2. C ib..4.6.8. 2. 4. 6. 8. 2 4 C ob V R, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitances T A = f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 3 2 8 6 4 3 2.5.7. 2. 3. 5. 7. 2 3 5 I C, COLLECTOR CURRENT (madc) V CE = V T A = Figure 9. Gain Bandwidth Product 4
BC846ALTG Series BC846B, SBC846B 6 5 4 3 2 55 C V CE = V 6 5 4 3 2 55 C V CE = 5 V Figure. DC Gain vs. Collector Figure. DC Gain vs. Collector V CE(sat), COLLECTOREMITTER.3.25.2 5.5 I C /I B = 2 55 C. Figure 2. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASEEMITTER...9.8.7.6.5.4.3.2. I C /I B = 2 55 C V BE(on), BASEEMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2. 55 C Figure 3. Base Emitter Saturation Voltage vs. Collector Figure 4. Base Emitter Voltage vs. Collector 5
BC846ALTG Series BC846B, SBC846B VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2..6.2.8.4 2 ma ma 5 ma ma.2.5.2.5. 2. 5. I B, BASE CURRENT (ma) T A = 2 ma 2 VB, TEMPERATURE COEFFICIENT (mv/ C) θ..4.8 VB for V BE -55 C to 2.2 2.6 3..2.5. 2. 5. 2 5 2 I C, COLLECTOR CURRENT (ma) Figure 5. Collector Saturation Region Figure 6. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 4 T A = 2 C ib 6. 4. C ob 2..2.5. 2. 5. 2 5 V R, REVERSE VOLTAGE (VOLTS) f, T CURRENT-GAIN - BANDWIDTH PRODUCT 5 2 5 2 V CE = 5 V T A =. 5. 5 I C, COLLECTOR CURRENT (ma) Figure 7. Capacitance Figure 8. Gain Bandwidth Product 6
BC846ALTG Series BC847B, BC848B, BC849B, BC85B, SBC847B, SBC848B 6 5 4 3 2 55 C V CE = V 6 5 4 3 2 55 C V CE = 5 V Figure 9. DC Gain vs. Collector Figure 2. DC Gain vs. Collector V CE(sat), COLLECTOREMITTER.3.25.2 5.5 I C /I B = 2 55 C. Figure 2. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASEEMITTER...9.8.7.6.5.4.3.2. I C /I B = 2 55 C V BE(on), BASEEMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2. 55 C Figure 22. Base Emitter Saturation Voltage vs. Collector Figure 23. Base Emitter Voltage vs. Collector 7
BC846ALTG Series BC847B, BC848B, BC849B, BC85B, SBC846B, SBC847B, SBC848B VCE, COLLECTOR-EMITTER VOLTAGE (V) 2..6.2.8.4 ma 2 ma 5 ma T A =.2. I B, BASE CURRENT (ma) 2 ma ma 2 VB, TEMPERATURE COEFFICIENT (mv/ C) θ..2.6 2. 2.4 2.8-55 C to +.2. I C, COLLECTOR CURRENT (ma) Figure 24. Collector Saturation Region Figure 25. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5. 3. 2. C ib..4.6.8. 2. 4. 6. 8. 2 4 C ob V R, REVERSE VOLTAGE (VOLTS) T A = f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 3 2 8 6 4 3 2.5.7. 2. 3. 5. 7. 2 3 5 I C, COLLECTOR CURRENT (madc) V CE = V T A = Figure 26. Capacitances Figure 27. Gain Bandwidth Product 8
BC846ALTG Series BC847C, BC848C, BC849C, BC85C, SBC847C 9 8 7 6 5 4 3 2 55 C V CE = V 9 8 7 6 5 4 3 2 55 C V CE = 5 V Figure 28. DC Gain vs. Collector Figure 29. DC Gain vs. Collector V CE(sat), COLLECTOREMITTER.3.25.2 5.5 I C /I B = 2 55 C. Figure 3. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASEEMITTER...9.8.7.6.5.4.3.2. I C /I B = 2 55 C V BE(on), BASEEMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2. 55 C Figure 3. Base Emitter Saturation Voltage vs. Collector Figure 32. Base Emitter Voltage vs. Collector 9
BC846ALTG Series BC847C, BC848C, BC849C, BC85C, SBC847C VCE, COLLECTOR-EMITTER VOLTAGE (V) 2..6.2.8.4 ma 2 ma 5 ma T A =.2. I B, BASE CURRENT (ma) 2 ma ma 2 VB, TEMPERATURE COEFFICIENT (mv/ C) θ..2.6 2. 2.4 2.8-55 C to +.2. I C, COLLECTOR CURRENT (ma) Figure 33. Collector Saturation Region Figure 34. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5. 3. 2. C ib..4.6.8. 2. 4. 6. 8. 2 4 C ob V R, REVERSE VOLTAGE (VOLTS) T A = f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 3 2 8 6 4 3 2.5.7. 2. 3. 5. 7. 2 3 5 I C, COLLECTOR CURRENT (madc) V CE = V T A = Figure 35. Capacitances Figure 36. Gain Bandwidth Product
BC846ALTG Series Thermal Limit S ms ms ms ms ms ms S Thermal Limit V CE, COLLECTOR EMITTER VOLTAGE (V) V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 37. Safe Operating Area for BC846A, BC846B Figure 38. Safe Operating Area for BC847A, BC847B, BC847C, BC85B, BC85C ms ms ms S Thermal Limit V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C
BC846ALTG Series ORDERING INFORMATION BC846ALTG SBC846ALTG* BC846ALT3G BC846BLTG SBC846BLTG* BC846BLT3G SBC846BLT3G* BC847ALTG BC847ALT3G BC847BLTG SBC847BLTG* BC847BLT3G NSVBC847BLT3G* BC847CLTG SBC847CLTG* Device Marking Package Shipping A B E F G 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel BC847CLT3G SOT23, / Tape & Reel BC848ALTG J (PbFree) 3, / Tape & Reel BC848BLTG SBC848BLTG* BC848BLT3G BC848CLTG NSVBC848CLTG* BC848CLT3G BC849BLTG NSVBC849BLTG* BC849BLT3G BC849CLTG BC849CLT3G BC85BLTG NSVBC85BLTG* BC85CLTG NSVBC85CLTG* K L 2B 2C 2F 2G 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel, / Tape & Reel 3, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable. 2
BC846ALTG Series PACKAGE DIMENSIONS SOT23 (TO236) CASE 388 ISSUE AR A E A D 3 2 e TOP VIEW SIDE VIEW HE L 3X b L VIEW C SEE VIEW C c END VIEW T.25 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89...35.39.44 A.6..2.4 b.37.44.5 5 7.2 c.8 4.2.3.6.8 D 2.8 2.9 3.4 4 2 E.2.3.4.47.5.55 e.78.9 2.4.7.75.8 L.3.43.55 2 7.22 L.35.54.69 4.2.27 H E 2. 2.4 2.64.83.94 4 T STYLE 6: PIN. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 2.9 3X.9 3X.8.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: 33675275 or 8344386 Toll Free USA/Canada Fax: 33675276 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 835875 3 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative BC846ALT/D