Doc No. TT4-ZZ-004 Revision. Established : 06--09 FCAB50L FCAB50L Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits Unit: mm Features Source-source ON resistance:rss(on) typ. =.6 m (VGS = 3.8 V) CSP(Chip Size Package) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level ) Marking Symbol: 7T Packaging Embossed type (Thermo-compression sealing) : 000 pcs / reel (standard) Absolute Maximum Ratings Ta = Parameter Source-source Voltage Gate-source Voltage Source Current Total Power Dissipation Channel Temperature Storage Temperature Range Thermal Resistance (ch-a),,4,5. Source(FET) 3. Gate (FET) 6,7,9,0. Source(FET) 8. Gate (FET) Panasonic TCSP8350-N Symbol Rating Unit JEITA VSS V Code VGS 8 V DC * IS 6 A DC * IS 35 A Equivalent Circuit Pulse *3 ISp 60 A DC * PD 0.54 W DC * PD 3.8 W 6,7,9,0(S) 8(G) Tch 50 C Tstg -55 to +50 C FET Rth * 3 C/W Rth * 33 C/W Note * Mounted on FR4 board ( 5.4 mm 5.4 mm t.0 mm ) FET using the minimum recommended pad size (36 m Copper ). * Mounted on Ceramic substrate (70 mm 70 mm t.0 mm). *3 t = 0 s, Duty Cycle %,,4,5(S) 3(G) Page of 5
Doc No. TT4-ZZ-004 Revision. Established : 06--09 FCAB50L Electrical Characteristics Ta = 3 C Parameter Symbol Conditions Min Typ Max Unit Source-source Breakdown Voltage VSSS IS =.0 ma, VGS = 0 V V Zero Gate Voltage Source Current ISSS VSS = V, VGS = 0 V.0 A Gate-source Leakage Current IGSS VGS = 8 V, VSS = 0 V 0 VGS = 5 V, VSS = 0 V.0 A Gate-source Threshold Voltage Vth IS =.64 ma, VSS = 0 V 0.35 0.90.40 V RSS(on) IS = 8.0 A, VGS = 4.5 V..45.0 Source-source On-state Resistance RSS(on) IS = 8.0 A, VGS = 3.8 V.5.6. RSS(on)3 IS = 8.0 A, VGS = 3. V..8 3.0 m RSS(on)4 IS = 8.0 A, VGS =.5 V.4.3 4.5 Body Diode Forward Voltage VF(s-s) IF = 8.0 A, VGS = 0 V 0.7. V Input Capacitance * Ciss 550 Output Capacitance * Coss VSS = 0 V, VGS = 0 V, f = khz 700 pf Reverse Transfer Capacitance * Crss 630 Turn-on Delay Time *,* td(on) VDD = 6.0 V, VGS = 0 to 4.0 V.5 Rise Time *,* tr IS = 8.0 A.6 s Turn-off Delay Time *,* td(off) VDD = 6.0 V, VGS = 4.0 to 0 V 6.8 Fall Time *,* tf IS = 8.0 A 4. s Total Gate Charge * Qg VDD = 6.0 V 38 Gate-source Charge * Qgs VGS = 0 to 4.0 V 0 nc Gate-drain Charge * Qgd IS = 8.0 A 0 Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. * Guaranteed by design, not subject to production testing * Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note:Measurement circuit VDD = 6.0 V IS = 8.0 A RL = 0.75 S Vout Vin 90 % Rg 0 % Vin G G Rg Vout 90 % 0 % 0 % 90 % 4 V 0 V PW = 0 s D.C. % S td(on) tr td(off) tf Page of 5
Doc No. TT4-ZZ-004 Revision. Established : 06--09 Drain Current IS ( A ) 0 8 6 4 0 VGS = 4.5 V Technical Data ( reference ) IS - VSS RSS(on) - IS.5 V 3.8 V 3. V 0 0.0 0.0 0.03 0.04 0.05 Source-source Voltage VSS ( V ) Source-source ON-state Resistance RSS (on) ( m ) 3.0.5.0.5.0 FCAB50L.5 V 3. V 3.8 V VGS = 4.5 V 5 6 7 8 9 0 Source Current IS ( A ) Source Current IS ( A ) IS - VGS 0 0. 0.0 0.3 0.5 0.7 0.9..3.5.7 Source-source ON-state Resistance RSS (on) ( m ) 0 9 8 7 6 5 4 3 0 RSS(on) - VGS IS = 8.0 A 3 4 5 Gate-source Voltage VGS ( V ) Gate-source Voltage VGS ( V ) Diode Forward Current IF ( A ) 0 0. 0.0 IF - VF(s-s) IGS - VGS.E 04 0 0. 0.4 0.6 0.8. Gate-source Leakage Current IGS ( A ).E 05.E 06.E 07.E 08.E 09.E 0 0 4 6 8 0 Body Diode Forward Voltage VF(s-s) ( V ) Gate-source Voltage VGS ( V ) Page 3 of 5
Doc No. TT4-ZZ-004 Revision. Established : 06--09 Zero Gate Voltage Source Current ISS ( A ) Normalized Effective Transient Thermal Impedance Thermal Resistance Rth ( C/W ).E 04.E 05.E 06.E 07.E 08.E 09.E 0 000 00 0 ISS - VSS Source-source Voltage VSS ( V ) Rth - tsw Ta = 5 ºC (A) Mounted on FR4 board (5.4 mm 5.4 mm t.0 mm) using the minimum recommended pad size (36 m Copper). (B) Mounted on Ceramic substrate (70 mm 70 mm t.0 mm). 0. 0.00 0.0 0. 0 00 000 0 0. 0 5 0 5 0 Duty Cycle = 0.5 0. 0.05 0.0 Pulse Width tsw ( s ) Thermal Response Ta = 5 ºC, Mounted on FR4 board (5.4 mm 5.4 mm t.0 mm) using the minimum recommended pad size (36 m Copper). Single Pulse 0.0 0.000 0.00 0.0 0. 0 00 Square Wave Pulse Duration ( s ) Technical Data ( reference ) (A) (B) Gate - source Voltage VGS ( V ) Source Current IS ( A ) 6 5 4 3 0 000 00 0 0. FCAB50L Dynamic Input/Output Characteristics VDD = 6.0 V IS = 8.0 A 0 0 0 30 40 50 Gate Charge ( nc ) Safe Operating Area limited by RSS(on) (VGS = 3.8 V) Absolute Maximum 500 s ms 3ms DC Ta = 5 ºC, Mounted on FR4 board (5.4 mm 5.4 mm t.0 mm) using the minimum recommended pad size(36 m Copper). 0.0 0. 0 Source-source Voltage VSS ( V ) ms 00 ms s Page 4 of 5
Doc No. TT4-ZZ-004 Revision. Established : 06--09 FCAB50L Outline Unit : mm Land Pattern (Reference) Unit : mm Page 5 of 5
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