AON582B CommonDrain Dual NChannel Enhancement Mode Field Effect Transistor General Description Features The AON582B/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a unidirectional or bidirectional load switch, facilitated by its commondrain configuration. AON582B and AON582BL are electrically identical. RoHs Compliant AON582BL is Halogen Free V DS (V) = 3V I D = 7.2A (VGS = 4.5V) R DS(ON) < 19 mω (V GS = 4.5V) R DS(ON) < 2 mω (V GS = 4.V) R DS(ON) < 23 mω (V GS = 3.1V) R DS(ON) < 3 mω (V GS = 2.5V) ESD Protected DFN 2X5 D1/D2 D1 D2 Top View Absolute Maximum Ratings unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Continuous Drain Current A Pulsed Drain Current B Power Dissipation A T A =7 C Bottom View Symbol V DS V GS 7.2 I D 5.6 I DM Maximum Junction and Storage Temperature Range T J, T STG 55 to 15 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t 1s 3 4 Maximum JunctiontoAmbient A R θja SteadyState 61 75 Maximum JunctiontoLead C SteadyState R θjl 4.5 6 3 ±12 1.6 P DSM T A =7 C 1. 55 Units V A W
AON582B Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25µA, V GS =V 3 V V DS =3V, V GS =V 1 I DSS Zero Gate Voltage Drain Current µa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±1V 1 µa BV GSO GateSource Breakdown Voltage V DS =V, I G =±25uA ±12 V V GS(th) Gate Threshold Voltage V DS =V GS, I D =25µA.6 1.1 1.5 V I D(ON) On state drain current V GS =4.5V, V DS =5V 55 A R DS(ON) Static DrainSource OnResistance V GS =4.5V, 12 15.5 19 T J =1 19 23.5 29 V GS =4.V, I D =5A 13 16 2 V GS =3.1V, I D =5A 14 18 23 V GS =2.5V, I D =4A 17 23 3 g FS Forward Transconductance V DS =5V, 32 S V SD Diode Forward Voltage I S =1A,V GS =V.71.9 V I S Maximum BodyDiode Continuous Current 2.5 A DYNAMIC PARAMETERS C iss Input Capacitance 92 115 pf C oss Output Capacitance V GS =V, V DS =15V, f=1mhz 15 pf C rss Reverse Transfer Capacitance 52 pf R g Gate resistance V GS =V, V DS =V, f=1mhz 1.7 2.5 kω SWITCHING PARAMETERS Q g (1V) Total Gate Charge 17.5 24 nc Q g (4.5V) Total Gate Charge 7.5 1 nc V GS =1V, V DS =15V, Q gs Gate Source Charge 2.9 nc Q gd Gate Drain Charge 2.5 nc t D(on) TurnOn DelayTime 32 42 ns t r TurnOn Rise Time V GS =1V, V DS =15V, R L =2.1Ω, 55 ns t D(off) TurnOff DelayTime R GEN =3Ω 4.35 µs t f TurnOff Fall Time 2.4 µs t rr Body Diode Reverse Recovery Time I F =7A, di/dt=1a/µs 21.6 26 ns Q rr Body Diode Reverse Recovery Charge I F =7A, di/dt=1a/µs 1 nc A: The value of R θja is measured with the device mounted on 1in 2 FR4 board with 2oz. Copper, in a still air environment with T A=. The value in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <3 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in 2 FR4 board with 2oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. Rev5: July211 mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AON582B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 4.5V 3.5V 3V 25 V DS =5V 4 2 3 2.5V 15 2 1 1 1 V GS =2V 5 1 2 3 4 5 VDS (Volts) Fig 1: OnRegion Characteristics.5 1 1.5 2 2.5 3 Figure 2: Transfer Characteristics 4 1.8 R DS(ON) (mω) 3 2 1 V GS =2.5V V GS =4.5V Normalized OnResistance 1.6 1.4 1.2 1. V GS =4.5V V GS =2.5V I D =4A 5 1 15 2 Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 25 5 75 1 125 15 175 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 6 5 1.E2 1.E1 1 R DS(ON) (mω) 4 3 2 1 I S (A) 1.E 1.E1 1.E2 1.E3 1 2 4 6 8 1 Figure 5: OnResistance vs. GateSource Voltage 1.E4 1.E5..2.4.6.8 1. 1.2 1.4 1.6 V SD (Volts) Figure 6: BodyDiode Characteristics
AON582B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 8 6 4 2 V DS =15V Capacitance (pf) 16 12 8 4 C rss C iss C oss 4 8 12 16 2 Q g (nc) Figure 7: GateCharge Characteristics 5 1 15 2 25 3 V DS (Volts) Figure 8: Capacitance Characteristics 1. 2 I D (Amps) Z θja Normalized Transient Thermal Resistance 1. 1..1 1 1.1 R DS(ON) limited D=T on /T T J,PK =T C P DM.Z θja.r θja R θja =75 DC Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1µs 1µs 1ms 1ms.1s 1s 1s T J(Max) =15 C..1.1 1 1 1 V DS (Volts) Power (W) 16 12 8 4 1E4.1.1.1 1 1 1 1 Pulse Width (s) Figure 1: Single Pulse Power Rating Junctionto Case (Note E) In descending order D=.5,.3,.1,.5,.2,.1, single pulse Single Pulse T on T.1.1.1.1.1.1 1 1 1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance P D T J(Max) =15 C
AON582B Gate Charge Test Circuit & Waveform Qg 1V Qgs Qgd Ig Charge Resistive Switching Test Circuit & Waveforms RL 9% 1% td(on) t r t d(off) t f t on t off Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr