Datasheet RJQ68DPM 6V - A - IGBT and Diode High Speed Power Switching R7DS87EJ Rev.. Jul 7, 22 Features Low collector to emitter saturation voltage V CE(sat) = 2.65 V typ. (I C = 25 A, V GE = 5 V, ) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS5ZB-A (Package name: TO-3PFM-5) 2 5 Diode IGBT 3. NC 2. Cathode 3. Anode, Collector. Emitter 5. Gate 2 3 5 Absolute Maximum Ratings IGBT Item Symbol Ratings Unit Collector to emitter voltage V CES 6 V Gate to emitter voltage V GES ±3 V Collector current Collector peak current Collector dissipation Tc = 25 C Tc = C Note I C Note I C I C(peak) Note3 P C Note2 2 A A A 8 W Junction to case thermal impedance j-c 2.3 C/W Junction temperature Tj 5 C Storage temperature Tstg 55 to +5 C Notes:. Limited by Tj max. 2. Value at Tc = 25 C 3. Pulse width limited by maximum safe operating area. (Tc = 25 C) R7DS87EJ Rev.. Page of 8 Jul 7, 22
RJQ68DPM Diode Item Symbol Ratings Unit Maximum reverse voltage V RM 6 V Average rectified forward current I o 2 A Peak surge forward current PW = ms PW = ms Note I FSM Note5 I FSM A 9 A Junction to case thermal impedance j-cd 3. C/W Junction temperature Tj 5 C Storage temperature Tstg 55 to +5 C Notes:. 5Hz sine half wave, Non-repetitive cycle value, Tj = 25 C. 5. PW = ms sine half wave, Non-repetitive peak value, Tj = 25 C. Electrical Characteristics IGBT Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I CES A V CE = 6 V, V GE = Gate to emitter leak current I GES ± A V GE = ±3 V, V CE = (Tc = 25 C) (Tj = 25 C) Gate to emitter cutoff voltage V GE(off) 3. 5.5 V V CE = V, I C = ma Collector to emitter saturation voltage V CE(sat) 2.65 3.5 V I C = 25 A, V GE = 5 V Note6 V CE(sat) 3.2 V I C = 5 A, V GE = 5 V Note6 Input capacitance Cies 8 pf Output capacitance Coes 2 pf Reveres transfer capacitance Cres 6 pf Switching time t d(on) 8 ns t r 68 ns t d(off) 95 ns Notes: 6. Pulse test Diode t f 55 ns V CE = 25 V V GE = f = MHz I C = 3 A, Resistive Load V CC = 3 V V GE = 5 V Rg = 5 Item Symbol Min Typ Max Unit Test conditions Forward voltage V F.2.8 V I F = 2 A Reverse current I R A V R = 6 V Reverse recovery time t rr ns I F = 2 A FRD reverse recovery charge Q rr.29 C di/dt = A/ s FRD peak reverse recovery current I rr 5.9 A (Tj = 25 C) R7DS87EJ Rev.. Page 2 of 8 Jul 7, 22
RJQ68DPM Main Characteristics IGBT. Maximum Safe Operation Area PW = μs. shot pulse.. Collector to Emitter Voltage V CE (V) 8 6 2 Typical Output Characteristics V 3 V 5 V 8. V 9 V 8 V 7.6 V 7.2 V 6.8 V V GE = 6. V 2 3 5 6 Collector to Emitter Voltage V CE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 8 6 2 V CE = V Ta = 75 C 25 C 25 C 2 6 8 2 Collector to Emitter Saturation Voltage V CE(sat) (V) 8 6 2 I C = 5 A 25 A 2 A A 8 2 6 2 Gate to Emitter Voltage V GE (V) Gate to Emitter Voltage V GE (V) Collector to Emitter Saturation Voltage V CE(sat) (V) 7 6 5 3 2 Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) V GE = 5 V I C = A 5 A 25 A 2 A A 25 25 5 75 25 5 Gate to Emitter Cutoff Voltage V GE(off) (V) 8 6 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) I C = ma ma 2 V CE = V 25 25 5 75 25 5 Junction Temparature Tj ( C) Junction Temparature Tj ( C) R7DS87EJ Rev.. Page 3 of 8 Jul 7, 22
RJQ68DPM Typical Capacitance vs. Collector to Emitter Voltage Dynamic Input Characteristics (Typical) Capacitance C (pf) Cies Coes Cres V GE = V f = MHz 5 5 2 25 Collector to Emitter Voltage V CE (V) 8 6 2 I C = 5 A V CE V GE V CC = 8 V 3 V V 6 2 V CC = 8 V 3 V V 2 6 8 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Gate Charge Qg (nc) Forward Current vs. Forward Voltage (Typical) Reverse Recovery Time vs. di/dt (Typical) Diode Forward Current I F (A) 8 6 2 V GE = V 2 3 Reverse Recovery Time t rr (ns) 2 6 2 8 I F = 3 A 8 2 6 2 C-E Diode Forward Voltage V CEF (V) di/dt (A/μs) Capacitance vs. Reverse Voltage (Typical) f = MHz Tc = 25 C Capaitace Cj (pf). Reverse Voltage V R (V) R7DS87EJ Rev.. Page of 8 Jul 7, 22
RJQ68DPM Switching Characteristics (Typical) () Switching Characteristics (Typical) (2) Switching Times t (ns) V CC = 3 V, V GE = 5 V Rg = 5 Ω, Tj = 25 C tr includes the diode recovery td(off) tf td(on) tr Swithing Energy Losses E (μj) V CC = 3 V, V GE = 5 V Rg = 5 Ω, Tj = 25 C Eoff Eon Eon includes the diode recovery Switching Times t (ns) Switching Characteristics (Typical) (3) V CC = 3 V, V GE = 5 V I C = 5 A, Tj = 25 C tr tf td(on) td(off) tr includes the diode recovery Gate Resistance Rg (Ω) Swithing Energy Losses E (μj) Switching Characteristics (Typical) () Eoff Eon V CC = 3 V, V GE = 5 V I C = 5 A, Tj = 25 C Eon includes the diode recovery Gate Resistance Rg (Ω) Switching Characteristics (Typical) (5) Switching Characteristics (Typical) (6) Switching Times t (ns) V CC = 3 V, V GE = 5 V I C = 5 A, Rg = 5 Ω tr includes the diode recovery td(off) tr tf td(on) 25 5 75 25 5 Junction Temperature Tj ( C) Swithing Energy Losses E (μj) V CC = 3 V, V GE = 5 V I C = 5 A, Rg = 5 Ω Eon includes the diode recovery Eoff Eon 25 5 75 25 5 Junction Temperature Tj ( C) R7DS87EJ Rev.. Page 5 of 8 Jul 7, 22
RJQ68DPM Normalized Transient Thermal Impedance γ s (t). Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) D =.5.2..5.2 PW T. μ m m m. shot pulse Pulse Width θj c(t) = γs (t) θj c θj c = 2.3 C/W, Tc = 25 C P DM PW (s) Tc = 25 C D = PW T Normalized Transient Thermal Impedance γ s (t). Normalized Transient Thermal Impedance vs. Pulse Width (Diode) D =.5.2..5 Tc = 25 C θ j c(t) = γs (t) θ j c θ j c = 3 C/W, Tc = 25 C.2. P DM D = PW T shot pulse PW T. μ m m m Pulse Width PW (s) R7DS87EJ Rev.. Page 6 of 8 Jul 7, 22
RJQ68DPM Switching Time Test Circuit Waveform 9% Diode clamp V GE % L 9% 9% I C % % % D.U.T V CC t d(on) t r t d(off) t off t f t tail Rg t on V CE % Diode Reverse Recovery Time Test Circuit Waveform V CC D.U.T I F I F L di F/dt t rr I rr.5 I rr Rg.9 I rr R7DS87EJ Rev.. Page 7 of 8 Jul 7, 22
RJQ68DPM Package Dimensions Package Name TO-3PFM-5 JEITA Package Code SC-93 RENESAS Code Previous Code PRSS5ZB-A TO-3PFM-5 MASS[Typ.] 5.3g Unit: mm φ3.2 +..2 5.6 ±.3 5. ±.3 5.5 ±.3 5. ±.3 2. ±.3 2.25 ±.3..86 9.7 ±.5 9.9 ±.3 3.2 ±.3 2.725 2.725.66 +.2..9 +.2. Ordering Information Orderable Part Number Quantity Shipping Container RJQ68DPM-#T 36 pcs Box (tube) R7DS87EJ Rev.. Page 8 of 8 Jul 7, 22
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