SCT75NY N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 7V 75mW 6A 57W Outline TO-68-L () () () Features Inner circuit ) Low on-resistance ) Fast switching speed ) Long creepage distance with no center lead 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant () Gate () Drain () Source * Body Diode Packaging specifications Packing Embossed tape Application Reel size (mm) Auxilialy power supplies Tape width (mm) 4 Type Switch mode power supplies Basic ordering unit (pcs) 4 Taping code TB Marking SCT75NY Absolute maximum ratings (T a = 5 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 7 V Continuous drain current T c = 5 C * I D T c = C * I D drain current * I D,pulse 5.9 A 4 A 4 A Gate - Source voltage (DC) V GSS -6 to V Gate - Source surge voltage (t surge <nsec) V GSS_surge * - to 6 V Power dissipation (T c = 5 C) P D 57 W Junction temperature T j 75 C Range of storage temperature T stg -55 to +75 C 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
SCT75NY Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc -.4.65 C/W Electrical characteristics (T a = 5 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma 7 - - V Zero gate voltage drain current I DSS V DS = 7V, V GS = V T j = 5 C -. T j = 5 C -. - A Gate - Source leakage current I GSS+ V GS = +V, V DS = V - - na Gate - Source leakage current I GSS- V GS = -6V, V DS = V - - - na Gate threshold voltage V GS (th) V DS = V GS, I D =.6mA.6.8 4. V * Limited only by maximum temperature allowed. * PW s, Duty cycle % * Example of acceptable Vgs waveform 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
SCT75NY Electrical characteristics (T a = 5 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Static drain - source on - state resistance R DS(on) V GS = 8V, I D =.7A T j = 5 C - 75 975 T j = 5 C - 88 - mw Gate input resistance R G f = MHz, open drain - 49 - W Transconductance g fs V DS = V, I D =.7A -.6 - S Input capacitance C iss V GS = V - 75 - Output capacitance C oss V DS = 8V - 9 - pf Reverse transfer capacitance C rss f = MHz - 7 - Effective output capacitance, energy related C o(er) V GS = V V DS = V to 8V - - pf Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD = 5V, I D =.7A - 9 - V GS = 8V/V - 4 - R L = 94W - 4 - R G = W - 6 - ns V DD = 8V, I D =.7A Turn - on switching loss E on V GS = 8V/V R G = W, L=mH *E Turn - off switching loss E on includes diode off reverse recovery - 76 - - - µj Gate Charge characteristics (T a = 5 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD = 5V - 7 - Gate - Source charge Q gs I D =.5A - 5 - nc Gate - Drain charge Q gd V GS = 8V - 6.5 - Gate plateau voltage V (plateau) V DD = 5V, I D =.5A -. - V 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
SCT75NY Body diode electrical characteristics (Source-Drain) (T a = 5 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * Tc = 5 C - - 5.9 A Inverse diode direct current, pulsed I SM * - - 4 A Forward voltage V SD V GS = V, I S =.7A - 4. - V Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm I F =.7A, V R = 8V di/dt = 9A/ s - 6 - ns - 8 - nc -. - A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R th 4m C th 5µ R th 59m K/W C th.57m Ws/K R th 68m C th 68.7m 6 ROHM Co., Ltd. All rights reserved. 4/ 6.9 - Rev.A
SCT75NY Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig. Maximum Safe Operating Area Power Dissipation : P D [W] 6 5 4 5 5. Operation in this area is limited by R DS(on) Single Pulse P W = ms P W = s P W = ms P W = ms.. Junction Temperature : T j [ C] Transient Thermal Resistance : R th [K/W] Fig. Typical Transient Thermal Resistance vs. Pulse Width Single Pulse..... Pulse Width : P W [s] 6 ROHM Co., Ltd. All rights reserved. 5/ 6.9 - Rev.A
SCT75NY Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 6 5 4 V 8V 6V 4V V V GS = V.5.5.5 8V V 6V 4V V V GS = V 8V 4 6 8 8V 4 5 Fig.6 T j = 5 C Typical Output Characteristics(I) 6 Fig.7 T j = 5 C Typical Output Characteristics(II) 5 4 V 6V 8V 4V V V GS = V 8V 8V V 4V 6V V V GS = V 8V T a = 5ºC 4 6 8 T a = 5ºC 4 5 6 ROHM Co., Ltd. All rights reserved. 6/ 6.9 - Rev.A
SCT75NY Electrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II).5 V DS = V V DS = V.. T a = 75ºC T a = 5ºC T a = 75ºC T a = -5ºC.5.5 T a = 75ºC T a = 5ºC T a = 75ºC T a = -5ºC.5. 4 6 8 4 6 8 4 6 8 4 6 8 Gate - Source Voltage : V GS [V] Gate - Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] 4.5.5.5.5.5 Fig. Gate Threshold Voltage vs. Junction Temperature 5 4 V GS = V DS I D =.6mA -5 5 5 Junction Temperature : T j [ C] Fig. Transconductance vs. Drain Current Transconductance : g fs [S]. V DS = V T a = 75ºC T a = 5ºC T a = 75ºC T a = -5ºC... 6 ROHM Co., Ltd. All rights reserved. 7/ 6.9 - Rev.A
SCT75NY Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [W] Fig. Static Drain - Source On - State Resistance vs. Gate Source Voltage.8.6.4..8.6.4. I D =.7A I D =.4A 8 4 6 8 Gate - Source Voltage : V GS [V] Static Drain - Source On-State Resistance : R DS(on) [W] Fig. Static Drain - Source On - State Resistance vs. Junction Temperature.5.5 V GS = 8V I D =.4A I D =.7A -5 5 5 Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [W] Fig.4 Static Drain - Source On - State Resistance vs. Drain Current T a = 75ºC T a = 5ºC T a = 75ºC V GS = 8V T a = -5ºC.. 6 ROHM Co., Ltd. All rights reserved. 8/ 6.9 - Rev.A
SCT75NY Electrical characteristic curves Capacitance : C [pf] Switching Time : t [ns] Fig.5 Typical Capacitance vs. Drain - Source Voltage Fig.7 Switching Characteristics f = MHz V GS = V. t f t d(off) C oss C rss C iss V DD = 5V V GS = 8V R G = Ω t r Gate - Source Voltage : V GS [V] Coss Stored Energy : E OSS [ J] Fig.6 Coss Stored Energy 9 8 7 6 5 4 Fig.8 Dynamic Input Characteristics 5 5 4 6 8 V DD = 5V I D =.5A t d(on). 4 6 8 4 6 8 Total Gate Charge : Q g [nc] 6 ROHM Co., Ltd. All rights reserved. 9/ 6.9 - Rev.A
SCT75NY Electrical characteristic curves Switching Energy : E [ J] Fig.9 Typical Switching Loss vs. Drain - Source Voltage 9 8 7 6 5 4 I D =.7A V GS = 8V/V R G = Ω L=mH E on E off 4 6 8 Switching Energy : E [ J] 4 5 5 5 Fig. Typical Switching Loss vs. Drain Current 5 V DD =8V V GS = 8V/V R G = Ω L=mH E on E off 4 5 6 7 8 Switching Energy : E [ J] Fig. Typical Switching Loss vs. External Gate Resistance 5 5 V DD =8V I D =.7A V GS = 8V/V L=mH E on E off 4 5 6 7 8 9 External Gate Resistance : R G [W] 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
SCT75NY Electrical characteristic curves Inverse Diode Forward Current : I S [A] Fig. Inverse Diode Forward Current vs. Source - Drain Voltage.. V GS = V T a = 75ºC T a = 5ºC T a = 75ºC T a = -5ºC 4 5 6 7 8 Fig. Reverse Recovery Time vs.inverse Diode Forward Current Reverse Recovery Time : t rr [ns] di / dt = 9A / µs V R = 8V V GS = V Source - Drain Voltage : V SD [V] Inverse Diode Forward Current : I S [A] 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
SCT75NY Measurement circuits Fig.- Switching Time Measurement Circuit Fig.- Switching Waveforms Fig.- Gate Charge Measurement Circuit Fig.- Gate Charge Waveform Fig.- Switching Energy Measurement Circuit Fig.- Switching Waveforms E on = I D V DS E off = I D V DS Same type device as D.U.T. V DS I rr V surge D.U.T. I D I D Fig.4- Reverse Recovery Time Measurement Circuit Fig.4- Reverse Recovery Waveform D.U.T. 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
SCT75NY Dimensions (Unit : mm) TO-68-L 6 ROHM Co., Ltd. All rights reserved. / 6.9 - Rev.A
Notice Notes ) ) ) 4) 5) 6) 7) 8) 9) ) ) ) ) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 6 ROHM Co., Ltd. All rights reserved. RB
Datasheet SCT75NY - Web Page Distribution Inventory Part Number SCT75NY Package TO-68-L Unit Quantity 8 Minimum Package Quantity 8 Packing Type Taping Constitution Materials List inquiry RoHS Yes