NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. Features Low V F and Low Leakage Schottky Diode Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive Can be Driven by Logic ICs Pb Free Package is Available Applications Buck Converter Synchronous Rectification Low Voltage Motor Control Load Management in Battery Packs, Chargers, Cell Phones, and other Portable Products MOSFET MAXIMUM RATINGS (T A = 5 C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS V Continuous Drain T A = 5 C I D. A Current (Note ) T A = C. Power Dissipation (Note ) Steady State T A = 5 C P D. W Continuous Drain Current (Note ) Power Dissipation (Note ) Pulsed Drain Current Operating Junction and Storage Temperature Steady State Single Pulse Drain to Source Avalanche Energy Starting T A = 5 C (t s) Lead Temperature for Soldering Purposes (/ from case for s) T A = 5 C I D. A T A = C.5 T A = 5 C P D.7 W t = s I DM A T J, T STG 55 to 5 C EAS 5 mj T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface mounted on FR board using the minimum recommended pad size (Cu area =.7 in sq). V (BR)DSS G V V MOSFET PRODUCT SUMMARY V R Max R DS(on) Typ 7 m @.5 V m @.7 V SCHOTTKY DIODE SUMMARY I F Max. A D P Channel MOSFET S Micro CASE 6A V F Max 6 mv @ I F =. A ORDERING INFORMATION I D Max. A.7 A Device Package Shipping NTTDFR Micro /Tape & Reel NTTDFRG Micro /Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD/D. A C Schottky Diode MARKING DIAGRAM & PIN ASSIGNMENT CCDD WW BG AASG BG = Specific Device Code WW = Work Week = Pb Free Package (Note: Microdot may be in either location) Semiconductor Components Industries, LLC, 7 April, 7 Rev. 6 Publication Order Number: NTTDF/D
NTTDF SCHOTTKY DIODE MAXIMUM RATINGS (T A = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V Average Forward Current (Rated V R, T A = C) I O. A Peak Repetitive Forward Current (Note ) I FRM. A Non Repetitive Peak Surge Current (Note ) I FSM A THERMAL RESISTANCE RATINGS Rating Symbol FET Max Schottky Junction to Ambient Steady State (Note 5) R JA 5 C/W Junction to Ambient Steady State (Note 6) R JA 6 5 C/W Input Capacitance C ISS Total Gate Charge Q G(TOT) MOSFET ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V V Zero Gate Voltage Drain Current (Note 7) I DSS V GS = V, V DS = 6 V. A V GS = V, T J = 5 C, V DS = 6 V 5 Gate to Source Leakage Current I GSS V DS = V, V GS = ± V ± na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A.5.5 V Negative Threshold V GS(TH) /T J.5 mv/ C Temperature Coefficient Drain to Source On Resistance R DS(on) V GS =.5 V, I D =. A 7 9 m V GS =.5 V, I D =. A 5 Forward Transconductance g FS V DS = V, I D =.7 A. S CHARGES, CAPACITANCES AND GATE RESISTANCE 55 75 pf Output Capacitance C OSS V GS = V, f =. MHz, V DS = 6 V Reverse Transfer Capacitance C RSS 5 75 nc Gate to Source Gate Charge Q GS V GS =.5 V, V DS = 6 V, I D =. A.5. Gate to Drain Miller Charge Q GD 5. SWITCHING CHARACTERISTICS Turn On Delay Time t d(on) ns Rise Time t r V GS =.5 V, V DD = V, 5 65 Turn Off Delay Time t d(off) I D =. A, R G = 6. 6 Fall Time t f 9 55 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S =. A.. V Reverse Recovery Time t RR 7 5 ns Charge Time t a V GS = V, d IS /dt = A/ s, I S =. A 6 Discharge Time t b Reverse Recovery Charge Q RR.5.5 nc. Rated V R, square wave, khz, T A = 5 C.. Surge applied at rated load conditions, half wave, single phase, 6 Hz. 5. Surface mounted on FR board using inch sq pad size (Cu area =.7 in sq [ oz] including traces). 6. Surface mounted on FR board using the minimum recommended pad size (Cu area =.7 in sq). 7. Body diode leakage current. Unit
NTTDF Forward Voltage V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit Reverse Breakdown Voltage B V I R =. ma V Reverse Leakage Current I R T A = 5 C.5 ma V R = V T A = 5 C T A = 5 C.5 V F I F =. A T A = 5 C.9 T A = 5 C.6 I F =. A T A = 5 C.5 Voltage Rate of Change dv/dt V R = V, V/ s
NTTDF TYPICAL ELECTRICAL CHARACTERISTICS I D, DRAIN CURRENT (AMPS) V GS =. V T J = 5 C V GS = V V GS =.5 V V GS =.5 V V GS =.9 V V GS =.7 V V GS =.5 V I D, DRAIN CURRENT (AMPS) 5 V DS > = V T J = 5 C T J = C T J = 55 C 6.5.5 V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ).. T J = 5 C T J = 5 C.5..5 6 V GS, GATE TO SOURCE VOLTAGE (VOLTS) R DS(on), DRAIN TO SOURCE RESISTANCE ( ). V GS =.7 V. V GS =.5 V.6..5.5.5 I D, DRAIN CURRENT (AMPS).5 Figure. On Resistance vs. Gate to Source Voltage Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED).6... I D =. A V GS =.5 V I DSS, LEAKAGE (na). V GS = V T J = 5 C T J = C T J = 5 C.6 5 5 5 5 75 T J, JUNCTION TEMPERATURE ( C) 5 5. 6 V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 5. On Resistance Variation with Temperature Figure 6. Drain to Source Leakage Current vs. Voltage
NTTDF TYPICAL ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) 5 9 6 V DS = V V GS = V C iss T J = 5 C C rss C iss C oss C rss 5 5 5 V GS V DS V GS, GATE TO SOURCE VOLTAGE (VOLTS) 5 Q Q QT V GS 6 V DS I D =. A T J = 5 C 6 Q g, TOTAL GATE CHARGE (nc) 6 V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure. Gate to Source and Drain to Source Voltage vs. Total Charge V DD = V I D =. A V GS =.7 V t d (off) t r tf t, TIME (ns) t r t, TIME (ns) t d (on). t d (off) t d (on) R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance t f.. V DD = V I D =. A V GS =.5 V R G, GATE RESISTANCE ( ) Figure. Resistive Switching Time Variation vs. Gate Resistance I S, SOURCE CURRENT (AMPS).6... V GS = V T J = 5 C I S t p di/dt t a t rr t b.5 I S I S TIME..5.6.7..9 V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure. Diode Reverse Recovery Waveform Figure. Diode Forward Voltage vs. Current 5
NTTDF R thja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE. D =.5...5 Single Pulse.. Normalized to R ja at Steady State ( inch pad).5.56..7..6. F.7 F.5 F.9 F 5 F 6 F. E E E E+ E+ E+ E+ t, TIME (s) Figure. FET Thermal Response TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I F, INSTANTANEOUS FORWARD CURRENT (AMPS)... T J = 5 C 5 C 5 C C T J = 5 C 5 C. 5 C.....5.6.7..9....6. I F, INSTANTANEOUS FORWARD CURRENT (AMPS)... V F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure. Typical Forward Voltage Figure 5. Maximum Forward Voltage 6
NTTDF TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I R, REVERSE CURRENT (AMPS) E E E E 5 E 6 E 7 T J = 5 C 5 C 5 C 5. 5 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Reverse Current I R, MAXIMUM REVERSE CURRENT (AMPS) E E E E E 5 E 6 T J = 5 C 5 C 5. 5 V R, REVERSE VOLTAGE (VOLTS) Figure 7. Maximum Reverse Current C, CAPACITANCE (pf) TYPICAL CAPACITANCE AT V = 7 pf I O, AVERAGE FORWARD CURRENT (AMPS).6.....6.. 5. 5 6 6 V R, REVERSE VOLTAGE (VOLTS) T A, AMBIENT TEMPERATURE ( C) dc SQUARE WAVE I pk /I o = I pk /I o = 5. I pk /I o = I pk /I o = FREQ = khz Figure. Typical Capacitance Figure 9. Current Derating P FO, AVERAGE POWER DISSIPATION (WATTS).7.6.5.... I pk /I o = I pk /I o = I pk /I o = 5. I pk /I o = SQUARE WAVE.5..5 I O, AVERAGE FORWARD CURRENT (AMPS) Figure. Forward Power Dissipation dc. 7
NTTDF PACKAGE DIMENSIONS Micro CASE 6A ISSUE G H E D E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.5 (.) PER SIDE. 5. 6A OBSOLETE, NEW STANDARD 6A. PIN ID T SEATING PLANE. (.5) e b PL. (.) M T B S A S A A c L MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.. A.5..5...6 b.5.....6 c....5.7.9 D.9..... E.9..... e.65 BSC.6 BSC L..55.7.6.. H E.75.9 5.5.7.9.99 SOLDERING FOOTPRINT*. X...5 X..6..67 5...65 6X.56 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY and Micro are registered trademarks of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 7 USA Phone: 675 75 or 6 Toll Free USA/Canada Fax: 675 76 or 67 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 577 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTTDF/D