Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics, structures, properties and uses; Magnetic materials, basics, classification, ferrites, ferro/para-magnetic materials and components; Superconductivity, uses. Crystal structure & defects Ceramic materials-structures composites, processing and uses Insulating laminates for electronics Insulating laminates structures, properties and uses Magnetic materials, basics Magnetic materials, classification ferrites ferro/para-magnetic materials and components Superconductivity, uses.
Unit II: Semiconductors & Diode Circuits:(11) Extrinsic semiconductor, Hall effect, mechanism of current flow, drift current, diffusion current, Einstein relation, continuity equation, capacitance of junction barrier, Diode circuit parameters, Designing of Rectifier, Clippers and Clampers. Power supply parameters, SMPS, Zener and Avalanche Breakdown, Zener voltage regulator, transistor series pass regulator (with feedback) and shunt voltage regulators, Short circuit protection. Extrinsic semiconductor Hall effect Mechanism of current flow, drift current, diffusion current Einstein relation, continuity equation Capacitance of junction barrier Diode circuit parameters, Designing of Rectifier Clippers and Clampers Power supply parameters, SMPS Zener and Avalanche Breakdown Zener voltage regulator Transistor series pass regulator (with feedback) and shunt voltage regulators, Short circuit protection.
Unit III: Bipolar Junction Transistors:(12) CB, CE, CC configurations and their characteristics,low frequency transistor amplifiers, Equivalent circuit of BJT using h parameter for CB, CE, CC configurations, calculation of transistor parameter for CB, CE, CC using h parameters, Transistor biasing and bias stabilization, the operating point, stability factor,analysis of fixed base bias, collector to base bias, Emitter resistance bias circuit, Bias compensation techniques. CB, CE, CC configurations and their characteristics Low frequency transistor amplifiers Equivalent circuit of BJT using h parameter for CB, CE, CC configurations alculation of transistor parameter for CB, CE, CC using h parameters Transistor biasing and bias stabilization The operating point, stability factor Analysis of fixed base bias collector to base bias Emitter resistance bias circuit Bias compensation techniques. 2 Hour 2 Hour
Unit IV: Field effect transistors:(8) Construction and characteristics of JFET, JFET biasing circuit MOSFET construction and characteristics, small signal model. MOSFET enhancement and depletion mode, Common source amplifier. Application of FET as a voltage variable resistor (VVR). Construction and characteristics of JFET JFET biasing circuit MOSFET construction and characteristics Small signal model MOSFET enhancement mode MOSFET depletion mode Common source amplifier Application of FET as a voltage variable resistor (VVR).
Unit V: Amplifier & Oscillator:(10) Introduction to Feedback Amplifiers & their design parameters, comparison of different feedback amplifier configuration viz (gain, input impedance, output impedance, current gain, voltage gain) cascading of BJT amplifier, Darlington Pair, Barkhausen criterion, Sinusoidal oscillators, L-C (Hartley-Colpitts) oscillators, RC phase shift, resonant oscillator, Wien Bridge and crystal oscillators, Clapp oscillator. Introduction to Feedback Amplifiers & their design parameters Comparison of different feedback amplifier Configuration viz (gain, input impedance, output impedance, current gain, voltage gain) Cascading of BJT amplifier Darlington Pair Barkhausen criterion Sinusoidal oscillators, L-C (Hartley-Colpitts) oscillators RC phase shift resonant oscillator Wien Bridge and crystal oscillators, Clapp oscillator.