a FEATURES Single-/Dual-Supply Operation, 1. V to 3 V,. V to 1 V True Single-Supply Operation; Input and Output Voltage Ranges Include Ground Low Supply Current (Per Amplifier), A Max High Output Drive, 5 ma Min Low Input Offset Voltage, V Max High Open-Loop Gain, 7 V/mV Min Outstanding PSRR, 5. V/V Max Industry Standard -Lead Dual Pinout Available in Die Form GENERAL DESCRIPTION The OP9 is a high performance micropower dual op amp that operates from a single supply of 1. V to 3 V or from dual supplies of ±. V to ± 1 V. Input voltage range includes the negative rail allowing the OP9 to accommodate input signals down to ground in single-supply operation. The OP9 s output swing also includes ground when operating from a single supply, enabling zero-in, zero-out operation. The OP9 draws less than µa of quiescent supply current per amplifier, while able to deliver over 5 ma of output current to a load. Input offset voltage is below µv eliminating the need for external nulling. Gain exceeds 7, and common-mode rejection is better than 1 db. The power supply rejection ratio of under 5. µv/v minimizes offset voltage changes experienced in battery-powered systems. The low offset voltage and high gain offered by the OP9 bring precision performance to micropower applications. The minimal voltage and current requirements of the OP9 suit it for battery- and solar-powered applications, such as portable instruments, remote sensors, and satellites. For a single op amp, see the OP9; for a quad, see the OP9. Precision, Low Power, Micropower Dual Operational Amplifier OP9 PIN CONNECTIONS PDIP (P-Suffix) OUT A 1 IN A +IN A 3 V A B OP9 7 5 V+ OUT B IN B +IN B V+ +IN OUTPUT IN NULL NULL ELECTRONICALLY ADJUSTED ON CHIP FOR MINIMUM OFFSET VOLTAGE V Figure 1. Simplified Schematic (one of two amplifiers is shown) Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 91, Norwood, MA -91, U.S.A. Tel: 71/39-7 www.analog.com Fax: 71/3-73 3 Analog Devices, Inc. All rights reserved.
OP9 SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ V S = 1.5 V to 15 V, T A = 5 C, unless otherwise noted.) OP9G Parameter Symbol Conditions Min Typ Max Unit INPUT OFFSET VOLTAGE V OS 15 5 µv INPUT OFFSET CURRENT I OS V CM = V.1 5 na INPUT BIAS CURRENT I B V CM = V. 5 na LARGE-SIGNAL A VO V S = ±15 V, V O = ±1 V VOLTAGE GAIN R L = 1 kω V/mV R L = 1 kω V/mV R L = kω 1 V/mV V+ = 5 V, V = V, 1 V < V O < V R L = 1 kω 1 5 V/mV R L = 1 kω 7 1 V/mV INPUT VOLTAGE RANGE 1 IVR V+ = 5 V, V = V / V V S = ±5 V 1 15/13.5 V OUTPUT VOLTAGE SWING V O V S = ±5 V R L = 1 kω ±13.5 ±1. V R L = kω ±1.5 ±11.5 V V OH, V OL V+ = 5 V, V = V.. V R L = 1kΩ 1 5 µv COMMON-MODE CMR V+ = 5 V, V = V 1 db REJECTION V < V CM < V V S = ±15 V, 9 1 db 15 V < V CM < +13.5 V POWER SUPPLY PSRR 3. 1 µv/v REJECTION RATIO SUPPLY CURRENT I SY V S = ±1.5 V 19 3 µa (All Amplifiers) V S = ±15 V 5 µa CAPACITIVE LOAD A V = +1 5 pf STABILITY No Oscillations INPUT NOISE VOLTAGE 1 e np-p f O =.1 Hz to 1 Hz 3 µv p-p V S = ±15 V INPUT RESISTANCE R IN V S = ±15 V 3 MΩ DIFFERENTIAL-MODE INPUT RESISTANCE R INCM V S = ±15 V GΩ COMMON-MODE SLEW RATE SR A V = +1 5 1 V/ms V S = ±15 V GAIN BANDWIDTH GBWP Vs = +15 V khz PRODUCT V S = ±15 V CHANNEL CS f O = 1 Hz 1 15 db SEPARATION V O = V p-p V S = ±15 V NOTES 1 Guaranteed by CMR test. Guaranteed but not 1% tested. Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (@ V S = 1.5 V to 15 V, C T A +5 C for OP9G, unless otherwise noted.) OP9G Parameter Symbol Conditions Min Typ Max Unit INPUT OFFSET VOLTAGE V OS 75 µv AVERAGE INPUT OFFSET TCV OS V S = ±15 V 1. µv/ C VOLTAGE DRIFT INPUT OFFSET CURRENT I OS V CM = V.1 7 na INPUT BIAS CURRENT I B V CM = V. 5 na LARGE-SIGNAL A VO V S = ±5 V, V O = ± V VOLTAGE GAIN R L = 1 kω 3 V/mV R L = 1 kω 15 5 V/mV R L = kω 75 15 V/mV V+ = 5 V, V = V, 1 V < V O < V R L = 1 kω 1 V/mV R L = 1 kω 9 V/mV INPUT VOLTAGE RANGE* IVR V+ = 5 V, V = V /3.5 V V S = +15 V * 15/+13.5 V OUTPUT VOLTAGE SWING V O V S = ±15 V R L = 1 kω ±13 ±1 V R L = kω ±1 ±11 V V OH V+ = 5 V, V = V R L = kω 3.9.1 V V OL V+ = 5 V, V = V R L = 1 kω 1 1 µv COMMON-MODE CMR V+ = 5 V, V = V, 1 db REJECTION V < V CM < 3.5 V V S = ±15 V 15 V < V CM < 13.5 V 9 11 db POWER SUPPLY PSRR 5. 15 µv/v REJECTION RATIO SUPPLY CURRENT I SY V S = ±1.5 V 5 µa (All Amplifiers) V S = ±15 V 31 µa *Guaranteed by CMR test. Specifications subject to change without notice. OP9 3
OP9 ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage................................ ± 1 V Differential Input Voltage.... [(V ) V] to [(V+) + V] Common-Mode Input Voltage. [(V ) V] to [(V+) + V] Output Short-Circuit Duration................ Indefinite Storage Temperature Range P Package........................ 5 C to +15 C Operating Temperature Range OP9G........................... C to +5 C Junction Temperature (T J )............. 5 C to +15 C Lead Temperature Range (Soldering, sec)........ 3 C ORDERING GUIDE T A = 5 C Temperature V OS Max Package Model Range (mv) Description OP9GP XIND 5 PDIP Package Type JA JC Unit -Lead Plastic DIP (P) 9 37 C/W NOTES 1 Absolute Maximum Ratings applies to packaged part. JA is specified for worst-case mounting conditions, i.e., JA is specified for device in socket for PDIP package. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP9 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE
Typical Performance Characteristics OP9 1.1.5. INPUT OFFSET VOLTAGE V INPUT OFFSET CURRENT na.1.1. INPUT BIAS CURRENT na.3..1. 3.9 3. 3.7. 3. 75 5 5 5 5 75 1 TEMPERATURE C TPC 1. Input Offset Voltage vs. Temperature 15 75 5 5 5 5 75 1 TEMPERATURE C TPC. Input Offset Current vs. Temperature 15 3.5 75 5 5 5 5 75 1 TEMPERATURE C TPC 3. Input Bias Current vs. Temperature 15 SUPPLY CURRENT A 3 3 1 1 NO LOAD V S = 1.5V OPEN-LOOP GAIN V/mV 5 3 1 R L = 1k T A = 5 C T A = 15 C OPEN-LOOP GAIN db 1 1 1 GAIN PHASE R L = 1k 1 1 1 PHASE SHIFT Degrees 75 5 5 5 5 75 TEMPERATURE C 1 15 5 1 15 TEMPERATURE C 5 3 5 1 15 FREQUENCY Hz 5 3 TPC. Supply Current vs. Temperature TPC 5. Open-Loop Gain vs. Single-Supply Voltage TPC. Open-Loop Gain and Phase Shift vs. Frequency CLOSED-LOOP GAIN db 1 1 1k 1k 1k FREQUENCY Hz TPC 7. Closed-Loop Gain vs. Frequency OUTPUT VOLTAGE SWING V 5 3 1 V+ = 5V, V = V 1 1k 1k LOAD RESISTANCE 1k TPC. Ouput Voltage Swing vs. Load Resistance OUTPUT VOLTAGE SWING V 1 1 1 1 1 1k 1k LOAD RESISTANCE TPC 9. Output Voltage Swing vs. Load Resistance 1k 5
OP9 POWER SUPPLY REJECTION db 1 1 1 NEGATIVE SUPPLY POSITIVE SUPPLY COMMON-MODE REJECTION db 1 1 1 1, NOISE VOLTAGE DESTINY nv/ Hz 1 1 1 1 FREQUENCY Hz 1k 1 1 1 FREQUENCY Hz 1k 1.1 1 1 1 1k FREQUENCY Hz TPC 1. Power Supply Rejection vs. Frequency TPC 11. Common-Mode Rejection vs. Frequency TPC 1. Noise Voltage Density vs. Frequency CURRENT NOISE DESTINY nv/ Hz 1 1 1 9 1 % mv A V = +1 R L = 1k C L = 5pF 1 s 1 A V = +1 9 R L = 1k C L = 5pF 1 % 5V 1ms.1.1 1 1 1 1k FREQUENCY Hz TPC 13. Current Noise Density vs. Frequency TPC 1. Small-Signal Transient Response TPC 15. Large-Signal Transient Response
OP9 +1V +15V +15V 1k 3 OP9 1 1k OP9 A 9k OP37A V 1k 5 OP9 7 15V 1 1k V IN OP9 B 15V V1 Vp-p @ 1Hz 1V Figure. Burn-In Circuit APPLICATIONS INFORMATION BATTERY-POWERED APPLICATIONS The OP9 can be operated on a minimum supply voltage of 1. V, or with dual supplies of. V, and draws only 19 pa of supply current. In many battery-powered circuits, the OP9 can be continuously operated for thousands of hours before requiring battery replacement, reducing equipment downtime and operating cost. High-performance portable equipment and instruments frequently use lithium cells because of their long shelf-life, light weight, and high energy density relative to older primary cells. Most lithium cells have a nominal output voltage of 3 V and are noted for a flat discharge characteristic. The low supply voltage requirement of the OP9, combined with the flat discharge characteristic of the lithium cell, indicates that the OP9 can be operated over the entire useful life of the cell. Figure 1 shows the typical discharge characteristic of a 1 Ah lithium cell powering an OP9 with each amplifier, in turn, driving full output swing into a 1 kω load. INPUT VOLTAGE PROTECTION The OP9 uses a PNP input stage with protection resistors in series with the inverting and noninverting inputs. The high breakdown of the PNP transistors coupled with the protection resistors provide a large amount of input protection, allowing the inputs to be taken V beyond either supply without damaging the amplifier. SINGLE-SUPPLY OUTPUT VOLTAGE RANGE In single-supply operation the OP9 s input and output ranges include ground. This allows true zero-in, zero-out operation. The output stage provides an active pull-down to around. V above ground. Below this level, a load resistance of up to 1 MΩ to ground is required to pull the output down to zero. In the region from ground to. V, the OP9 has voltage gain equal to the data sheet specification. Output current source capability is maintained over the entire voltage range including ground. V1 CHANNEL SEPARATION = LOG V/1 Figure 3. Channel Separation Test Circuit APPLICATIONS TEMPERATURE TO ma TRANSMITTER A simple temperature to ma transmitter is shown in Figure 5. After calibration, the transmitter is accurate to +.5 C over the 5 C to +15 C temperature range. The transmitter operates from V to V with supply rejection better than 3 ppm/v. One half of the OP9 is used to buffer the V TEMP pins while the other half regulates the output current to satisfy the current summation at its noninverting input. I OUT LITHIUM SULPHUR DIOXIDE CELL VOLTAGE V 1 ( ) VTEMP R + R7 = R R1 V SET 5 1 15 HOURS R R R7 R R1 5 3 Figure. Lithium Sulphur Dioxide Cell Discharge Characteristic with OP9 and 1 k Loads 35 The change in output current with temperature is the derivative of the transfer function: I T OUT ( ) VTEMP R + R7 = T R R1 7
OP9 From the formulas, it can be seen that if the span trim is adjusted before the zero trim, the two trims are not interactive, which greatly simplifies the calibration procedure. Calibration of the transmitter is simple. First, the slope of the output current versus temperature is calibrated by adjusting the span trim, R7. A couple of iterations may be required to be sure the slope is correct. Once the span trim has been completed, the zero trim can be made. Remember that adjusting the offset trim will not affect the gain. The offset trim can be set at any known temperature by adjusting R 5 until the output current equals: I OUT IFS = TAMBIENT TMIN ma ( )+ T OPERATING Table I shows the values of R required for various temperature ranges. Table I. Temperature Range C to +7 C 1 C to +5 C. 55 C to +15 C 3 R (k ) VARIABLE SLEW RATE FILTER The circuit shown in Figure can be used to remove pulse noise from an input signal without limiting the response rate to a genuine signal. The nonlinear filter has use in applications where the input signal of interest is known to have physical limitations. An example of this is a transducer output where a change of temperature or pressure cannot exceed a certain rate due to physical limitations of the environment. The filter consists of a comparator which drives an integrator. The comparator compares the input voltage to the output voltage and forces the integrator output to equal the input voltage. A1 acts as a comparator with its output high or low. Diodes D1 and D clamp the voltage across R3 forcing a constant current to flow in or out of C. R3, C, and A form an integrator with A s output slewing at a maximum rate of: VD. V Maximum slew rate = R3C R3C For an input voltage slewing at a rate under this maximum slew rate, the output simply follows the input with A1 operating in its linear region. SPAN TRIM 1N V+ V TO V V IN V OUT REF-3BZ V TEMP GND 3 R1 1k 1 OP9GP V TEMP R3 1k R 1k R5 5k R k ZERO TRIM V SET R 3k OP9GP 5 R7 5k 7 R 1k R9 1k N1711 R1 1 1%, W I OUT R LOAD Figure 5. Temperature to - ma Transmitter
OP9 R1 5k C1.1 F +15V OP9GP 3 1 R 1k The Ω variable resistor is used to trim the output voltage. For the lowest temperature drift, parallel resistors can be used in place of the variable resistor and taken out of the circuit as required to adjust the output voltage. V+ D1 D R3 1M 5 DIODES ARE 1N1 OP9GP 15V R 5k 7 C1 7pF Figure. Variable Slew Rate Filter V OUT V IN REF-3FZ V OUT GND R1B -TURN BOURNS 3P-1-1 OP9GP 3 R1A.37 1% C1 1 F 1 R k 1% N97A V OUT C.1 F LOW OVERHEAD VOLTAGE REFERENCE Figure 7 shows a voltage reference that requires only.1 V of overhead voltage. As shown, the reference provides a stable.5 V output with a. V to 3 V supply. Output voltage drift is only 1 ppm/ C. Line regulation of the reference is under 5 µv/v with load regulation better than 1 µv/ma with up to 5 ma of output current. The REF-3 provides a stable.5 V which is multiplied by the OP9. The PNP output transistor enables the output voltage to approach the supply voltage. Resistors R1 and R determine the output voltage. Figure 7. Low Overhead Voltage Reference R VOUT = 5. V 1+ R1 9
OP9 OUTLINE DIMENSIONS -Lead Plastic Dual In-Line Package [PDIP] [P-Suffix] (N-) Dimensions shown in inches and (millimeters).375 (9.53).35 (9.7).355 (9.).1 (.57) MAX 5.95 (7.9).5 (7.) 1.75 (.9).1 (.5) BSC.15 (.3) MIN.15 (3.1).13 (3.3) SEATING PLANE.11 (.79). (1.5). (.5).5 (1.7).1 (.).5 (1.1).1 (.3).35 (.).31 (7.7).3 (7.).15 (3.1).135 (3.3).1 (3.5).15 (.3).1 (.5). (.) COMPLIANT TO JEDEC STANDARDS MO-95AA CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN 1
OP9 Revision History Location Page 1/3 Data Sheet changed from REV. A to. Deleted OP9E and OP9F.......................................................................Universal Replaced PIN CONNECTIONS with PDIP................................................................... 1 Deleted ELECTRICAL CHARACTERISTICS................................................................ 3 Changes to ABSOLUTE MAXIMUM RATINGS.............................................................. Changes to ORDERING GUIDE........................................................................... Changes to TPC....................................................................................... 5 Change to SINGLE SUPPLY OUTPUT VOLTAGE RANGE.................................................... 7 Changes to Figure 5...................................................................................... Changes to Figure...................................................................................... 9 Change to LOW OVERHEAD VOLTAGE REFERENCE........................................................ 9 Updated OUTLINE DIMENSIONS....................................................................... 1 Data Sheet changed from REV. to REV. A. Edits to ORDERING INFORMATION...................................................................... 1 Edits to PIN CONNECTIONS............................................................................. 1 Edits to ABSOLUTE MAXIMUM RATINGS................................................................. Edits to PACKAGE TYPE................................................................................ Edits to WAFER TEST LIMITS........................................................................... 5 Edits to DICE CHARACTERISTICS....................................................................... 5 11
1 C37 1/3(B)