Marie Curie Initial Training Network MC-PAD Associated partner NATIONAL INSTITUTE OF MATERIALS PHYSICS BUCHAREST-MAGURELE Atomistilor Str. 105 bis, P.O. Box MG-7, 077125 Magurele-Ilfov, Romania Phone: +40(0)21 3690185, Fax: +40(0)21 3690177, email: pintilie@infim.ro, http://www.infim.ro 1
NATIONAL INSTITUTE OF MATERIALS PHYSICS BUCHAREST-MAGURELE Atomistilor Str. 105 bis, P.O. Box MG-7, 077125 Magurele-Ilfov, Romania Phone: +40(0)21 3690185, Fax: +40(0)21 3690177, email: pintilie@infim.ro, http://www.infim.ro - NIMP Bucharest is devoted to fundamental and applied research and development, with particular emphasis in the fields of solid state physics and materials research. - The NIMP finances the major part of its activities through National R&D Programs promoted by the Romanian Ministery for Education and Research. - The institute has presently about 246 workers, including 174 scientific workers (14 PhD supervisors, 89 doctors, 59 PhD students), 41 research assistants and 32 administrative personnel. 2
NATIONAL INSTITUTE OF MATERIALS PHYSICS BUCHAREST-MAGURELE Atomistilor Str. 105 bis, P.O. Box MG-7, 077125 Magurele-Ilfov, Romania Phone: +40(0)21 3690185, Fax: +40(0)21 3690177, email: pintilie@infim.ro, http://www.infim.ro Goals: Preparation, characterization and study of the physical properties of new materials connected to high technology products and devices Development of analytical techniques and methods applied in materials science Training of young scientists, PhD and MSc students, students and technicians Supply the public institutions and companies with the Institute s R&D know-how and expertise Collaboration with the universities and other higher education establishments Development of international collaboration, especially based on EU funded projects 3
NATIONAL INSTITUTE OF MATERIALS PHYSICS BUCHAREST-MAGURELE Atomistilor Str. 105 bis, P.O. Box MG-7, 077125 Magurele-Ilfov, Romania Phone: +40(0)21 3690185, Fax: +40(0)21 3690177, http://www.infim.ro International cooperation: - 50 joint research projects in co-operation with foreign centers. - 12 international projects are financed from abroad, including 9 EU projects. - 40 research projects included into bilateral agreements between the Institute and partner institutes from abroad. Publications and scientific performance : - aprox. 150 contributions are published every year in ISI international journals and several patents are registered. -the scientific rate reflected by publications in the last five years show that NIMP has a rate of 3.5 times higher than any other research unit in Romania. - NIMP co-edits the Journal of Optoelectronic and Advanced Materials (JOAM), the only scientific journal in Romania devoted to advanced materials physics which is recognized by the Institute for Scientific Information in Philadelphia. 4
Laboratories and main research directions: 110. Advanced Materials for Special Applications (Head: Dr. Mihail Florin Lazarescu, E-mail: mlazare@.infim.ro, 19 employees) 120. Low Temperature Physics and Superconductivity (Head: Dr. Lucica Miu, E-mail: elmiu@infim.ro, 11 employees) 130. Physics of Semiconductor Materials and Complex Structures (Head: Dr. Ioana Pintilie, E-mail: ioana@infim.ro, 20 employees) 140. Solid State Magnetism (Head : Dr. Mihaela Valeanu, E-mail: valeanu@infim.ro, 30 employees) 150. Low Dimensional Systems (Head: Dr. Magdalena Lidia Ciurea, E-mail: ciurea@infim.ro, 45 employees) 160. Optics and Spectroscopy (Head: Dr. Mihaela Baibarac, E-mail: barac@infim.ro, 35 employees) 170. Oxidic Materials (Head: Dr. Cornel Miclea, E-mail: cmic@infim.ro, 15 employees) 180. Structure and Dynamics of Condensed Matter (Head: Dr. Lucian Diamandescu, e-mail: diamand@infim.ro, 20 employees) 190. Microstructure of Defects in Solid Materials (Head: Dr. Sergiu V. Nistor, E-mail: snistor@infim.ro, 13 employees) 5
Preparation/growth NATIONAL INSTITUTE OF MATERIALS PHYSICS BUCHAREST-MAGURELE Atomistilor Str. 105 bis, P.O. Box MG-7, 077125 Magurele-Ilfov, Romania Phone: +40(0)21 3690185, Fax: +40(0)21 3690177, http://www.infim.ro Facilities and training possibilities Single crystals (binary and ternary compounds based on Bridgemann method) Nanoparticles and Thin Films (chemical methods, sputtering, PLD, MBE) Characterization Structural (XRD, TEM, SEM, AFM) Spectroscopic (NIR, UV-VIS-IR, FTIR, Raman, XPS, EPR, ellipsometry, etc.) Physical properties (electrical, magnetical, optical) 6
X-ray photoelectron spectroscopy VG-ESCA Mk II substrate - charge transfer - chemical state - local atomic order 7
Example: Interface properties of Fe/GaAs(001) and Fe/InAs(001) C.M. Teodorescu and D. Luca, Surface Science 600, 4200 (2006). 8
Experimental set-up for transport and electronic properties investigation -TSC, OCS, C-V, C-T, C-f, I-V, I-T, I-t, hysteresis, spectral distributions photocurrent, photo-voltage. - Conditions: temperature 20-800 K; wavelengths 200-2500 nm (cw or modulated); frequency DC to 5 MHz for capacitance, cw to 1 khz for photoelectric signal Electrically active bulk defects e.g. irradiated Si diodes TSC signal (pa) 25 20 15 10 5 EPI-DO E(30K) E(28K) H(40K) BD B VO Forward injection at 5K, RB=150V as irradiated 20min@80C 80min@80C 1370min@80C 34270min@80C Electron injection at 5K 1370min@80C H(116K) BD A H(140K) H(152K) V 2 +? 0 0 20 40 60 80 100 120 140 160 180 200 Temperature (K) 9
Interface states Example - as grown MOS structure Al/SiO 2 /4H-SiC Capacitance (F) 2.7x10-10 1.8x10-10 9.0x10-11 1 MHz 250 khz 60 khz 16 khz 4 khz 1 khz 1- sweep up 2-sweep down 3-sweep up 4-sweep down 1 3 NIT ox deep 2,4 80K (D it +NIT ox ) shallow Capacitance (F) 2.7x10-10 1.8x10-10 9.0x10-11 sweep up 1 MHz 250 khz 60 khz 16 khz 4 khz 1 khz sweep down 1 MHz 250 khz 60 khz 16 khz 4 khz 1 khz 294 K 0.0-20 0 20 Gate bias (V) 0.0-20 0 20 Gate bias (V) #1-P12_No_Ovh D it (ev -1 cm -2 ) 3.0x10 13 2.5x10 13 2.0x10 13 1.5x10 13 1.0x10 13 5.0x10 12 NIT ox injection at 35K with: 30V 2 V Dit Ci n, 3 Ci n, 4 Ci n, 5 Ci n, 6 1.5 10 9 1 10 9 5 10 10 T=120 K 1 khz 10 khz 100 khz 1 MHz Ci n, 3 Ci n, 4 Ci n, 5 Ci n, 6 2 10 9 1 10 9 T=294 K 1 khz 10 khz 100 khz 1 MHz 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 E c -E t (ev) 0 0.2 0 0.2 U n 0 0.2 0 0.2 U n 10
Broadband Dielectric Spectrometer Unit contains 2 equipments: 1) Alpha-A High Performance Frequency Analyzer with an internal two channel frequency response analyzer and several test interfaces for impedance measurement. temperature controlled between -160...400 0 C Ranges: Frequency 3*10-6 Hz...20 MHz Impedance 0.01...10 14 Ohm Capacitance 1fF...1F Loss factor 10-5...10 4 AC voltage 10-4...3 V DC Bias -40...+40 V Accuracy: relative impedance or capacity, absolute loss factor < 3*10-5 absolute phase angle <2*10-3 degree Resolution: loss factor, impedance, capacity <10-5, phase angle < 0.6*10-3 degree 2) High Frequency Analyzer Agilent E 4991A The equipment uses a coaxial line reflection technique and can measure impedance from 0.1 ohm to 5*10 4 ohm with a resolution in loss factor < 2*10-3 degree The frequency range is 1 MHz to 3 GHz. Temperature controlled between -160...400 0 C 11