Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever halfwave, silicon gatecontrolled devices are needed. Features Blocking Voltage of 600 thru 800 Volts OnState Current Rating of 8 Amperes RMS at 80 C High Surge Current Capability 80 Amperes Rugged, Economical TO0AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design High Immunity to dv/dt 00 V/ sec Minimum at 5 C PbFree Packages are Available* MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note ) (T J = 0 to 5 C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8M MCR8N On-State RMS Current (80 Conduction Angles; T C = 80 C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, T C = 5 C) V DRM, V RRM 600 800 V I T(RMS) 8.0 A I TSM 80 A Circuit Fusing Consideration (t = 8.33 ms) I t 6.5 A sec Forward Peak Gate Power (Pulse Width.0 s, T C = 80 C) Forward Average Gate Power (t = 8.3 ms, T C = 80 C) P GM 5.0 W P G(AV) 0.5 W 3 SCRs 8 AMPERES RMS 600 thru 800 VOLTS A A Y WW G AKA TO0AB CASE A09 STYLE 3 G K = Assembly Location = Year = Work Week = PbFree Package = Diode Polarity MARKING DIAGRAM AY WW MCR8NG AKA Forward Peak Gate Current (Pulse Width.0 s, T C = 80 C) I GM.0 A Operating Range T J 0 to 5 C Storage Temperature Range T stg 0 to 50 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 3 PIN ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION Device Package Shipping MCR8N TO0AB 50 Units / Rail MCR8NG TO0AB 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 005 December, 005 Rev. 5 Publication Order Number: MCR8/D
THERMAL CHARACTERISTICS Thermal Resistance Characteristic Symbol Value Unit JunctiontoCase JunctiontoAmbient R JC. R JA 6.5 Maximum Lead Temperature for Soldering Purposes /8 from Case for 0 Seconds T L 60 C C/W ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V D = Rated V DRM and V RRM ; Gate Open) T J = 5 C T J = 5 C ON CHARACTERISTICS Peak Forward OnState Voltage (Note ) (I TM = 6 A) Gate Trigger Current (Continuous dc) (V D = V; R L = 00 ) Holding Current (V D = V, Gate Open, Initiating Current = 00 ma) I DRM, I RRM 0.0.0 ma V TM.8 V I GT.0 7.0 5 ma I H.0 7 30 ma Latch Current (V D = V, I G = 5 ma) Gate Trigger Voltage (Continuous dc) (V D = V; 00 ) T J = 5 C Gate NonTrigger Voltage (V D = V; R L = 00 ) T J = 5 C DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage (V D = Rated V DRM, Exponential Waveform, Gate Open, T J = 5 C) Critical Rate of Rise of OnState Current IPK = 50 A, Pw = 0 sec, dig/dt = A/ sec, Igt = 50 ma. Indicates Pulse Test: Pulse Width.0 ms, Duty Cycle %. I L 6.0 0 0 ma V GT 0.5 0.65.0 V V GD 0. V dv/dt 00 50 V/ s di/dt 50 A/ s
Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode T C, CASE TEMPERATURE ( C) 5 0 5 0 05 00 95 90 0 8 dc 6 30 60 90 80 0 3 5 6 7 8 0 I T(RMS), RMS ONSTATE CURRENT (AMPS) (AV), AVERAGE POWER DISSIPATION (WATTS) P 0 8 6 0 80 90 dc 60 30 3 5 6 7 8 I T(AV), AVERAGE ONSTATE CURRENT (AMPS) Figure. Typical RMS Current Derating Figure. OnState Power Dissipation, INSTANTANEOUS ONSTATE CURRENT (AMPS) I T 00 MAXIMUM @ T J = 5 C MAXIMUM @ T J = 5 C 0 0. 0.5 0.0.5.0.5 3.0 0 5 0 5 0 35 50 65 80 95 0 5 V T, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS) GATE TRIGGER CURRENT (ma) 0 8 6 0 8 6 Figure 3. Typical OnState Characteristics Figure. Typical Gate Trigger Current versus 3
IH, HOLDING CURRENT (ma) 00 0 V GT, GATE TRIGGER VOLTAGE (VOLTS) 0. 0 5 0 5 0 35 50 65 80 95 0 5 0 5 0 5 0 35 50 65 80 95 0 5.0 0.9 0.8 0.7 0.6 0.5 0. 0.3 Figure 5. Typical Holding Current versus Figure 6. Typical Gate Trigger Voltage versus 00 I L, LATCHING CURRENT (ma) 0 0 5 0 5 0 35 50 65 80 95 0 5 Figure 7. Typical Latching Current versus
PACKAGE DIMENSIONS TO0AB CASE A09 ISSUE AA H Q Z L V G B 3 N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.570 0.60.8 5.75 B 0.380 0.05 9.66 0.8 C 0.60 0.90.07.8 D 0.05 0.035 0.6 0.88 F 0. 0.7 3.6 3.73 G 0.095 0.05..66 H 0.0 0.55.80 3.93 J 0.08 0.05 0.6 0.6 K 0.500 0.56.70.7 L 0.05 0.060.5.5 N 0.90 0.0.83 5.33 Q 0.00 0.0.5 3.0 R 0.080 0.0.0.79 S 0.05 0.055.5.39 T 0.35 0.55 5.97 6.7 U 0.000 0.050 0.00.7 V 0.05.5 Z 0.080.0 STYLE 3: PIN. CATHODE. ANODE 3. GATE. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Phoenix, Arizona 85083 USA Phone: 8089770 or 80033860 Toll Free USA/Canada Fax: 80897709 or 80033867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 80089855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 53005 Phone: 8357733850 5 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MCR8/D
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