Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz High Gain-Bandwidth Product: 9. GHz Typical f T Description Agilent s AT-1 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 1 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 5 Ω at 1 GHz, makes this device easy to use as a low noise amplifier. The AT-1 bipolar transistor is fabricated using Agilent s 1 GHz ft Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. Chip Outline
2 AT-1 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V 2 V CEO Collector-Emitter Voltage V I C Collector Current ma 6 P T Power Dissipation [2,3] mw 5 T j Junction Temperature C 2 T STG Storage Temperature C -65 to 2 Part Number Ordering Information Part Number Devices Per Tray AT-1-GP 1 Note: For more information, see Tape and Reel Packaging for Semiconductor Devices. Thermal Resistance [2,] : θ jc = 95 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T MOUNTING SURFACE = 25 C. 3. Derate at 1.5 mw/ C for T MOUNTING SURFACE > 153 C.. The small spot size of this technique results in a higher, though more accurate determination of θ jc than do alternate methods. See MEASUREMENTS section Thermal Resistance for more information. Electrical Specifications, T A = 25 C Symbol Parameters and Test Conditions [1] Units Min. Typ. Max. S 21E 2 Insertion Power Gain; V CE = V, I C = 25 ma f = db. f =. GHz 6.5 P 1 db Power Output @ 1 db Gain Compression f = dbm 19. V CE = V, I C = 25 ma f=. GHz 1.5 G 1 db 1 db Compressed Gain; V CE = V, I C = 25 ma f = db 15. f =. GHz 1.5 NF O Optimum Noise Figure: V CE = V, I C = 1 ma f = 1. GHz db 1.3 f = 1.6 f =. GHz 3. G A Gain @ NF O ; V CE = V, I C = 1 ma f = 1. GHz db 1.5 f = 1.5 f =. GHz 1.5 f T Gain Bandwidth Product: V CE = V, I C = 25 ma GHz 9. h FE Forward Current Transfer Ratio; V CE = V, I C = 1 ma 3 15 3 I CBO Collector Cutoff Current; V CB = V µa.2 I EBO Emitter Cutoff Current; V EB = 1 V µa 1. C CB Collector Base Capacitance [2] : V CB = V, f = 1 MHz pf.17 Notes: 1. RF performance is determined by packaging and testing 1 devices per wafer. 2. For this test, the emitter is grounded.
3 AT-1 Typical Performance, T A = 25 C GAIN (db) 2 21 1 15 G A 9 6 6 NF 5 Ω 3 NF O 2.5 1. 2. 3.. 5. FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency. V CE = V, I C = 1 ma. NF (db) GAIN (db) 15 1 13 G A 1 V 6 V V V 6 V 3 1 V 2 NF O 1 1 2 3 Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f =. NF O (db) GAIN (db) 1 1 G A NF O. GHz. GHz 6 2 1 2 3 Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. V CE = V. NF O (db) G1 db (db) P1 db (dbm) 2 2 P 1dB G 1dB 1 2 3. GHz. GHz Figure. Output Power and 1 db Compressed Gain vs. Collector Current. V CE = V. GA (db) 35 3 25 2 15 1 5 MSG S 21E 2.1.3.5 1. 3. 6. FREQUENCY (GHz) MAG Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = V, I C = 25 ma. S21E 2 GAIN (db) 2 11 1 2 3 1. GHz. GHz Figure 6. Insertion Power Gain vs. Collector Current and Frequency. V CE = V.
AT-1 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =25 C, V CE = V, I C = 1 ma Freq. S 11 S 21 S S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang..1.73-39 2.3 25. 159-39.2.11 75.9 -.5.6-1 22.2.91 113-3.2.31.61-2 1..57-156 17.2 7.27 9-2.. 51.5-25 1.5.56-172 13.7. -26.. 59.7-25 2..57 176 11. 3.71 77-2.9.57 66.6-2 2.5.57 17 9.5 2.97 71-23.6.66 69.6-26 3..6. 2.52 6-22.3.77 72.5-2 3.5.6 157 6. 2.1 61-2.9.9 77.7-29..61 152 5.5 1.9 55-2.1.99 79.7-3.5.63 17.7 1.72 51-1.7.1 1.7-36 5..63 1 3.7 1.53 6-17..9. - 5.5.65 139 3.1 1.2 2-17..11 2.9-6. 66 136 2.1 1.2 3 -.1.156 3.5-7 AT-1 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =25 C, V CE = V, I C = 25 ma Freq. S 11 S 21 S S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang..1.56-6 31. 39.7 152 -.9.9 69.7-1.5.5-15 23.5 15. 1-32..23 56.9-2 1..5-17 1.1.3 9-29.6.33 65.2-23 1.5.55 179 1.5 5.3 2-26.9.5 72.1-22 2..56 17.1. 76-2.7.5 75.1-23 2.5.56 5 1.2 3.2 72-23.1.7 7. -23 3..5 159. 2.75 65-21.6.3 79. -25 3.5.59 15 7.5 2.37 62-2..96 2.1-26..6 19 6.3 2.6 57-19.3.1 3.2-2.5.61 15 5. 1.7 53-1.1..2-33 5..62.5 1.67 9-17.3.136 3.3-36 5.5.6 137 3. 1.5 -.5.15 5.2-6..65 13 2.9 1. 1-15.7.5. -5 A model for this device is available in the DEVICE MODELS section. AT-1 Noise Parameters: VCE = V, IC = 1 ma Freq. NF Γ O opt GHz db Mag Ang R N /5.1 1.2. 3.17.5 1.2.1 15.17 1. 1.3.6 27. 2. 1.6.2 3.. 3..52-153.1
5 AT-1 Chip Dimensions 3 µm 1.1 mil DIA Base Pad 9 µm 3.5 mil 25 µm 9. mil Emitter Pad 25 µm 9. mil Note: Die thickness is 5 to 6 mil.
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