Agilent AT-135 Up to GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Agilent s AT-135 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-135 is housed in a cost effective surface mount 1 mil micro-x package. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 1 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 5Ω at 1 GHz, makes this device easy to use as a low noise amplifier. 35 micro-x Package The AT-135 bipolar transistor is fabricated using Agilent s 1 GHz ft Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features Low Noise Figure: 1.7 db Typical at 3. db Typical at. GHz High Associated Gain: 1. db Typical at 1. db Typical at. GHz High Gain-Bandwidth Product:. GHz Typical f T Cost Effective Ceramic Microstrip Package Lead-free Option Available
AT-135 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V I C Collector Current ma P T Power Dissipation [,3] mw 5 T j Junction Temperature C T STG Storage Temperature [] C -5 to Notes: 1. Permanent damage may occur if any of these limits are exceeded.. T CASE = 5 C. 3. Derate at 5 mw/ C for T C > 1 C.. Storage above + C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θ jc than do alternate methods. See MEASURE- MENTS section Thermal Resistance for more information. Thermal Resistance [,5] : θ jc = C/W Electrical Specifications, T A = 5 C Symbol Parameters and Test Conditions Units Min. Typ. Max. S 1E Insertion Power Gain; V CE = V, I C = 5 ma f = db 11.5 f =. GHz. P 1 db Power Output @ 1 db Gain Compression f = dbm 19. V CE = V, I C = 5 ma f =. GHz 1.5 G 1 db 1 db Compressed Gain; V CE = V, I C = 5 ma f = db 1. f =. GHz 9.5 Optimum Noise Figure: V CE = V, I C = 1 ma f = 1. GHz db 1.3 f = 1.7. f =. GHz 3. Gain @ ; V CE = V, I C = 1 ma f = 1. GHz db 1.5 f = 13. 1. f =. GHz 1. f T Gain Bandwidth Product: V CE = V, I C = 5 ma GHz. h FE Forward Current Transfer Ratio; V CE = V, I C = 1 ma 3 7 I CBO Collector Cutoff Current; V CB = V µa. I EBO Emitter Cutoff Current; V EB = 1 V µa 1. C CB Collector Base Capacitance [1] : V CB = V, f = 1 MHz pf. Note: 1. For this test, the emitter is grounded.
3 AT-135 Typical Performance, T A = 5 C 1 1 9 NF 5 Ω 3.5 1.. 3.. 5. FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency. V CE = V, I C = 1 ma. NF (db) G1 db (db) P1 db (dbm) P 1dB G 1dB 1 3. GHz. GHz Figure. Output Power and 1 db Compressed Gain vs. Collector Current and Frequency. V CE = V. 1 13 1 3 1 V V V V V 1 V Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f =. 3 1 (db) 1 1. GHz. GHz (db) 35 3 5 1 5 MSG S 1E MAG S1E 1. GHz. GHz 1 3 Figure. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. V CE = V..1.3.5 1. 3.. FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = V, I C = 5 ma. 1 3 Figure. Insertion Power Gain vs. Collector Current and Frequency. V CE = V.
AT-135 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =5 C, V CE = V, I C = 1 ma Freq. S 11 S 1 S S GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang..1. -3..99 7-39..11.93 -.5.5-11 1..3 1-9..33 5.1-1.. -..73 5 -..9 5.51-3 1.5.3-17 13.3.3 71 -..3 59. -3..39 11. 3.5-1.9. 5. -37.5.1 9.3.91 53 -..95 1. - 3.. 7.9.7 3-1..1 1.3-3.5. 137.7. 33-17.5.133 5.3-5.. 7 5. 1.91 3 -..3 53.5 -.5.7 1.7 1.7 13 -..17 5. -75 5..9 1. 1.5 3-13.9.1 7. - 5.5.5 91 3.3 1.5-7 -13...7-9..59 1.5 1.3-17 -.1.7 3.3-11 AT-135 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =5 C, V CE = V, I C = 5 ma Freq. S 11 S 1 S S GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang..1.3-5 31. 39. -..1 3. -1.5.39-137.9 13.97 99-31..7.5-1..3-171 17. 7. -7.1. 7.5-1.5.3 171 13.9.9-3.5.7.3-3..3 11.5 3.7 5-1..3 3.1-3.5. 19 9. 3. 5-19.. 3.39-3 3..3 1.3.1 3-1.3..3-7 3.5.5 13 7.. 33 -..1 59.39-57...1. 3 -..5 55. -7.5. 1 5. 1. 1-1.. 5. -75 5..7 11. 1. -13.7.7 5.3-1 5.5.51 9 3.7 1.5-5 -..33 39. -9..5 79 3. 1.1 - -11..57 33.37-11 A model for this device is available in the DEVICE MODELS section. AT-135 Noise Parameters: VCE = V, IC = 1 ma Freq. NF Γ O opt GHz db Mag Ang R N /5.1 1.. 3.17.5 1..1 1.17 1. 1.3.5.17. 1.7.3 -.. 3..5-11.35
Ordering Information Part Numbers No. of Devices AT-135 1 AT-135G 1 Note: Order part number with a G suffix if lead-free option is desired. 35 micro-x Package Dimensions.5. EMITTER.3.11 DIA. BASE 1 COLLECTOR 1 3 EMITTER..5.57 ±.1 1.5 ±.5.1.5 Notes: (unless otherwise specified) 1. Dimensions are in. Tolerances mm in.xxx = ±.5 mm.xx = ±.13..5.55 ±.3 11.5 ±.75. ±.. ±.5 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 () 35-3 or (9) 7-73 Europe: +9 () 1 9 China: 1 5 17 Hong Kong: (5) 75 39 India, Australia, New Zealand: (5) 755 1939 Japan: (+1 3) 3335-(Domestic/International), or -1-(Domestic Only) Korea: (5) 755 199 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (5) 755 Taiwan: (5) 755 13 Data subject to change. Copyright 5 Agilent Technologies, Inc. Obsoletes 59-979EN March, 5 599-7EN